IRFP360LCPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRFP360LCPBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:348K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94951
IRFP360LCPbF
• Lead-Free
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IRFP360LCPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
2 - Drain2 - Collector
3X
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/04
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相关型号:
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Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
INFINEON
IRFP4110
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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