IRGSL4B60KD1TRL [INFINEON]

Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN;


型号：	IRGSL4B60KD1TRL
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN 晶体二极管双极型晶体管电动机控制栅超快软恢复二极管快速软恢复二极管
文件：	总15页 (文件大小：435K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95616

IRGB4B60KD1PbF

IRGS4B60KD1

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

I_C= 7.6A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 2.1V

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

• TO-220 is available in PbF as Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

IRGS4B60KD1

TO-262

IRGSL4B60KD1

TO-220

IRGB4B60KD1PbF

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

7.6

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 25°C

6.7

I_F@ T_C= 100°C

±20

I_FM

V_GE

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +175

T_J

Storage Temperature Range

Storage Temperature Range, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

2.4

Units

°C/W

Junction-to-Case- IGBT

R_θJC

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient

–––

6.1

R_θ

0.50

–––

R_θCS

R_θ

–––

Junction-to-Ambient (PCB Mount, steady state)

Weight

R_θJA

1.44

–––

www.irf.com

8/10/04

IRGB4B60KD1PbF, IRGS/SL4B60KD1

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.Fig.

V_(BR)CES

V_GE= 0V, I_C= 500µA

Collector-to-Emitter Breakdown Voltage

600

—

3.5

—

0.28

2.1

2.5

2.6

4.5

-8.1

1.7

1.0

136

—

∆

V_(BR)CES/ T_J

V_CE(on)

V_GE(th)

V_GE= 0V, I_C= 1mA (25°C-150°C)

I_C= 4.0A, V_GE= 15V, T_J= 25°C

I_C= 4.0A, V_GE= 15V, T_J= 150°C

I_C= 4.0A, V_GE= 15V, T_J= 175°C

Temperature Coeff. of Breakdown Voltage

—

V/°C

2.5

2.8

2.9

5.5

—

5,6,7

Collector-to-Emitter Voltage

9,10,11

_CE= V_GE, I_C= 250µA

Gate Threshold Voltage

mV/°C

9,10,11

∆

V_GE(th)/ T_J

_CE= V_GE, I_C= 1mA (25°C-150°C)

Threshold Voltage temp. coefficient

Forward Transconductance

V_CE= 50V, I_C= 4.0A, PW = 80µs

gfe

—

_GE= 0V, V_CE= 600V

150

600

I_CES

V_FM

_GE= 0V, V_CE= 600V, T_J= 150°C

_GE= 0V, V_CE= 600V, T_J= 175°C

Zero Gate Voltage Collector Current

Diode Forward Voltage Drop

µA

722 2400

I_F= 4.0A

1.4

1.3

1.2

—

2.0

1.8

1.7

I_F= 4.0A, T_J= 150°C

I_F= 4.0A, T_J= 175°C

I_GES

V_GE= ±20V

Gate-to-Emitter Leakage Current

±100 nA

Switching Characteristics @ T_J= 25°C (unless otherwise specified)

Ref.Fig.

Parameter

Total Gate Charge (turn-on)

Gate-to-Emitter Charge (turn-on)

Gate-to-Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On delay time

Min. Typ. Max. Units

Conditions

Q_g

I_C= 4.0A

_CC= 400V

V_GE= 15V

—

1.7

6.5

—

Q_ge

Q_gc

E_on

E_off

E_tot

t_d(on)

t_r

—

µJ

CT1

—

I_C= 4.0A, V_CC= 400V

V_GE= 15V, R_G= 100Ω, L = 2.5mH

T_J= 25°C

CT4

120

130

I_C= 4.0A, V_CC= 400V

Ω

_GE= 15V, R_G= 100 , L = 2.5mH

Rise time

t_d(off)

t_f

T_J= 25°C

Turn-Off delay time

100

110

Fall time

E_on

E_off

E_tot

t_d(on)

t_r

I_C= 4.0A, V_CC= 400V

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On delay time

130

150

140

280

CT4

13,15

WF1,WF2

14,16

CT4

Ω

_GE= 15V, R_G= 100 , L = 2.5mH

µJ

T_J= 150°C

220

I_C= 4.0A, V_CC= 400V

V_GE= 15V, R_G= 100Ω, L = 2.5mH

T_J= 150°C

Rise time

t_d(off)

