IRFP360LC [INFINEON]
Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A); 功率MOSFET （ VDSS = 400V ， RDS（ON） = 0.20ohm ，ID = 23A ）
| 型号： | IRFP360LC |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) |
| 文件： | 总8页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1230
IRFP360LC
HEXFET® Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
VDSS = 400V
RDS(on) = 0.20Ω
ID = 23A
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
23
14
A
92
280
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
2.2
VGS
EAS
IAR
Gate-to-Source Voltage
±30
Single Pulse Avalanche Energy
Avalanche Current
1200
23
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
28
mJ
V/ns
4.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
Typ.
––––
0.24
Max.
0.45
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––––
––––
°C/W
40
––––
Revision 0
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IRFP360LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
400 ––– –––
––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.20
2.0 ––– 4.0
13 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 28
––– ––– 45
––– 16 –––
––– 75 –––
––– 42 –––
––– 50 –––
Ω
V
S
VGS = 10V, ID = 14A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 14A
VDS = 400V, VGS = 0V
VDS = 320V, VGS = 0V, TJ = 125°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 23A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 320V
VGS = 10V, See Fig. 6 and 13
VDD = 200V
ID = 23A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 7.9Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 5.0 –––
6mm (0.25in.)
nH
pF
from package
––– 13
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3400 –––
––– 540 –––
––– 42 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– –––
23
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
92
p-n junction diode.
TJ = 25°C, IS = 23A, VGS = 0V
TJ = 25°C, IF = 23A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.8
––– 400 600
V
ns
µC
Qrr
ton
––– 5.7
8.6
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 23A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting T J = 25°C, L = 4.0mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 23A. (See Figure 12)
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IRFP360LC
1000
100
10
1000
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
100
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
C
= 150°C
C
0.1
0.1
0.1
1
10
100
0.1
1
1 0
10 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 23A
D
T
= 150°C
J
T
= 25°C
J
1
V
= 50V
D S
20µs PU LS E W ID TH
V
GS
= 10V
0.1
4
5
6
7
8
9
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
, G ate-to-Source V oltage (V)
T
J
, Junction Temperature (°C)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFP360LC
20
16
12
8
6000
I
= 23A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
V
V
V
= 320V
= 200V
5000
4000
3000
2000
1000
0
DS
DS
DS
ds
gd
=
80V
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
30
60
90
120
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 150°C
J
100µs
1ms
T = 25°C
J
T
T
= 25°C
= 150°C
C
J
10ms
V
GS
= 0V
Single Pulse
1
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFP360LC
RD
VDS
VGS
25
20
15
10
5
D.U.T.
RG
VDD
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D
= 0.5 0
0.1
0 .20
0.1 0
0.05
P
0 .02
0.0 1
DM
0.01
t
1
SING LE PUL SE
t
2
(T HERM AL RESPO NSE)
N o tes:
1. D uty fa ctor D =
t
/ t
1 2
2. P e ak T = P
x Z
+ T
C
D M
J
thJC
1
0.001
0.00001
0.0001
0 .001
0.01
0.1
10
t1 , Rectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP360LC
10 V
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30 00
25 00
20 00
15 00
10 00
5 00
I
D
TOP
10A
15A
BOTTOM 23A
Fig 12a. Unclamped Inductive Test Circuit
V
DD
= 50V
0
25
50
75
100
125
150
Starting T , Juntion Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFP360LC
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by R G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRF360LC
Package Outline
TO-247AC
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 3A1Q
IRFPE30
3A1Q 9302
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
相关型号：
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The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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