IRFHM8363PBF [INFINEON]

Power Stage for high frequency buck converters; 高频降压转换器功率级


型号：	IRFHM8363PBF
厂家：	Infineon
描述：	Power Stage for high frequency buck converters 高频降压转换器功率级转换器
文件：	总9页 (文件大小：304K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFHM8363PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

14.9

Ω

(@V_GS= 4.5V)

20.4

6.7

Q_{g typ}

PQFN Dual 3.3X3.3 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Power Stage for high frequency buck converters

• Battery Protection charge and discharge switches

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 6.7°C/W)

Low Profile (<1.0mm)

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFHM8363TRPBF

IRFHM8363TR2PBF

PQFN Dual 3.3mm x 3.3mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

8.6

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

116

2.7

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Notes through are on page 9

May 13, 2013

IRFHM8363PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

∆ΒV_DSS/∆T_J

R_DS(on)

––– 0.022

–––

V/°C Reference to 25°C, I_D= 1.0mA

–––

1.35

–––

12.2

16.3

1.8

-6.3

–––

14.9

20.4

2.35

V_GS= 10V, I_D= 10A

mΩ

V_GS= 4.5V, I_D= 8.0A

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 25µA

∆

V_GS(th)

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

1.0

µA

V_DS= 24V, V_GS= 0V

150

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

-100

V_GS= -20V

gfs

Q_g

–––

V_DS= 10V, I_D= 10A

–––

nC V_GS= 10V, V_DS= 15V, I_D= 10A

Total Gate Charge

6.7

2.1

1.0

2.0

1.6

3.0

7.6

1.6

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

V_DS= 15V

Q_gs2

Q_gd

V_GS= 4.5V

I_D= 10A

Q_godr

Gate Charge Overdrive

Q_sw

Switch Charge (Q_gs2+ Q_gd

Output Charge

)

Q_oss

R_G

nC V_DS= 24V, V_GS= 0V

Ω

Gate Resistance

Turn-On Delay Time

Rise Time

–––

t_d(on)

t_r

t_d(off)

t_f

V_DD= 15V, V_GS= 4.5V

–––

I_D= 10A

Ω

R_G=1.8

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_GS= 0V

1165

260

100

V_DS= 10V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Avalanche Characteristics

Parameter

Typ.

–––

Max.

Units

Single Pulse Avalanche Energy

E_AS

I_AR

Avalanche Current

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

–––

showing the

integral reverse

(Body Diode)

Pulsed Source Current

I_SM

–––

116

p-n junction diode.

(Body Diode)

V_SD

t_rr

T = 25°C, I = 10A, V = 0V

Diode Forward Voltage

–––

1.3

T = 25°C, I = 10A, V_DD= 15V

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Q_rr

t_on

di/dt = 280A/µs

Time is dominated by parasitic Inductance

Thermal Resistance

Parameter

Typ.

–––

Max.

6.7

Units

Junction-to-Case

R_θJC(Bottom)

R_θJC(Top)

R_θJA

Junction-to-Case

°C/W

Junction-to-Ambient

R_θJA(<10s)

May 13, 2013

IRFHM8363PbF

1000

100

1000

100

VGS

10V

VGS

10V

TOP

7.0V

5.0V

4.5V

3.5V

3.0V

2.8V

2.5V

7.0V

5.0V

4.5V

3.5V

3.0V

2.8V

2.5V

BOTTOM

2.5V

60µs PULSE WIDTH

Tj = 150°C

≤

60µs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

1.6

1.4

1.2

1.0

0.8

0.6

= 10A

= 10V

100

= 150°C

= 25°C

= 15V

≤

60µs PULSE WIDTH

1.0

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

10000

1000

100

14.0

= 0V,

= C

f = 1 MHZ

I = 10A

+ C , C

SHORTED

iss

12.0

= C

rss

oss

= C + C

= 24V

= 15V

= 6.0V

10.0

8.0

6.0

4.0

2.0

0.0

iss

oss

rss

, Drain-to-Source Voltage (V)

100

10 12 14 16 18 20

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

May 13, 2013

IRFHM8363PbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100µsec

1msec

10msec

= 150°C

Limited by source

bonding technology

= 25°C

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

100

0.0

0.5

1.0

1.5

2.0

2.5

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

2.8

Limited by source

bonding technology

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

= 25µA

= 250µA

= 1.0mA

= 1.0A

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Case Temperature (°C)

, Temperature ( °C )

Fig 9. Maximum Drain Current vs.

Fig 10. Threshold Voltage vs. Temperature

Case(Bottom)Temperature

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

IRFHM8363PbF

120

100

= 10A

TOP

2.3A

4.7A

BOTTOM 10A

= 125°C

= 25°C

100

125

150

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

(BR)DSS

15V

DRIVER

D.U.T

20V

Ω

0.01

Fig 14b. Unclamped Inductive Waveforms

Fig 14a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

10%

V_GS

10V

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

t_d(on)

t_d(off)

t_r

t_f

Fig 15a. Switching Time Test Circuit

Fig 15b. Switching Time Waveforms

May 13, 2013

IRFHM8363PbF

Driver Gate Drive

P.W.

D =

D.U.T

Period

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Vds

Vgs

VCC

DUT

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 18. Gate Charge Waveform

Fig 17. Gate Charge Test Circuit

May 13, 2013

IRFHM8363PbF

PQFN Dual 3.3 x 3.3 Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to

application noteAN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN Dual 3.3 x 3.3 Part Marking

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

May 13, 2013

IRFHM8363PbF

PQFN Dual 3.3x3.3 Tape and Reel

May 13, 2013

IRFHM8363PbF

Qualification information^†

Cons umer^††

(per JEDEC JESD47F ^†††guidelines )

MS L 1

(per JEDEC J-S T D-020D^†††

Qualification level

Moisture Sensitivity Level

RoHS compliant

PQFN Dual 3.3mm x 3.3mm

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.58mH, R_G= 50Ω, I_AS= 10A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

ꢀ When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:

http://www.irf.com/technical-info/appnotes/an-994.pdf

Calculated continuous current based on maximum allowable junction temperature.

Current is limited to 10A by source bonding technology.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/

May 13, 2013

IRFHM8363PBF [INFINEON]

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