IRFHM9331PBF [INFINEON]
Compatible with Existing Surface Mount Techniques;型号: | IRFHM9331PBF |
厂家: | Infineon |
描述: | Compatible with Existing Surface Mount Techniques |
文件: | 总8页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFHM9331PbF
HEXFET® Power MOSFET
VDS
-30
14.6
32
V
S
S
G
S
5 D
6 D
7 D
8 D
4
3
2
1
D
RDS(on) max
(@VGS = -10V)
S
m
Ω
D
G
D
S
Qg (typical)
nC
A
D
S
ID
-11
3mm x 3mm PQFN
(@TA = 25°C)
Applications
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (<6.0°C/W)
Enable better thermal dissipation
Compatible with Existing Surface Mount Techniques
results in Easier Manufacturing
⇒
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Standard Pack
Form
Orderable part number
Package Type
Note
Quantity
IRFHM9331TRPbF
IRFHM9331TR2PbF
PQFN 3mm x 3mm
PQFN 3mm x 3mm
Tape and Reel
Tape and Reel
4000
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
-30
± 25
-11
-9
Units
VDS
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-24
-24
-90
2.8
1.8
A
Power Dissipation
PD @TA = 25°C
PD @ TA = 70°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.02
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 2
www.irf.com © 2013 International Rectifier
1
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -20V, ID = -11A
Parameter
Drain-to-Source Breakdown Voltage
Min.
Typ.
–––
0.02
10.0
11.7
-1.8
-5.1
–––
–––
–––
–––
–––
16
Max.
–––
–––
–––
14.6
-2.4
–––
-1.0
-150
-10
Units
V
BVDSS
ΔΒ
RDS(on)
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
16
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient
V/°C
Static Drain-to-Source On-Resistance
Ω
m
VGS = -10V, ID = -11A
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = -25μA
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = -24V, VGS = 0V
IDSS
μA
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -25V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
μA
VGS = 25V
10
VDS = -10V, ID = -9.0A
VDS = -15V,VGS = -4.5V,ID = - 9.0A
VGS = -10V
gfs
Qg
–––
–––
48
S
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
32
VDS = -15V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
4.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = -9.0A
8
16
Ω
VDD = -15V, VGS = -4.5V
Turn-On Delay Time
Rise Time
11
ID = -1.0A
27
ns
pF
Ω
td(off)
tf
RG = 6.8
Turn-Off Delay Time
Fall Time
72
See Figs. 19a & 19b
VGS = 0V
60
Ciss
Coss
Crss
Input Capacitance
1543
310
208
VDS = -25V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0KHz
Avalanche Characteristics
Typ.
–––
–––
Max.
76
Parameter
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
-9.0
A
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
IS
MOSFET symbol
D
Continuous Source Current
–––
–––
-2.8
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-90
S
VSD
trr
T = 25°C, I = -2.8A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
64
-1.2
96
V
J
S
GS
T = 25°C, I = -2.8A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/μs
25
38
Thermal Resistance
Typ.
Max.
6
Parameter
Units
Junction-to-Case
RθJC
RθJA
RθJA
–––
Junction-to-Ambient
Junction-to-Ambient (t<10s)
45
°C/W
–––
30
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
Current limited by package.
.
2
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
60μs
Tj = 150°C
PULSE WIDTH
≤
TOP
TOP
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
BOTTOM
BOTTOM
-2.7V
1
-2.7V
60μs
Tj = 25°C
PULSE WIDTH
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= -11A
D
V
= -10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
= -15V
J
V
DS
≤60μs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140160
1.5
2
2.5
3
3.5 4.5
4
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14
10000
1000
100
V
= 0V,
= C
f = 1 KHZ
GS
I = -9A
D
V
V
= -24V
= -15V
C
C
C
+ C , C
SHORTED
DS
DS
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
VDS= -6V
ds
gd
C
iss
6
C
oss
4
C
rss
2
0
0
5
10 15 20 25 30 35 40 45
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 150°C
10msec
1
T
= 25°C
J
J
DC
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.4
0.6
0.8
1.0
1.2
0
1
10
100
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
12
10
8
2.0
1.5
1.0
0.5
6
I
= -25uA
D
4
2
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
30
25
20
15
10
5
100
80
60
40
20
0
I
= -11A
D
T
T
= 125°C
J
J
Vgs = -4.5V
Vgs = -10V
= 25°C
15
0
5
10
20
25
0
20
40
60
80
100
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
350
1000
I
D
-1.9A
-2.9A
300
TOP
800
600
400
200
0
250
200
150
100
50
BOTTOM -9.0A
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
t
t
r
t
t
f
RD
d(on)
d(off)
VDS
V
GS
10%
VGS
D.U.T.
RG
-
VDD
+
90%
-VGS
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
www.irf.com © 2013 International Rectifier
Fig 19b. Switching Time Waveforms
6
Submit Datasheet Feedback
December 16, 2013
IRFHM9331PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
7
December 16, 2013
IRFHM9331PbF
PQFN Tape and Reel
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3mm x 3mm
(per IPC/JEDEC J-S T D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
12/16/2013
•
Updated data sheet with new IR corporate template
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
相关型号:
IRFHM9331TR2PBF
Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFHM9391TRPBF
Power Field-Effect Transistor, 11A I(D), 30V, 0.0225ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
INFINEON
IRFHP8321PBF
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone 1 310 726 8000
INFINEON
IRFHP8321TR2PBF
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone 1 310 726 8000
INFINEON
IRFHP8321TRPBF
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone 1 310 726 8000
INFINEON
IRFHP8334TR2PBF
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone 1 310 726 8000
INFINEON
IRFHP8334TRPBF
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone 1 310 726 8000
INFINEON
©2020 ICPDF网 联系我们和版权申明