IRGSB14C40L [INFINEON]

Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB;


型号：	IRGSB14C40L
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB 局域网汽车点火栅晶体管
文件：	总11页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 93891A

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

IGBT with on-chip Gate-Emitter and Gate-Collector clamps

TERMINAL DIAGRAM

Collector

Features

BV_{CES =}370V min, 430V max

I_C@ T_C= 110°C = 14A

Most Rugged in Industry

Logic-Level Gate Drive

V_CE(on)typ= 1ꢀ2V @7A @25°C

I_L(min)=11ꢀ5A @25°C,L=4ꢀ7mH

> 6KV ESD Gate Protection

Low Saturation Voltage

Gate

High Self-clamped Inductive Switching Energy

Emitter

Description

JEDEC TO-263AB

JEDEC TO-220AB

The advanced IGBT process family includes a

MOS gated, N-channel logic level device which

is intended for coil-on-plug automotive ignition

applications and small-engine ignition circuits*

Unique features include on-chip active voltage

clamps between the Gate-Emitter and

Gate-Collector which provide over voltage

protection capability in ignition circuits*

JEDEC TO-262AA

IRGS14C40L

IRGSL14C40L

IRGB14C40L

NOTE: IRGS14C40L is available in tape and reelꢀ Add a suffix of

TRR or TRL to the part number to determine the orientation of the

device in the pocket, iꢀe, IRGS14C40LTRR or IRGS14C40LTRLꢀ

Absolute Maximum Ratings

Parameter

Max

Clamped

Unit

Condition

R_G= 1K ohm

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

V_GE= 5V

I_C@ T_C= 25°C

I_C@ T_C= 110°C Continuous Collector Current

I_G

Continuous Gate Current

Peak Gate Current

t_PK= 1ms, f = 100Hz

I_Gp

V_GE

Gate-to-Emitter Voltage

Clamped

125

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T = 110°C Maximum Power Dissipation

T_J

Operating Junction and

- 40 to 175 °C

T_STG

V_ESD

I_L

Storage Temperature Range

Electrostatic Voltage

KV C = 100pF, R = 1.5K

ohm

Self-clamped Inductive Switching Current

11.5

L = 4.7mH, T = 25°C

Thermal Resistance

Parameter

Min

Typ

Max

1.2

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(PCB Mounted, Steady State)

R_θ

°C/W

Transient Thermal Impedance, Juction-to-Case (Fig.11)

Z_θ

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Page 1

4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

(unless otherwise specified)

Off-State Electrical Charasteristics @ T_J= 25°C

Parameter

Min Typ Max Unit

Conditions

R _G= 1K ohm, I _C=7A, V_GE= 0V

I _G=2m A

Fig

Collector-to-Emitter Breakdown Voltage

Gate-to-Emitter Breakdown Voltage

Collector-to-Emitter Leakage Current

370 400 430

BV_CES

BV_GES

I _CES

µA R _G=1K ohm, V_CE= 250V

100

µA R _G=1K ohm, V_CE= 250V, T_J=150°C

BV_CEREmitter-to-Collector Breakdown Voltage

I _C= -10m A

ohm

R ₁

R ₂

Gate Series Resistance

Gate-to-Emitter Resistance

30 K ohm

(unless otherwise specified)

On-State Electrical Charasteristics @ T_J= 25°C

Parameter

Min Typ Max Unit

Conditions

Fig

1.2 1.40

1.35 1.55

1.5 1.7

1.55 1.75

1.6 1.8

I _C= 7A, V_GE= 4.5V

Collector-to-Emitter Saturation

Voltage

V_CE(on)

I _C= 10A, V_GE= 4.5V

I _C= 10A, V_GE= 4.5V, T_C= -40^oC

I _C= 14A, V_GE= 5.0V, T_C= -40^oC

I _C= 14A, V_GE= 5.0V

_C= 14A, V_GE= 5.0V, T_C=150^oC

V_GE(th)Gate Threshold Voltage

1.3 1.8 2.2

V_CE= V_GE, I _C= 1 m A, T_C=25^oC

3, 5

_CE= V_GE, I _C= 1 m A, T_C=150^oC

_CE= 25V, I _C= 10A, T_C=25^oC

0.75

1.8

g_fs

Transconductance

I _C

Collector Current

V_CE= 10V, V_GE= 4.5V

(unless otherwise specified)

Switching Characteristics @ T_J= 25°C

Parameter

Min Typ Max Unit

Conditions

Fig

Q _g

Total Gate charge

I _C= 10A, V_CE=12V, V_GE=5V

Q _ge

Q _gc

Gate - Emitter Charge

Gate - Collector Charge

Turn - on delay time

2.5

nC I _C= 10A, V_CE=12V, V_GE=5V

_C= 10A, V_CE=12V, V_GE=5V

0.6 0.9 1.35

t _d(on)

V_GE=5V, R_G=1K ohm, L=1mH, V_CE=14V

Rise time

1.6 2.8

t _r

µs V_GE=5V, R_G=1K ohm, L=1mH, V_CE=14V

V_GE=5V, R_G=1K ohm, L=1mH, V_CE=300V

Turn - off delay time

3.7

8.3

t _d(off)

