IRGSL4B60KD1 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGSL4B60KD1 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总15页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94607A
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
• 10µs Short Circuit Capability.
G
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-262
TO-220
IRGS4B60KD1 IRGSL4B60KD1
IRGB4B60KD1
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
11
7.6
A
IC @ TC = 100°C
ICM
22
22
ILM
IF @ TC = 25°C
11
6.7
IF @ TC = 100°C
IFM
22
±20
V
VGE
PD @ TC = 25°C Maximum Power Dissipation
63
W
Maximum Power Dissipation
Operating Junction and
31
PD @ TC = 100°C
TJ
-55 to +175
Storage Temperature Range
Storage Temperature Range, for 10 sec.
°C
TSTG
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.4
Units
Junction-to-Case- IGBT
°C/W
Rθ
JC
RθJC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient
–––
6.1
0.50
–––
–––
62
Rθ
CS
RθJA
–––
40
Rθ
Junction-to-Ambient (PCB Mount, steady state)
Weight
JA
Wt
1.44
–––
g
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1
05/28/03
IRGB/S/SL4B60KD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
0.28
2.1
2.5
2.6
4.5
-8.1
1.7
1.0
136
—
V
∆
∆
V(BR)CES/ TJ
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 4.0A, VGE = 15V, TJ = 25°C
IC = 4.0A, VGE = 15V, TJ = 150°C
IC = 4.0A, VGE = 15V, TJ = 175°C
Temperature Coeff. of Breakdown Voltage
—
V/°C
2.5
2.8
2.9
5.5
—
5,6,7
VCE(on)
VGE(th)
Collector-to-Emitter Voltage
V
9,10,11
V
V
CE = VGE, IC = 250µA
Gate Threshold Voltage
V
mV/°C
S
9,10,11
12
∆
∆
VGE(th)/ TJ
CE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 4.0A, PW = 80µs
gfe
—
V
V
V
GE = 0V, VCE = 600V
150
600
ICES
VFM
GE = 0V, VCE = 600V, TJ = 150°C
GE = 0V, VCE = 600V, TJ = 175°C
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
722 2400
IF = 4.0A
1.4
1.3
1.2
—
2.0
1.8
1.7
8
IF = 4.0A, TJ = 150°C
IF = 4.0A, TJ = 175°C
IGES
VGE = ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
23
Qg
IC = 4.0A
CC = 400V
VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
1.7
6.5
73
—
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
V
—
nC
µJ
ns
CT1
—
IC = 4.0A, VCC = 400V
VGE = 15V, RG = 100Ω, L = 2.5mH
TJ = 25°C
80
CT4
CT4
47
53
120
22
130
28
IC = 4.0A, VCC = 400V
Ω
GE = 15V, RG = 100 , L = 2.5mH
V
Rise time
18
23
td(off)
tf
TJ = 25°C
Turn-Off delay time
100
66
110
80
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 4.0A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
130
83
150
140
280
27
CT4
13,15
WF1,WF2
14,16
CT4
Ω
V
GE = 15V, RG = 100 , L = 2.5mH
µJ
ns
TJ = 150°C
220
22
IC = 4.0A, VCC = 400V
VGE = 15V, RG = 100Ω, L = 2.5mH
TJ = 150°C
Rise time
18
22
td(off)
tf
Turn-Off delay time
120
79
130
89
WF1
Fall time
WF2
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
190
25
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
22
6.2
—
f = 1.0MHz
TJ = 150°C, IC = 22A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 100
TJ = 150°C, Vp = 600V, RG = 100Ω
VCC=360V,VGE = +15V to 0V
TJ = 150°C
FULL SQUARE
4
Ω
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
CT3
WF4
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
81
93
100
—
µJ
ns
A
17,18,19
20,21
CT4,WF3
VCC = 400V, IF = 4.0A, L = 2.5mH
VGE = 15V, RG = 100Ω
Irr
Peak Reverse Recovery Current
6.3
7.9
Note to
are on page 16
2
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IRGB/S/SL4B60KD1
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10
100µs
1
1ms
10ms
0.1
DC
0
0.01
10
100
(V)
1000
0
1
10
100
(V)
1000 10000
V
CE
V
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
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3
IRGB/S/SL4B60KD1
30
30
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
20
15
10
5
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
25
35
30
25
20
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
-40°C
25°C
150°C
15
10
5
0
0
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