t_f

Turn-Off delay time

120

130

WF1

Fall time

WF2

C_ies

C_oes

C_res

RBSOA

V_GE= 0V

Input Capacitance

190

—

V_CC= 30V

Output Capacitance

Reverse Transfer Capacitance

Reverse Bias Safe Operating Area

—

µs

6.2

—

f = 1.0MHz

T_J= 150°C, I_C= 22A, Vp = 600V

V_CC=500V,V_GE= +15V to 0V,R_G= 100

T_J= 150°C, Vp = 600V, R_G= 100Ω

V_CC=360V,V_GE= +15V to 0V

T_J= 150°C

FULL SQUARE

Ω

CT2

SCSOA

Short Circuit Safe Operating Area

—

CT3

WF4

E_rec

t_rr

Reverse Recovery Energy of the Diode

Diode Reverse Recovery Time

—

100

—

µJ

17,18,19

20,21

CT4,WF3

V_CC= 400V, I_F= 4.0A, L = 2.5mH

V_GE= 15V, R_G= 100Ω

I_rr

Peak Reverse Recovery Current

6.3

7.9

Note to

are on page 16

www.irf.com

IRGB4B60KD1PbF, IRGS/SL4B60KD1

20 40 60 80 100 120 140 160 180

(°C)

20 40 60 80 100 120 140 160 180

(°C)

Fig. 1 - Maximum DC Collector Current vs.

Fig. 2 - Power Dissipation vs. Case

Case Temperature

Temperature

100

100µs

1ms

10ms

0.1

0.01

100

(V)

1000

100

(V)

1000 10000

Fig. 4 - Reverse Bias SOA

Fig. 3 - Forward SOA

T_C= 25°C; T_J≤ 150°C

T_J= 150°C; V_GE=15V

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

= 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

(V)

Fig. 5 - Typ. IGBT Output Characteristics

Fig. 6 - Typ. IGBT Output Characteristics

T_J= -40°C; tp = 80µs

T_J= 25°C; tp = 80µs

= 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

-40°C

25°C

150°C

0.0

0.5

1.0

1.5

(V)

2.0

2.5

3.0

(V)

Fig. 8 - Typ. Diode Forward Characteristics

Fig. 7 - Typ. IGBT Output Characteristics

tp = 80µs

T_J= 150°C; tp = 80µs

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

= 2.0A

= 4.0A

= 8.0A

= 2.0A

= 4.0A

= 8.0A

(V)

Fig. 9 - Typical V_CEvs. V_GE

Fig. 10 - Typical V_CEvs. V_GE

T_J= -40°C

T_J= 25°C

= 25°C

= 2.0A

= 4.0A

= 8.0A

= 150°C

, Gate-to-Source Voltage (V)

(V)

Fig. 11 - Typical V_CEvs. V_GE

Fig. 12 - Typ. Transfer Characteristics

T_J= 150°C

V_CE= 360V; tp = 10µs

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

350

300

250

200

150

100

1000

100

OFF

(A)

Fig. 13 - Typ. Energy Loss vs. I_C

T_J= 150°C; L=2.5mH; V_CE= 400V,

R_G= 100Ω; V_GE= 15V

Fig. 14 - Typ. Switching Time vs. I_C

T_J= 150°C; L=2.5mH; V_CE= 400V

R_G= 100Ω; V_GE= 15V

350

300

250

200

150

100

1000

OFF

100

OFF

100

200

300

)

400

500

100

200

300

)

400

500

(

Ω

(

Ω

Fig. 15 - Typ. Energy Loss vs. R_G

T_J= 150°C; L=2.5mH; V_CE= 400V

I_CE= 4.0A; V_GE= 15V

Fig. 16 - Typ. Switching Time vs. R_G

T_J= 150°C; L=2.5mH; V_CE= 400V

I_CE= 4.0A; V_GE= 15V

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

100Ω

G =

200

Ω

G =

330

Ω

G =

470

Ω

G =

100

200

300

400

500

(

Ω)

(A)

Fig. 17 - Typical Diode I_RRvs. I_F

Fig. 18 - Typical Diode I_RRvs. R_G

T_J= 150°C

T_J= 150°C; I_F= 4.0A

700

100Ω

8.0A

600

500

400

300

200

100

200Ω

330Ω

470

Ω

4.0A

2.0A

50 100 150 200 250 300 350 400

100

150

200

250

300

di /dt (A/µs)

Fig. 19- Typical Diode I_RRvs. di_F/dt

V_CC= 400V; V_GE= 15V;

Fig. 20 - Typical Diode Q_RR

V_CC= 400V; V_GE= 15V;T_J= 150°C

I_F= 4.0A; T_J= 150°C

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

150

125

100Ω

100

200Ω

330Ω

470

Ω

(A)

Fig. 21 - Typical Diode E_RRvs. I_F

T_J= 150°C

1000

100

Cies

300V

400V

Coes

Cres

(V)

100

, Total Gate Charge (nC)

