IRFHM9331 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFHM9331
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IRFHM9331PbF

HEXFET^®Power MOSFET

V_DS

-30

14.6

5 D

6 D

7 D

8 D

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-11

3mm x 3mm PQFN

(@T_A= 25°C)

Applications

l System/load switch

Features and Benefits

Features

Benefits

Low Thermal Resistance to PCB (<6.0°C/W)

Enable better thermal dissipation

Compatible with Existing Surface Mount Techniques

results in Easier Manufacturing

⇒

Environmentally Friendlier

Increased Reliability

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

IRFHM9331TRPbF

IRFHM9331TR2PbF

PQFN 3mm x 3mm

Tape and Reel

4000

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

-30

± 25

-11

-9

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-24

-90

2.8

1.8

Power Dissipation

P_D@T_A= 25°C

P_D@ T_A= 70°C

W/°C

°C

Power Dissipation

Linear Derating Factor

0.02

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 2

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December 16, 2013

IRFHM9331PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= -250μA

Reference to 25°C, I_D= -1mA

V_GS= -20V, I_D= -11A

Parameter

Drain-to-Source Breakdown Voltage

Min.

Typ.

–––

0.02

10.0

11.7

-1.8

-5.1

–––

Max.

–––

14.6

-2.4

–––

-1.0

-150

-10

Units

BV_DSS

ΔΒ

R_DS(on)

-30

–––

-1.3

–––

V_DSS/ T_J

Breakdown Voltage Temp. Coefficient

V/°C

Static Drain-to-Source On-Resistance

V_GS= -10V, I_D= -11A

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= -25μA

V_GS(th)

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

mV/°C

V_DS= -24V, V_GS= 0V

I_DSS

μA

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -25V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

μA

V_GS= 25V

V_DS= -10V, I_D= -9.0A

V_DS= -15V,V_GS= -4.5V,I_D= - 9.0A

V_GS= -10V

gfs

Q_g

–––

Q_g

Total Gate Charge

V_DS= -15V

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

4.4

–––

I_D= -9.0A

V_DD= -15V, V_GS= -4.5V

Turn-On Delay Time

Rise Time

I_D= -1.0A

t_d(off)

t_f

R_G= 6.8

Turn-Off Delay Time

Fall Time

See Figs. 19a & 19b

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

1543

310

208

V_DS= -25V

Output Capacitance

Reverse Transfer Capacitance

ƒ = 1.0KHz

Avalanche Characteristics

Typ.

–––

Max.

Parameter

Units

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

-9.0

Diode Characteristics

Conditions

Parameter

Min.

Typ.

Max.

Units

I_S

MOSFET symbol

Continuous Source Current

–––

-2.8

showing the

(Body Diode)

I_SM

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

-90

V_SD

t_rr

T = 25°C, I = -2.8A, V = 0V

Diode Forward Voltage

–––

-1.2

T = 25°C, I = -2.8A, V_DD= -24V

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

di/dt = 100/μs

Thermal Resistance

Typ.

Max.

Parameter

Units

Junction-to-Case

R_θJC

R_θJA

–––

Junction-to-Ambient

Junction-to-Ambient (t<10s)

°C/W

–––

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 1.904mH, R_G= 50Ω, I_AS= -9A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R_θis measured at T_Jof approximately 90°C.

For DESIGN AID ONLY, not subject to production testing.

Current limited by package.

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December 16, 2013

IRFHM9331PbF

1000

100

1000

100

VGS

-10V

VGS

-10V

60μs

Tj = 150°C

PULSE WIDTH

≤

TOP

-5.0V

-4.5V

-3.5V

-3.3V

-3.1V

-2.9V

-2.7V

-5.0V

-4.5V

-3.5V

-3.3V

-3.1V

-2.9V

-2.7V

BOTTOM

-2.7V

60μs

Tj = 25°C

PULSE WIDTH

≤

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

1000

= -11A

= -10V

100

= 150°C

= 25°C

= -15V

≤60μs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120 140160

1.5

2.5

3.5 4.5

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

10000

1000

100

= 0V,

= C

f = 1 KHZ

I = -9A

= -24V

= -15V

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

VDS= -6V

iss

oss

rss

10 15 20 25 30 35 40 45

100

Q , Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFHM9331PbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100μsec

1msec

= 150°C

10msec

= 25°C

0.1

0.01

= 25°C

Tj = 150°C

Single Pulse

= 0V

1.0

0.4

0.6

0.8

1.0

1.2

100

-V , Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

2.5

2.0

1.5

1.0

0.5

= -25uA

-75 -50 -25

25 50 75 100 125 150

100

125

150

T , Temperature ( °C )

, Ambient Temperature (°C)

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs.

AmbientTemperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

1000

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFHM9331PbF

100

= -11A

= 125°C

Vgs = -4.5V

Vgs = -10V

= 25°C

100

-I , Drain Current (A)

-V

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

350

1000

-1.9A

-2.9A

300

TOP

800

600

400

200

250

200

150

100

BOTTOM -9.0A

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

100

125

150

Time (sec)

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

P.W.

Period

D =

D.U.T *

P.W.

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^®Power MOSFETs

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IRFHM9331PbF

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

D.U.T

-V_GS

DRIVER

-20V

0.01

(BR)DSS

15V

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

R_D

d(on)

d(off)

V_DS

10%

V_GS

D.U.T.

R_G

V_DD

90%

-V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRFHM9331PbF

PQFN Package Details

PQFN Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

XYWWX

XXXXX

ASSEMBLY SITE CODE

(Per SCOP 200-002)

MARKING CODE

(Per Marking Spec.)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min. last 4 digits of EATI #)

(Prod Mode - 4 digits SPN code)

TOP MARKING (LASER)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

December 16, 2013

IRFHM9331PbF

PQFN Tape and Reel

Qualification information^†

Cons umer^††

(per JEDEC JESD47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

PQFN 3mm x 3mm

(per IPC/JEDEC J-S T D-020D^†††

Yes

)

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comments

• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)

12/16/2013

•

Updated data sheet with new IR corporate template

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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December 16, 2013

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFHM9331 [INFINEON]

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