IRGSL15B60KDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGSL15B60KDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总15页 (文件大小：821K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT
Technology.
VCES = 600V
IC = 15A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G
E
n-channel
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-262
TO-220AB
IRGB15B60KDPbF
IRGS15B60KDPbF IRGSL15B60KDPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
31
15
62
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
62
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
31
15
64
VGE
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
208
W
PD @ TC = 100°C Maximum Power Dissipation
83
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
0.6
2.1
Units
°C/W
g
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
62
–––
40
1.44
–––
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1
10/03/05
IRGB/S/SL15B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Collector-to-Emitter Breakdown Voltage 600 ––– –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
V
VGE = 0V, IC = 500µA
5, 6,7
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
––– 2.05 2.50
––– 2.10 2.60
3.5 4.5 5.5
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V
VCE = VGE, IC = 250µA
9, 10,11
V
V
TJ = 125°C
TJ = 150°C
9, 10,11
12
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 10.6 –––
––– 5.0 150
––– 500 1000
––– 1.20 1.45
––– 1.20 1.45
S
VCE = 50V, IC = 20A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
ICES
Zero Gate Voltage Collector Current
µA
VFM
IGES
Diode Forward Voltage Drop
8
V
IC = 15A
TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 56
––– 7.0
––– 26
84
10
39
IC = 15A
nC VCC = 400V
CT1
CT4
V
GE = 15V
––– 220 330
––– 340 455
––– 560 785
µJ
IC = 15A, VCC = 400V
VGE = 15V,RG = 22Ω, L = 200µH
Ls = 150nH
TJ = 25°C
––– 34
––– 16
44
22
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
CT4
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 184 200
––– 20 26
ns
µJ
Ls = 150nH, TJ = 25°C
CT4
13,15
WF1WF2
14, 16
CT4
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 355 470
––– 490 600
––– 835 1070
IC = 15A, VCC = 400V
VGE = 15V,RG = 22Ω, L = 200µH
Ls = 150nH
TJ = 150°C
––– 34
––– 18
44
25
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 203 226
––– 28 36
ns
Ls = 150nH, TJ = 150°C
WF1
WF2
Cies
Coes
Cres
Input Capacitance
––– 850 –––
––– 75 –––
––– 35 –––
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
f = 1.0MHz
4
TJ = 150°C, IC = 62A, Vp =600V
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
CT2
CT3
RG = 22Ω
VCC = 500V, VGE = +15V to 0V,
µs
TJ = 150°C, Vp =600V,RG = 22Ω
VCC = 360V, VGE = +15V to 0V
TJ = 150°C
SCSOA
Short Circuit Safe Operting Area
10 ––– –––
WF4
17,18,19
Erec
trr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
––– 540 720
––– 92 111
µJ
ns
A
20,21
VCC = 400V, IF = 15A, L = 200µH
VGE = 15V,RG = 22Ω, Ls = 150nH
CT4,WF3
Irr
Diode Peak Reverse Recovery Current ––– 29
33
Note to are on page 15
2
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IRGB/S/SL15B60KDPbF
35
30
25
20
15
10
5
240
200
160
120
80
8
40
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10 µs
10
1
100 µs
1ms
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGB/S/SL15B60KDPbF
100
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 300µs
TJ = -40°C; tp = 300µs
60
100
-40°C
25°C
150°C
90
80
70
60
50
40
30
20
10
0
V
= 18V
GE
50
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
30
20
10
0
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
0
1
2
3
4
5
6
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 300µs
4
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IRGB/S/SL15B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 5.0A
= 15A
= 30A
I
I
I
= 5.0A
= 15A
= 30A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
4
6
8
10 12 14 16 18 20
(V)
4
6
8
10 12 14 16 18 20
(V)
V
V
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
160
20
18
16
14
12
10
8
T
T
= 25°C
140
120
100
80
J
J
= 150°C
I
I
I
= 5.0A
= 15A
= 30A
CE
CE
CE
60
6
40
T
= 150°C
J
4
20
T
= 25°C
15
2
J
0
0
0
5
10
20
4
6
8
10 12 14 16 18 20
(V)
V
(V)
V
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRGB/S/SL15B60KDPbF
1800
1600
1400
1200
1000
100
10
td
OFF
E
OFF
1000
E
ON
800
600
400
200
0
td
ON
t
F
t
R
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
900
800
700
600
500
400
300
200
100
0
td
OFF
E
OFF
E
ON
100
td
ON
t
R
t
F
10
0
50
100
150
0
50
100
150
R
( )
Ω
R
( )
Ω
G
G
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 600V
ICE= 15A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 15A; VGE= 15V
6
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IRGB/S/SL15B60KDPbF
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
R
R
10
Ω
G =
22
Ω
G =
R
R
47
68
Ω
Ω
G =
G =
R
100
Ω
G =
0
0
10
20
30
40
50
0
20
40
60
80
100
120
I
(A)
R
(
Ω)
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C
TJ = 150°C; IF = 15A
35
30
25
20
15
10
5
3000
2500
2000
1500
1000
500
10
Ω
40A
22
Ω
30A
47
Ω
68
Ω
Ω
100
15A
10A
0
0
0
500
1000
1500
0
500
1000
1500
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 15A; TJ = 150°C
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7
IRGB/S/SL15B60KDPbF
1000
900
800
700
600
500
400
300
200
100
0
10
22
Ω
Ω
Ω
47
100
Ω
0
10
20
30
40
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
14
12
10000
1000
100
300V
400V
Cies
10
8
6
Coes
Cres
4
2
0
10
0
20
40
60
0
20
40
60
80
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 15A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRGB/S/SL15B60KDPbF
1
D = 0.50
0.20
0.1
R1
R1
R2
R2
R3
R3
0.10
0.05
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.231
0.175
0.201
0.000157
τ
1τ1
τ
2 τ2
3τ3
0.01
0.02
0.000849
0.011943
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.1
τ
J τJ
τ
1.164
0.000939
τ
Cτ
1 τ1
Ci= τi/Ri
τ
0.01
0.02
2τ2
0.9645
0.035846
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGB/S/SL15B60KDPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGB/S/SL15B60KDPbF
600
500
400
300
200
100
0
30
25
20
15
10
5
500
400
300
200
100
0
50
40
30
20
10
0
tF
90% IC E
90% test current
test current
5% IC E
5% V C E
10% test current
5% VCE
tR
0
Eon Loss
E o ff L o s s
-100
-10
-100
-5
-0.2
-0.1
0.0
0.1
-0.5
0.0
0.5
1.0
1.5
t (µS)
t (µS )
WF.1- Typ. Turn-off Loss
@ TJ = 150°C using CT.4
WF.2- Typ. Turn-on Loss
@ TJ = 150°C using Fig. CT.4
100
20
500
250
200
150
100
50
Q R R
V C E
0
-100
-200
-300
-400
-500
10
400
tR R
300
0
IC E
10%
Peak
IR R
200
-10
-20
-30
-40
Peak
IRR
100
0
0
-100
-50
-10
0
10
20
30
-0.06
0.04
t (µS )
0.14
t (µS )
WF.4- Typ. Short Circuit
@ TJ = 150°C using CT.3
WF.3- Typ. Reverse Recovery
@ TJ = 150°C using CT.4
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11
IRGB/S/SL15B60KDPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
12
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IRGB/S/SL15B60KDPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
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13
IRGB/S/SL15B60KDPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
OR
14
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IRGB/S/SL15B60KDPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/05
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15
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