IRFHM9391PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM9391PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM9391TRPbF
HEXFET® Power MOSFET
VDSS
-30
V
4
3
2
1
G
S
S
S
5
6
7
8
D
D
D
D
RDS(on) max
(@ VGS = -10V)
14.6
m
(@ VGS = -4.5V)
22.5
32
Qg (typical)
nC
A
ID
-11
(@TA = 25°C)
Applications
System/load switch,
Charge or discharge switch for battery protection
Features
Benefits
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.05 mm)
Enable better Thermal Dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFHM9391PbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM9391TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 25
Units
VGS
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-11
-9.0
-90
A
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
-38
-24
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Power Dissipation
-24
PD @TA = 25°C
2.6
33
W
PD @TC(Bottom) = 25°C
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.021
W/°C
°C
TJ
-55 to + 150
TSTG
Notes through are on page 9
1
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July 01, 2014
IRFHM9391TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
-30
Typ.
–––
0.02
10
11.7
18
-1.8
-5.1
–––
–––
–––
–––
–––
16
Max. Units
Conditions
VGS = 0V, ID = -250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
–––
–––
–––
14.6
22.5
-2.4
V
–––
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, ID = -1mA
BVDSS/TJ
VGS = -20V, ID = -11A
GS = -10V, ID = -11A
GS = -4.5V, ID = -11A
m
V
V
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = -25µA
VDS = -24V, VGS = 0V
Gate Threshold Voltage Coefficient
––– mV/°C
VGS(th)
-1.0
µA
IDSS
Drain-to-Source Leakage Current
-150
V
V
V
V
DS = -24V, VGS = 0V,TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-10
10
µA
GS = -25V
GS = 25V
IGSS
gfs
Qg
–––
–––
48
S
DS = -10V, ID = -9.0A
nC VGS = -4.5V, VDS =-15V, ID = -9.0A
Qg
Total Gate Charge
32
V
V
DS = -15V
GS = -10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.0
1.4
8.0
19.6
9.4
9.0
16
11
27
72
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = -9.0A
nC VDS = -16V, VGS = 0V
VDD = -15V, VGS = -4.5V
ns ID = -1.0A
RG=6.8
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1543
310
208
VGS = 0V
VDS = -25V
ƒ = 1.0KHz
pF
Avalanche Characteristics
Parameter
Typ.
–––
Max.
Units
EAS
Single Pulse Avalanche Energy
75
mJ
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max. Units
-2.8
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
A
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
-90
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
64
25
-1.2
96
38
V
TJ = 25°C, IS = -2.8A, VGS = 0V
ns TJ = 25°C, IF = -2.8A, VDD = -24V
nC
di/dt = 100A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
–––
–––
–––
3.8
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
42
47
32
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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July 01, 2014
IRFHM9391TRPbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
60µs
Tj = 150°C
PULSE WIDTH
TOP
TOP
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
BOTTOM
BOTTOM
-2.7V
1
-2.7V
60µs
Tj = 25°C
PULSE WIDTH
0.1
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.6
I
= -11A
D
V
= -10V
GS
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T
= 25°C
= -15V
J
1
V
DS
60µs PULSE WIDTH
0.1
1.5
2
2.5
3
3.5 4.5
4
5
5.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14
V
= 0V,
= C
f = 1 KHZ
GS
I
= -9A
D
C
C
C
+ C , C
SHORTED
V
V
= -24V
= -15V
iss
gs
gd
ds
DS
DS
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
VDS= -6V
C
iss
1000
6
C
oss
4
C
rss
2
100
0
1
10
100
0
5
10 15 20 25 30 35 40 45
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFHM9391TRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
10msec
DC
1
T
= 150°C
T
= 25°C
J
J
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.5
12
10
8
2.0
1.5
6
I
= -25uA
D
4
1.0
0.5
2
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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4
July 01, 2014
IRFHM9391TRPbF
30
25
20
15
10
5
350
300
250
200
150
100
50
I
= -11A
I
D
D
TOP
-3.2A
-4.5A
BOTTOM -9.0A
T
T
= 125°C
J
J
= 25°C
0
0
5
10
15
20
25
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
-V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.01
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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IRFHM9391TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
6
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July 01, 2014
IRFHM9391TRPbF
PQFN 3.3 x 3.3 Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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July 01, 2014
IRFHM9391TRPbF
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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July 01, 2014
IRFHM9391TRPbF
Qualification Information†
Qualification Level
Consumer††
(per JEDEC JESD47F guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Starting TJ = 25°C, L = 1.872mH, RG = 50, IAS = -9A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited by source bonding technology.
Revision History
Date
Comments
Remove “SAWN” package outline on page 7.
Updated part marking on page 7.
Updated tape and reel on page 8.
7/1/14
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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July 01, 2014
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