IRFHM9331TRPBF [INFINEON]
Low Thermal Resistance to PCB (<6.0°C/W); 低热阻的PCB ( \u003c 6.0A ° C / W)型号: | IRFHM9331TRPBF |
厂家: | Infineon |
描述: | Low Thermal Resistance to PCB (<6.0°C/W) |
文件: | 总8页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 96313
IRFHM9331PbF
HEXFET® Power MOSFET
VDS
-30
14.6
32
V
S
S
G
5 D
6 D
7 D
8 D
4
3
2
1
D
RDS(on) max
(@VGS = -10V)
S
m
Ω
D
S
S
S
G
D
Qg (typical)
nC
A
D
ID
-11
3mm x 3mm PQFN
(@TA = 25°C)
Applications
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (<6.0°C/W)
Enable better thermal dissipation
Compatible with Existing Surface Mount Techniques
results in Easier Manufacturing
⇒
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Quantity
IRFHM9331TRPBF
PQFN 3mm x 3mm
Tape and Reel
4000
Absolute Maximum Ratings
Parameter
Max.
-30
± 25
-11
-9
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-24
-24
-90
2.8
1.8
A
Power Dissipation
PD @TA = 25°C
PD @ TA = 70°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.02
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 2
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1
06/30/10
IRFHM9331PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -20V, ID = -11A
Parameter
Drain-to-Source Breakdown Voltage
Min.
Typ.
–––
0.02
10.0
11.7
-1.8
-5.1
–––
–––
–––
–––
–––
16
Max.
–––
–––
–––
14.6
-2.4
–––
-1.0
-150
-10
Units
V
BVDSS
∆Β
RDS(on)
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
16
∆
VDSS/ TJ
Breakdown Voltage Temp. Coefficient
V/°C
Static Drain-to-Source On-Resistance
Ω
m
VGS = -10V, ID = -11A
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = -25µA
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = -24V, VGS = 0V
IDSS
µA
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -25V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
µA
VGS = 25V
10
VDS = -10V, ID = -9.0A
VDS = -15V,VGS = -4.5V,ID = - 9.0A
VGS = -10V
gfs
Qg
–––
–––
48
S
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
32
VDS = -15V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
4.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = -9.0A
8
16
Ω
VDD = -15V, VGS = -4.5V
Turn-On Delay Time
Rise Time
11
ID = -1.0A
27
ns
pF
Ω
td(off)
tf
RG = 6.8
Turn-Off Delay Time
Fall Time
72
See Figs. 19a & 19b
VGS = 0V
60
Ciss
Coss
Crss
Input Capacitance
1543
310
208
VDS = -25V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0KHz
Avalanche Characteristics
Typ.
–––
–––
Max.
76
Parameter
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
-9.0
A
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
IS
MOSFET symbol
D
Continuous Source Current
–––
–––
-2.8
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-90
S
VSD
trr
T = 25°C, I = -2.8A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
64
-1.2
96
V
J
S
GS
T = 25°C, I = -2.8A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/µs
25
38
Thermal Resistance
Typ.
Max.
6
Parameter
Units
Junction-to-Case
RθJC
RθJA
RθJA
–––
Junction-to-Ambient
Junction-to-Ambient (t<10s)
45
°C/W
–––
30
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
Current limited by package.
.
2
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IRFHM9331PbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
60µs
Tj = 150°C
PULSE WIDTH
≤
TOP
TOP
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
BOTTOM
BOTTOM
-2.7V
1
-2.7V
60µs
Tj = 25°C
PULSE WIDTH
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= -11A
D
V
= -10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
= -15V
J
V
DS
≤60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140160
1.5
2
2.5
3
3.5 4.5
4
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14
10000
1000
100
V
= 0V,
= C
f = 1 KHZ
GS
I
= -9A
D
V
V
= -24V
= -15V
C
C
C
+ C , C
SHORTED
DS
DS
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
VDS= -6V
ds
gd
C
iss
6
C
oss
4
C
rss
2
0
0
5
10 15 20 25 30 35 40 45
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFHM9331PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
100
T
= 150°C
10msec
1
T
= 25°C
J
J
10
DC
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.4
0.6
0.8
1.0
1.2
0
1
10
100
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
12
10
8
2.0
1.5
1.0
0.5
6
I
= -25uA
D
4
2
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRFHM9331PbF
30
25
20
15
10
5
100
80
60
40
20
0
I
= -11A
D
T
T
= 125°C
J
J
Vgs = -4.5V
Vgs = -10V
= 25°C
15
0
5
10
20
25
0
20
40
60
80
100
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
350
1000
I
D
-1.9A
-2.9A
300
TOP
800
600
400
200
0
250
200
150
100
50
BOTTOM -9.0A
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRFHM9331PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRFHM9331PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHM9331PbF
PQFN Tape and Reel
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3mm x 3mm
(per IPC/JEDEC J-S T D-020D†††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2010
8
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