IRG6IC30UPBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT型号: | IRG6IC30UPBF |
厂家: | Infineon |
描述: | PDP TRENCH IGBT |
文件: | 总7页 (文件大小:286K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97386
IRG6IC30UPbF
Key Parameters
PDP TRENCH IGBT
Features
l
VCE min
V
600
1.50
250
150
V
V
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
CE(ON) typ. @ IC = 25A
l
I
RP max @ TC= 25°C
A
°C
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
TJ max
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
25
A
12
250
37
Power Dissipation
W
15
Power Dissipation
0.30
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
–––
Max.
3.1
Units
°C/W
Rθ
Junction-to-Case
Junction-to-Ambient
JC
RθJA
–––
65
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1
03/31/09
IRG6IC30UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1.0mA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
600 ––– –––
15 ––– –––
V
V
VGE = 0V, ICE = 1.0A
V(BR)ECS
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
VGE = 15V, ICE = 25A
VGE = 15V, ICE = 40A
VGE = 15V, ICE = 70A
∆ΒVCES/∆TJ
––– 0.49 ––– V/°C
––– 1.29 –––
––– 1.50 1.92
1.73 –––
––– 2.16 –––
––– 2.88 –––
––– 1.51 –––
V
VCE(on)
Static Collector-to-Emitter Voltage
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 25A, TJ = 150°C
V
CE = VGE, ICE = 500µA
CE = 600V, VGE = 0V
VGE(th)
Gate Threshold Voltage
2.6
––– 5.0
V
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -8.9 ––– mV/°C
V
–––
–––
–––
2.0
10
40
20
VCE = 600V, VGE = 0V, TJ = 100°C
–––
100
µA
nA
V
CE = 600V, VGE = 0V, TJ = 125°C
CE = 600V, VGE = 0V, TJ = 150°C
V
––– 150 –––
––– ––– 100
––– ––– -100
VGE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
VGE = -30V
VCE = 25V, ICE = 25A
VCE = 400V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
32
79
30
20
16
–––
–––
–––
–––
–––
S
nC
IC = 25A, VCC = 400V
Ω
RG = 10 , L=200µH
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
––– 160 –––
––– 120 –––
IC = 25A, VCC = 400V
RG = 10Ω, L=200µH
TJ = 150°C
Turn-On delay time
Rise time
–––
–––
18
17
–––
–––
Turn-Off delay time
Fall time
––– 190 –––
––– 240 –––
100 ––– –––
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
tst
Shoot Through Blocking Time
ns
µJ
––– 1020 –––
––– 1150 –––
Ω,
TJ = 25°C
EPULSE
VCC = 240V, RG= 5.1
Energy per Pulse
L = 220nH, C= 0.40µF, VGE = 15V
Ω,
VCC = 240V, RG= 5.1
Class 2
(Per JEDEC standard JESD22-A114)
Class B
TJ = 100°C
Human Body Model
Machine Model
ESD
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 2390 –––
VCE = 30V
Output Capacitance
–––
–––
–––
85
58
–––
–––
pF
ƒ = 1.0MHz,
Between lead,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
4.5 –––
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5 –––
and center of die contact
Notes:
Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRG6IC30UPbF
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
V
V
V
V
V
V
= 18V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
500
500
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
0
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
500
450
20
I
= 25A
C
18
16
14
12
10
8
T
= 25°C
J
400
350
300
250
200
150
100
50
T
= 150°C
T = 25°C
J
J
T = 150°C
J
6
4
2
0
0
0
5
10
15
20
0
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
V
, Voltage Gate-to-Emitter (V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG6IC30UPbF
30
250
200
150
100
50
25
20
15
10
5
ton= 1.0µs
Duty cycle <= 0.02
Half Sine Wave
0
0
25
50
75
100
125
150
0
25
50
75
(°C)
100
125
150
Case Temperature (°C)
T
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1200
1200
V
= 240V
L = 220nH
C = 0.4µF
CC
1100
1000
900
800
700
600
500
400
L = 220nH
C = variable
1100
100°C
1000
100°C
900
25°C
25°C
800
700
600
170
180
190
200
210
220
230
195 200 205 210 215 220 225 230 235 240
I , Peak Collector Current (A)
V
Collector-to-Emitter Voltage (V)
C
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1600
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
1400
1200
1000
800
C= 0.4µF
10µsec
100
100µsec
1msec
C= 0.3µF
C= 0.2µF
10
Tc = 25°C
Tj = 175°C
600
Single Pulse
400
1
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG6IC30UPbF
100000
10000
1000
100
16
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
+ C , C SHORTED
ce
GS
I
= 25A
V
C
C
C
C
ies
ge
gd
= C
res
oes
gc
= C + C
= 120V
ce
gc
CES
V
V
= 300V
= 400V
CES
CES
Cies
6
4
Coes
2
Cres
V
10
0
0
100
200
300
400
500
0
20
Q
40
60
80
100
, Collector-toEmitter-Voltage(V)
, Total Gate Charge (nC)
CE
G
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.21623 0.000302
τ
τ
J τJ
τ
Cτ
0.01
0.001
0.41114 0.002861
1.31259 0.179036
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
1.41309
2.673
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRG6IC30UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRG6IC30UPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational performance
or safety. Please contact your IR representative if you have
specific design or use requirements or for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/09
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