Fig. 23 - Typical Gate Charge vs. V_GE

Fig. 22- Typ. Capacitance vs. V_CE

I_CE= 4.0A; L = 3150µH

V_GE= 0V; f = 1MHz

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

Ri (°C/W) τi (sec)

^Jτ_J

0.0429

1.3417

1.0154

0.000001

0.000178

0.000627

^Cτ

¹τ₁

0.1

²τ₂

³τ₃

0.02

0.01

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

D = 0.50

0.20

0.10

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.0904

1.6662

3.5994

0.7454

0.000003

0.000117

0.001610

0.048846

^Jτ_J

0.05

^Cτ

¹τ₁

²τ₂

³τ₃

⁴τ₄

0.02

0.01

Ci= τi/Ri

0.1

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

VCC

80 V

DUT

480V

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.1 - Gate Charge Circuit (turn-off)

diode clamp /

DUT

Driver

- 5V

360V

DUT /

DRIVER

VCC

DUT

Fig.C.T.3 - S.C.SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

R =

ICM

DUT

VCC

Fig.C.T.5 - Resistive Load Circuit

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

700

600

500

400

300

200

100

700

600

500

400

300

200

100

Vce

Ice

Vce

90% Ice

5% Vce

5% Ice

90% Ice

10% Ice

5% Vce

Ice

Eon

Loss

Eoff Loss

-100

-2

-100

-2

0.4

0.6

0.8

1.2

0.35

0.45

0.55

0.65

Time (uS)

Fig. WF1- Typ. Turn-off Loss Waveform

@ T_J= 150°C using Fig. CT.4

Fig. WF2- Typ. Turn-on Loss Waveform

@ T_J= 150°C using Fig. CT.4

100

400

350

300

250

200

150

100

Q_RR

Vce

t_RR

-100

-200

-300

-400

-500

-600

Ice

-2

-4

-6

-8

10% Peak

I_RR

Peak

I_RR

-50

-5

0.05

0.15

Time (uS)

0.25

0.35

Time (uS)

Fig. WF4- Typ. S.C Waveform

@ T_C= 150°C using Fig. CT.3

Fig. WF3- Typ. Diode Recovery Waveform

@ T_J= 150°C using Fig. CT.4

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

1 - GATE

2 - DRAIN

3 - SOURCE

2- DRAIN

3- SOURCE

4 - DRAIN

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

AS S EMB LED ON WW 19, 1997

IN THE AS S EMBLY LINE "C"

INTE RNAT IONAL

RECT IFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DAT E CODE

YEAR 7 = 1997

WEEK 19

AS S EMBLY

LOT CODE

LINE C

www.irf.com

IRGB4B60KD1PbF, IRGS/SL4B60KD1

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

P AR T N U MB E R

L OT CODE 8024

IN T E R N AT IONAL

R E CT IF IE R

L OGO

AS S E MB L E D ON WW 02, 2000

IN T H E AS S E MB L Y L INE "L "

F 530S

DAT E CODE

YE AR 0 = 2000

WE E K 02

N ote: "P " in as s embly line

pos ition indicates "L ead-F ree"

AS S E MB L Y

L OT CODE

L INE

P AR T N U MB E R

IN T E R N AT ION AL

R E CT IF IE R

L OGO

F 530S

D AT E COD E

D E S IGN AT E S L E AD -F R E E

P R OD U CT (OP T ION AL )

AS S E MB L Y

L OT COD E

YE AR

W E E K 02

A = AS S E MB L Y S IT E COD E

0 = 2000

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

TO-262 Package Outline

TO-262 Part Marking Information

E XAMPL E : T H IS IS AN IR L 3103L

L OT CODE 1789

PAR T NU MB E R

INT E R NAT IONAL

AS S E MB L E D ON WW 19, 1997

R E CT IF IE R

IN T H E AS S E MB L Y LINE "C"

L OGO

DAT E CODE

YE AR 7 = 1997

WE E K 19

Note: "P" in as s embly line

pos ition indicates "L ead-F ree"

AS S E MB L Y

L OT CODE

L INE

O R

PAR T NU MB E R

DAT E CODE

INT E R NAT IONAL

R E CT IF IE R

L OGO

DE S IGNAT E S L E AD-F R E E

PR ODU CT (OPT IONAL)

AS S E MB L Y

L OT CODE

YE AR 7 = 1997

WE E K 19

A = AS S E MB L Y S IT E CODE

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IRGB4B60KD1PbF, IRGS/SL4B60KD1

D²Pak Tape & Reel Infomation

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Notes:

V_CC= 80% (V_CES), V_GE= 15V, L = 100µH, R_G= 100Ω.

When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer

to application note #AN-994.

Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 08/04

www.irf.com

IRGSL4B60KD1TRL [INFINEON]

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