F
V
(V)
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRGB/S/SL4B60KD1
20
18
16
14
12
10
8
20
18
16
14
12
I
I
I
= 2.0A
= 4.0A
= 8.0A
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
CE
CE
CE
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
30
25
20
15
10
5
T
= 25°C
J
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
T
= 150°C
J
6
4
2
0
0
0
5
10
15
20
5
10
15
20
V
, Gate-to-Source Voltage (V)
V
(V)
GS
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
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5
IRGB/S/SL4B60KD1
350
300
1000
100
10
td
t
E
OFF
ON
250
F
200
150
td
ON
E
t
OFF
R
100
50
0
1
0
2
4
6
8
10
1
2
3
4
5
I
6
7
8
9
10
I
(A)
(A)
C
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
350
300
250
200
150
100
50
1000
E
ON
td
OFF
100
t
F
E
OFF
td
ON
t
R
0
10
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
Ω
R
(
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
6
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IRGB/S/SL4B60KD1
7
6
5
4
3
2
10
9
8
7
6
5
4
3
2
1
R
100Ω
G =
R
R
200
Ω
G =
330
Ω
G =
R
470
Ω
G =
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
10
R
(
Ω)
I
(A)
G
F
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C
TJ = 150°C; IF = 4.0A
700
7
6
5
4
3
2
100Ω
8.0A
600
500
400
300
200
100
200Ω
330Ω
470
Ω
4.0A
2.0A
0
50 100 150 200 250 300 350 400
100
150
200
250
300
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
IF = 4.0A; TJ = 150°C
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IRGB/S/SL4B60KD1
150
125
100
75
100Ω
200Ω
330Ω
470
Ω
50
25
0
0
1
2
3
4
5
6
7
8
9
10
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
1000
100
10
16
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
1
0
0
20
40
60
(V)
80
100
0
2
4
6
8
10
12
14
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 4.0A; L = 3150µH
VGE= 0V; f = 1MHz
8
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IRGB/S/SL4B60KD1
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
0.0429
1.3417
1.0154
0.000001
0.000178
0.000627
Cτ
τ
1τ1
τ
0.1
2 τ2
3τ3
0.02
0.01
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τ
0.0904
1.6662
3.5994
0.7454
0.000003
0.000117
0.001610
0.048846
τ
J τJ
τ
0.05
Cτ
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
Ci= τi/Ri
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGB/S/SL4B60KD1
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGB/S/SL4B60KD1
700
600
500
400
300
200
100
0
14
12
10
8
700
600
500
400
300
200
100
0
14
12
10
8
tf
tr
Vce
Ice
Vce
90% Ice
5% Vce
5% Ice
90% Ice
10% Ice
5% Vce
6
6
4
4
Ice
2
2
0
0
Eon
Loss
Eoff Loss
-100
-2
-100
-2
0.4
0.6
0.8
1
1.2
0.35
0.45
0.55
0.65
Time (uS)
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
6
400
350
300
250
200
150
100
50
40
35
30
25
20
15
10
5
QRR
Vce
tRR
4
-100
-200
-300
-400
-500
-600
2
Ice
0
-2
-4
-6
-8
10% Peak
IRR
Peak
IRR
0
0
-50
-5
30
40
50
60
70
0.05
0.15
Time (uS)
0.25
0.35
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGB/S/SL4B60KD1
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1 - GATE
2 -COLLECTOR
1.15 (.045)
MIN
1
2
3
3 EMITTER
4 - COLLECTOR
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 7 = 1997
WE E K 19
AS S E MB L Y
LOT CODE
LINE C
12
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IRGB/S/SL4B60KD1
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEE K 02
AS S E MBL Y
LOT CODE
LINE L
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13
IRGB/S/SL4B60KD1
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW19, 1
997
IN THE ASSEMBLY LINE "C"
ER
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LY
LOT CODE
L
INE C
14
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IRGB/S/SL4B60KD1
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.22 (.601)
15.42 (.609)
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer
to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/03
www.irf.com
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