IRFP3710HR [INFINEON]
Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN;
| 型号： | IRFP3710HR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91490C
IRFP3710
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 100V
Ω
R
DS(on) = 0.025W
l Fully Avalanche Rated
G
ID = 57A
Description
S
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
57
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V ꢀ
Continuous Drain Current, VGS @ 10V ꢀ
Pulsed Drain Current ꢀ
40
A
180
200
1.3
± 20
530
28
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Currentꢀ
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RqJC
RqCS
RqJA
0.75
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
IRFP3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.025 W
VGS = 10V, ID = 28A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28Aꢀ
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Ω
2.0
20
––– 4.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 190
––– ––– 26
––– ––– 82
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 1.7V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
14 –––
59 –––
58 –––
48 –––
VDD = 50V
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5W
RD = 1.7W, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0 –––
nH
pF
G
from package
–––
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 3000 –––
––– 640 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)ꢀ
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
57
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
180
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 210 320
––– 1.7 2.6
V
TJ = 25°C, IS = 28A, VGS = 0V
ns
TJ = 25°C, IF = 28A
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width £300µs; duty cycle £2%.
ꢀ Uses IRF3710 data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.4mH
RG = 25W, IAS = 28A. (See Figure 12)
I £28A, di/dt £460A/µs, VDD £V(BR)DSS
,
SD
TJ £175°C
2
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IRFP3710
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
1
1
0.1
A
A
100
0.1
1
10
100
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
I
= 46A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
100
T J = 175°C
10
VDS = 50V
20µs PULSE W ID TH
V
= 10V
GS
1
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP3710
6000
5000
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= 28A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
rss
oss
gd
C
C
iss
4000
3000
2000
1000
0
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
10µs
100
10
1
100
10
1
T
= 175°C
J
100µs
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
Single Pulse
A
A
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFP3710
60
50
40
30
20
10
0
R D
VDS
V GS
10V
D.U.T.
RG
+VDD
-
Pulse Width £1µs
Duty Factor £ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP3710
1200
1000
800
600
400
200
0
I
D
TOP
11A
20A
28A
15V
BOTTOM
DRIVER
L
V
DS
D.U.T
AS
R
G
+
V
D D
-
I
A
20V
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
25
75
100
125
150
V
(BR )D SS
Starting T , Junction Tem perature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP3710
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
· dv/dt controlled by RG
+
-
· Driver same type as D.U.T.
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP3710
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TO LERANCING
P ER ANSI Y14.5M , 1982.
CONTROLLING DIMENSIO N : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD AS SIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
W ITH ASSEMBLY
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 3A1Q
IRFPE30
3A1Q 9302
DATE CODE
(YYW W )
ASSEMBLY
LOT
CODE
YY
= YEAR
W W W EEK
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http://www.irf.com/
Data and specifications subject to change without notice. 10/98
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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