IRGS8B60KPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRGS8B60KPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总13页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95645A
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 20A, TC=100°C
G
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
tsc>10µs, TJ=150°C
E
VCE(on) typ. = 1.8V
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS8B60K
TO-262
IRGSL8B60K
TO-220AB
IRGB8B60KPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
600
V
VCES
28
IC @ TC = 25°C
19
56
A
IC @ TC = 100°C
ICM
56
ILM
±20
V
VGE
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
167
W
PD @ TC = 25°C
83
PD @ TC = 100°C
-55 to +175
TJ
Storage Temperature Range
Storage Temperature Range, for 10 sec.
°C
TSTG
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.90
–––
62
Units
Junction-to-Case- IGBT
Rθ
JC
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
0.50
–––
°C/W
RθCS
Rθ
JA
Junction-to-Ambient (PCB Mount, Steady State)
Weight
–––
40
RθJA
1.44
–––
g
www.irf.com
1
11/18/04
IRGB/S/SL8B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V
GE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
0.57
1.8
2.2
2.3
4.5
-9.5
3.7
1.0
200
—
V
∆
V(BR)CES/ TJ
∆
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 150°C
—
V/°C
VCE(on)
2.2
2.5
2.6
5.5
—
5,6,7
V
8,9,10
I
C = 8.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1mA (25°C-125°C)
VGE(th)
Gate Threshold Voltage
8,9,10,
11
∆
∆
VGE(th)/ TJ
gfe
ICES
Threshold Voltage temp. coefficient
Forward Transconductance
mV/°C
S
VCE = 50V, IC = 8.0A, PW = 80µs
GE = 0V, VCE = 600V
—
V
Zero Gate Voltage Collector Current
150
500
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
µA
800 1320
±100 nA
IGES
VGE = ±20V
Gate-to-Emitter Leakage Current
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
IC = 8.0A
CC = 480V
VGE = 15V
17
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
29
3.7
14
—
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
V
—
nC
µJ
ns
CT1
—
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 25°C
CT4
160
160
320
23
268
268
433
27
IC = 8.0A, VCC = 400V
V
GE = 15V, RG = 50Ω, L = 1.1mH
CT4
Rise time
22
26
td(off)
tf
TJ = 25°C
Turn-Off delay time
140
32
150
42
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 8.0A, VCC = 400V
CT4
12,14
WF1,WF2
13,15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
220
270
490
22
330
381
608
27
V
GE = 15V, RG = 50Ω, L = 1.1mH
µJ
ns
TJ = 150°C
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 150°C
Rise time
21
25
td(off)
tf
WF1
Turn-Off delay time
180
40
198
56
Fall time
WF2
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
440
38
—
VCC = 30V
16
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
16
—
f = 1.0MHz
TJ = 150°C, IC = 34A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50
TJ = 150°C, Vp = 600V, RG = 100Ω
VCC=360V,VGE = +15V to 0V
FULL SQUARE
4
Ω
CT2
CT3
WF3
SCSOA
Short Circuit Safe Operating Area
10
—
—
Notes to are on page 13.
2
www.irf.com
IRGB/S/SL8B60KPbF
35
30
25
20
15
10
5
175
150
125
100
75
50
25
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
100 µs
10
1ms
1
10ms
0.1
DC
0
0.01
10
100
(V)
1000
1
10
100
(V)
1000
10000
V
V
CE
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
www.irf.com
3
IRGB/S/SL8B60KPbF
40
40
35
30
25
20
15
10
5
V
= 18V
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
40
35
30
V
= 18V
GE
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
1
2
3
4
5
6
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
www.irf.com
IRGB/S/SL8B60KPbF
20
18
16
14
12
10
8
20
18
16
14
12
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
100
80
60
40
20
0
20
18
16
14
12
10
8
T
= 25°C
J
T
= 150°C
J
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
T
= 150°C
J
4
T
J
= 25°C
15
2
0
0
5
10
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
www.irf.com
5
IRGB/S/SL8B60KPbF
600
1000
100
10
500
td
OFF
400
E
OFF
300
200
100
0
t
F
E
ON
td
ON
t
R
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
I
C
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V,
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50Ω; VGE= 15V
RG= 50Ω; VGE= 15V
700
600
500
400
300
200
100
0
10000
E
ON
E
1000
100
10
OFF
td
OFF
td
ON
t
F
t
R
0
100
200
300
400
500
0
100
200
300
400
500
R
(
)
Ω
R
( )
Ω
G
G
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
6
www.irf.com
IRGB/S/SL8B60KPbF
16
1000
100
10
Cies
14
300V
Coes
Cres
12
10
400V
8
6
4
2
0
1
1
10
(V)
100
0
5
10
15
20
25
30
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 16- Typ. Capacitance vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 8.0A; L = 600µH
10
1
D = 0.50
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.20
0.10
0.05
τ
J τJ
τ
0.491
0.000190
τ
Cτ
0.1
1 τ1
Ci= τi/Ri
τ
2τ2
0.409
0.001153
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
7
IRGB/S/SL8B60KPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
www.irf.com
IRGB/S/SL8B60KPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
24
20
16
12
8
tf
Vce
tr
Vce
Ice
90% Ice
5% Vce
90% Ice
10% Ice
6
4
5% Ice
Ic e
2
4
0
5% Vce
Eoff Loss
0
-100
-200
-2
-4
Eon
Loss
-100
-4
0
0.2
0.4
0.6
0.8
1
0.3
0.5
0.7
Time (uS)
0.9
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
350
300
250
200
150
100
50
80
60
40
20
0
0
0.00
10.00
20.00
30.00
40.00
50.00
Time (uS)
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
www.irf.com
9
IRGB/S/SL8B60KPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT C ODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTE RNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
10
www.irf.com
IRGB/S/SL8B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 02, 2000
IN THE AS SEMBLY LINE "L"
RECTIFIER
LOGO
F530S
DATE CODE
YEAR 0 = 2000
WE EK 02
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WEEK 02
A = ASSEMBLYSITE CODE
www.irf.com
11
IRGB/S/SL8B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE EK 19
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEE K 19
A = AS S E MB LY S IT E CODE
12
www.irf.com
IRGB/S/SL8B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 50Ω.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
www.irf.com
13
相关型号：
IRGS8B60KTRL
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
INFINEON
IRGS8B60KTRR
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
INFINEON
IRGSB14C40L
Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB
INFINEON
IRGSL30B60KPBF
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明