IRG6I330UPBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRG6I330UPBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96192A
IRG6I330UPbF
Key Parameters
PDP TRENCH IGBT
Features
l
VCE min
V
330
1.30
250
150
V
V
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
CE(ON) typ. @ IC = 28A
l
IRP max @ TC= 25°C
TJ max
A
°C
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
28
A
15
250
43
Power Dissipation
W
17
Power Dissipation
0.34
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
–––
Max.
2.9
Units
°C/W
RθJC
Junction-to-Case
www.irf.com
1
09/11/09
IRG6I330UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
330 ––– –––
V
VGE = 0V, ICE = 1 A
V(BR)ECS
30 ––– –––
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 15A
∆ΒVCES/∆TJ
––– 0.29 ––– V/°C
––– 1.13 –––
VGE = 15V, ICE = 28A
––– 1.30 1.55
VGE = 15V, ICE = 40A
VGE = 15V, ICE = 70A
1.43 –––
––– 1.80 –––
––– 2.38 –––
––– 2.10 –––
V
VCE(on)
Static Collector-to-Emitter Voltage
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 70A, TJ = 150°C
V
CE = VGE, ICE = 500µA
VGE(th)
Gate Threshold Voltage
2.6
–––
–––
–––
–––
––– 5.0
V
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
-12 ––– mV/°C
V
V
V
CE = 330V, VGE = 0V
2.0
10
40
20
CE = 330V, VGE = 0V, TJ = 100°C
CE = 330V, VGE = 0V, TJ = 125°C
–––
200
µA
nA
VCE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
––– 150 –––
––– ––– 100
––– ––– -100
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
V
GE = -30V
VCE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
94
86
36
39
32
–––
–––
–––
–––
–––
S
V
nC
IC = 25A, VCC = 196V
R = 10 , L=200µH, L = 150nH
ns
ns
Ω
G
S
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
––– 120 –––
–––
–––
–––
55
37
33
–––
–––
–––
IC = 25A, VCC = 196V
Turn-On delay time
Rise time
R = 10 , L=200µH, L = 150nH
Ω
G
S
TJ = 150°C
Turn-Off delay time
Fall time
––– 159 –––
––– 95 –––
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
Shoot Through Blocking Time
100 ––– –––
ns
µJ
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
––– 943 –––
EPULSE
Energy per Pulse
––– 1086 –––
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 2
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
ESD
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 2275 –––
VCE = 30V
Output Capacitance
––– 108 –––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
75
–––
–––
4.5
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5
–––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, ton=2µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRG6I330UPbF
500
400
300
200
100
0
500
400
300
200
100
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
500
500
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
400
300
200
100
0
400
300
200
100
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
500
25
I
= 25A
C
T
= 25°C
J
400
300
200
100
0
20
15
10
5
T = 150°C
J
T = 25°C
J
T = 150°C
J
0
0
2
4
6
8
10 12 14 16 18
(V)
5
10
15
20
V
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
www.irf.com
3
IRG6I330UPbF
30
25
20
15
10
5
260
240
220
200
180
160
140
120
100
80
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
60
40
20
0
0
0
25
50
75
(°C)
100
125
150
25
50
75
100
125
150
T
C
Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1100
1100
V
= 240V
L = 220nH
C = 0.4µF
CC
1050
1000
950
900
850
800
750
700
650
600
L = 220nH
C = variable
1000
100°C
100°C
900
800
25°C
25°C
700
600
500
150 160 170 180 190 200 210 220 230
195 200 205 210 215 220 225 230 235 240
I , Peak Collector Current (A)
C
V
Collector-to-Supply Voltage (V)
CC,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1400
1000
V
= 240V
CC
C= 0.4µF
L = 220nH
t = 1µs half sine
1200
1000
800
100
10µsec
100µsec
C= 0.3µF
1msec
10
C= 0.2µF
600
1
400
Tc = 25°C
Tj = 150°C
Single Pulse
200
0.1
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
www.irf.com
IRG6I330UPbF
16
14
12
10
8
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I
= 25A
V
C
C
C
C
SHORTED
ies
ge
gd
ce
= C
= 240V
res
oes
gc
CES
= C + C
ce
gc
V
V
= 150V
= 60V
CES
CES
Cies
6
4
Coes
Cres
2
0
10
0
20
40
60
80
100
0
50
100
150
200
Q
, Total Gate Charge (nC)
G
V
, Collector-toEmitter-Voltage(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.01
0.02
0.01
0.11889 0.000045
τ
τ
J τJ
τ
Cτ
0.35666 0.001841
1.09829 0.128114
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
1.32616
2.452
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRG6I330UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
www.irf.com
IRG6I330UPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational performance
or safety. Please contact your IR representative if you have
specific design or use requirements or for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2009
www.irf.com
7
相关型号：
IRG6S320U
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG6S320UTRL
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG6S320UTRLPBF
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG6S320UTRR
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG6S320UTRRPBF
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG7I319UPBF
Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL-PAK-3
INFINEON
IRG7IA19UPBF
Insulated Gate Bipolar Transistor, 30A I(C), 360V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明