IRGSL10B60KDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGSL10B60KDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总15页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
• Square RBSOA.
G
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
E
VCE(on) typ. = 1.8V
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS10B60KD IRGSL10B60KD
TO-262
TO-220AB
IRGB10B60KD
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
22
12
44
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
44
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
22
10
44
VGE
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
156
W
PD @ TC = 100°C Maximum Power Dissipation
62
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.8
Units
°C/W
g
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
3.4
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
62
–––
40
1.44
–––
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1
11/24/04
IRG/B/S/SL10B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Collector-to-Emitter Breakdown Voltage 600 ––– –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
VGE(th)
V
VGE = 0V, IC = 500µA
5, 6,7
9,10,11
9,10,11
12
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
––– 2.20 2.50
3.5 4.5 5.5
IC = 10A, VGE = 15V
IC = 10A, VGE = 15V
VCE = VGE, IC = 250µA
V
V
TJ = 150°C
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 7.0 –––
––– 3.0 150
––– 300 700
––– 1.30 1.45
––– 1.30 1.45
S
VCE = 50V, IC = 10A, PW=80µs
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
IC = 10A
8
V
IC = 10A
TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 38 –––
IC = 10A
CC = 400V
VGE = 15V
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
––– 4.3 –––
––– 16.3 –––
––– 140 247
––– 250 360
––– 390 607
nC
µJ
V
CT1
CT4
IC = 10A, VCC = 400V
VGE = 15V,RG = 47Ω, L = 200µH
Ls = 150nH
TJ = 25°C
––– 30
––– 20
39
29
IC = 10A, VCC = 400V
VGE = 15V, RG = 47Ω, L = 200µH
CT4
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 230 262
––– 23 32
ns
µJ
Ls = 150nH, TJ = 25°C
CT4
13,15
WF1WF2
14, 16
CT4
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 230 340
––– 350 464
––– 580 804
IC = 10A, VCC = 400V
VGE = 15V,RG = 47Ω, L = 200µH
Ls = 150nH
TJ = 150°C
––– 30
––– 20
39
28
IC = 10A, VCC = 400V
VGE = 15V, RG = 47Ω, L = 200µH
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 250 274
––– 26 34
ns
Ls = 150nH, TJ = 150°C
WF1
WF2
Cies
Coes
Cres
Input Capacitance
––– 620 –––
––– 62 –––
––– 22 –––
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
f = 1.0MHz
4
TJ = 150°C, IC = 44A, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
FULL SQUARE
10 ––– –––
CT2
CT3
R = 47Ω
VCC = 500V, VGE = +15V to 0V,
G
µs
TJ = 150°C, Vp =600V,RG = 47Ω
VCC = 360V, VGE = +15V to 0V
TJ = 150°C
WF4
17,18,19
Erec
trr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
––– 245 330
––– 90 105
µJ
ns
A
20, 21
VCC = 400V, IF = 10A, L = 200µH
VGE = 15V,RG = 47Ω, Ls = 150nH
CT4,WF3
Irr
Diode Peak Reverse Recovery Current ––– 19
22
Note to are on page 15
2
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IRG/B/S/SL10B60KDPbF
25
20
15
10
5
180
160
140
120
100
80
60
40
20
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10 µs
20 µs
10
100 µs
1ms
1
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
1000
V
CE
V
(V)
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRG/B/S/SL10B60KDPbF
40
40
35
30
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
40
40
35
30
25
20
15
10
5
V
= 18V
-40°C
35
GE
25°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
150°C
30
25
20
15
10
5
0
0
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
0
1
2
3
4
5
6
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRG/B/S/SL10B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 5.0A
= 10A
= 15A
I
I
I
= 5.0A
= 10A
= 15A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
T
T
= 25°C
J
J
= 150°C
I
I
I
= 5.0A
= 10A
= 15A
CE
CE
CE
6
T
= 150°C
J
4
T
= 25°C
15
2
J
0
5
10
15
20
0
5
10
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRG/B/S/SL10B60KDPbF
1000
100
10
800
700
600
td
OFF
500
400
300
200
100
0
E
OFF
E
td
ON
ON
t
F
t
R
0
5
10
15
20
25
0
5
10
15
20
25
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
500
450
400
350
300
250
200
150
100
50
1000
100
10
E
OFF
td
OFF
E
ON
td
ON
t
R
t
F
0
0
50
100
150
0
50
100
150
R
( )
Ω
R
( )
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
6
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IRG/B/S/SL10B60KDPbF
25
25
20
15
10
5
R
10
Ω
G =
R
22
Ω
20
15
10
5
G =
R
47
Ω
G =
R
100
Ω
G =
0
0
0
50
100
150
0
5
10
15
20
25
R
(
Ω)
I
(A)
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 10A
TJ = 150°C
25
20
15
10
5
1200
1100
1000
900
10
Ω
22
Ω
47
Ω
100
Ω
800
20A
700
10A
600
5.0A
500
400
0
0
500
1000
1500
0
500
1000
1500
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 150°C
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7
IRG/B/S/SL10B60KDPbF
450
400
350
300
250
200
150
100
50
10
22
Ω
Ω
47
Ω
100
Ω
0
0
5
10
15
20
25
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
1000
100
10
Cies
14
12
10
300V
400V
8
Coes
6
4
Cres
2
0
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 10A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRG/B/S/SL10B60KDPbF
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
Cτ
0.285
0.241
0.288
0.000134
0.01
0.02
τ
τ
1τ1
τ
2 τ2
3τ3
0.000565
0.0083
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.846
1.830
1.143
0.000149
0.01
0.02
0.1
τ
1τ1
τ
2 τ2
3τ3
0.001575
0.027005
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRG/B/S/SL10B60KDPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRG/B/S/SL10B60KDPbF
600
500
400
300
200
100
0
30
25
20
15
10
5
600
500
400
300
200
100
0
12
10
8
90% ICE
TEST CURRENT
90% test current
6
tf
4
10% test current
5% VCE
5% VCE
5% ICE
tr
2
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-2
15.90
16.00
16.10
16.20
-0.20 0.00 0.20 0.40 0.60 0.80
time(µs)
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
15
400
100
50
0
VCE
QRR
350
300
250
200
150
100
50
10
5
tRR
-100
-200
-300
-400
-500
-600
ICE
0
-5
10%
Peak
IRR
Peak
IRR
-10
-15
-20
0
-5.00
0.00
5.00
10.00 15.00
-0.15
-0.05
0.05
0.15
0.25
time (µS)
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRG/B/S/SL10B60KDPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LO GO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS S E MB L Y
LOT CODE
LINE C
12
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IRG/B/S/SL10B60KDPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
RECTIFIER
LOGO
F530S
DAT E CODE
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WE EK 02
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WEEK 02
A = ASSEMBLYSITE CODE
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13
IRG/B/S/SL10B60KDPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASS EMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
WE E K 19
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB L Y
LOT CODE
WE E K 19
A = AS S E MB L Y S IT E CODE
14
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IRG/B/S/SL10B60KDPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 47Ω.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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15
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