C _ies

Input Capacitance

550 825

100 150

V_GE=0V, V_CE=25V, f=1M H z

C _oes

C _res

Output Capacitance

pF V_GE=0V, V_CE=25V, f=1M H z

V_GE=0V, V_CE=25V, f=1M H z

Reverse Transfer Capacitance

15.5

11.5

16.5

7.5

L=0.7m H, T_C=25°C

L=2.2m H, T_C=25°C

L=4.7m H, T_C=25°C

L=1.5m H, T_C=150°C

I _L

Self-Clamped

Inductive Switching Current

L=4.7m H, T_C=150°C

L=8.7m H, T_C=150°C

T_J=150^oC,

t _SC

Short Circuit Withstand Time

120

µs V_CC= 16V, L = 10µH

R _G= 1K ohm, V_GE= 5V

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

Fig.1 - Typ. Output Characteristics

Fig.2 - Typ. Output Characteristics

T_J=25°C

T_J=125°C

V_GE= 10 V

V_GE= 5.0V

V_GE= 4.5V

V_GE= 4.0V

V_GE= 3.7V

_GE= 4.5V

_GE= 4.0V

V_GE= 3.7V

V_CE(V)

Fig.3 - Transfer Characteristics

_CE=20V; tp=20µs

Fig.4 - Typical V_CEvs T_J

V_GE=4.5V

100

1.6

T_J= 25°C

T_J= 125°C

1.5

1.4

1.3

1.2

1.1

1.0

I_C= 10A

I_C= 7A

150

-50

100

200

T_J(°C)

V_GE(V)

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

Fig.6 - Typ. Capacitance vs V_CE

V_GE=0V; V_CE=25V; f=1MHz

Fig.5 - Typical V_GE(th)vs T_J

I_C=1mA

1000

2.2

2.0

1.8

1.6

1.4

1.2

1.0

C _ies

100

C _oes

C _res

-50

100 150

200

100

T_J(°C)

V_CE(V)

Fig.7 - Typ. Gate Charge vs V_GE

I_C=10A; V_CE=12V; V_GE=5V

Fig.8 - Typical V_CEvs V_GE

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

I_C= 7A; 125°C

I_C= 7A; 25°C

I_C=10A; 125°C

I_C=10A; 25°C

2.5

3.5

4.5

_GE(V)

Q_G, Total Gate Charge (nC)

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

Fig.9 - Self-clamp Avalance Current vs

Fig.10 - Self-clamp Avalance Current

Inductance @ 25°C

vs Inductance @ 150°C

Typical

Minimum

Inductance (mH)

Fig*11 - Transient Thermal Impedance, Junction-to-Case

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

Notes:

1. Duty factor D = t / t

SINGLE PULSE

(THERMAL RESPONSE)

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

Fig.12 - Switching Waveform for Time Measurement

V_GE= 5V; R = 1K ; L= 1mH; V_CE= 14V; used circuit in Fig.14

Ω

450

400

350

300

250

200

150

100

V_Clamp

V_{cl (measured)}

V_GE

t _{d (o f f )}

-1

-2

t _r

-2

-50

-14

-10

-6

t (µs)

Fig.13 - Self-clamped Inductive Switching Waveform

L=4.7mH; T_C=25°C; used circuit in Fig.14

500

400

300

200

100

V _clamp

I _CE

-100

-2.E-05 -1.E-05 0.E+00 1.E-05

2.E-05

time

3.E-05

4.E-05

5.E-05

6.E-05

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

Figꢀ14 - Test Circuit

0.47 Ω

1KΩ

D.U.T.

Ice

Figꢀ15 - Gate Charge Circuit

VCC

DUT

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Page 7

4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

TO-263AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

10.16 (.400)

REF.

- B -

4.69 (.185)

4.20 (.165)

1.40 (.055)

MAX.

- A -

1.32 (.052)

1.22 (.048)

6.47 (.255)

6.18 (.243)

1.78 (.070)

1.27 (.050)

15.49 (.610)

14.73 (.580)

2.79 (.110)

2.29 (.090)

2.61 (.103)

2.32 (.091)

5.28 (.208)

4.78 (.188)

8.89 (.350)

REF.

1.40 (.055)

1.14 (.045)

1.39 (.055)

1.14 (.045)

0.55 (.022)

0.46 (.018)

0.93 (.037)

0.69 (.027)

5.08 (.200)

0.25 (.010)

B A M

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

LEAD ASSIGNMENTS

1 - GATE

NOTES:

1 DIMENSIONS AFTER SOLDER DIP.

17.78 (.700)

2 - DRAIN

3 - SOURCE

2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

3 CONTROLLING DIMENSION : INCH.

4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

3.81 (.150)

2.54 (.100)

2.08 (.082)

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4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

TO-263AB Package Outline in Tape and Reel

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

4.10 (.161)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

3.90 (.153)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

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Page 9

4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

TO-262AA Package Outline

Dimensions are shown in millimeters (inches)

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Page 10

4/7/2000

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Ignition IGBT

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B -

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

MIN

LEAD ASSIGNMENTS

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH

3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

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4/7/2000

IRGSB14C40L [INFINEON]

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