IRFH9310 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFH9310
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IRFH9310PbF

HEXFET^®Power MOSFET

V_DS

-30

4.6

6 mm

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

Ω

110

2.8

R_{G (typical)}

Ω

I_D

PQFN

5mm x 6mm

-21

(@T_A= 25°C)

Applications

• Charge and Discharge Switch for Notebook PC Battery Application

FeaturesandBenefits

Resulting Benefits

Features

Low R_DSon(≤ 4.6mΩ)

Lower Conduction Losses

results in

Industry-Standard PQFN Package

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Multi-Vendor Compatibility

Environmentally Friendlier

⇒

Orderable part number

Package Type

Standard Pack

Note

Form

Quantity

IRFH9310TRPBF

PQFN 5mm x 6mm

Tape and Reel

4000

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

-30

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ -10V

-21

-17

-107

- 86

-40

Continuous Drain Current, V_GS@ -10V (Silicon Limited)

Continuous Drain Current, V_GS@ -10V (Package Limited)

Pulsed Drain Current

-170

3.1

P_D@T_A= 25°C

P_D@ T_A= 70°C

Power Dissipation

2.0

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.025

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through are on page 2

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IRFH9310PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= -250µA

Parameter

Drain-to-Source Breakdown Voltage

Min.

Typ.

–––

0.020

3.7

Max.

–––

4.6

Units

BV_DSS

∆Β

-30

–––

-1.3

–––

Reference to 25°C, I_D= -1mA

V_GS= -10V, I_D= -21A

∆

V_DSS/ T_J

Breakdown Voltage Temp. Coefficient

V/°C

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS= -4.5V, I_D= -17A

5.7

7.1

V_GS(th)

Gate Threshold Voltage

-1.9

-5.8

–––

-2.4

–––

-1.0

-150

-100

100

–––

165

–––

V_DS= V_GS, I_D= -100µA

∆

V_GS(th)

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

mV/°C

V_DS= -24V, V_GS= 0V

I_DSS

µA

_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= 20V

V_DS= -10V, I_D= -17A

V_DS= -15V,V_GS= -4.5V,I_D= - 17A

V_GS= -10V

gfs

Q_g

–––

Q_g

Total Gate Charge

110

V_DS= -15V

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

I_D= -17A

2.8

Ω

_DD= -15V, V_GS= -4.5V

Turn-On Delay Time

Rise Time

I_D= -1.0A

Ω

t_d(off)

t_f

R_G= 1.8

Turn-Off Delay Time

Fall Time

See Figs. 19a & 19b

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

5250

1300

880

V_DS= -15V

Output Capacitance

Reverse Transfer Capacitance

ƒ = 1.0MHz

Avalanche Characteristics

Typ.

–––

Max.

170

-17

Parameter

Units

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

Diode Characteristics

Conditions

Parameter

Min.

Typ.

Max.

Units

I_S

MOSFET symbol

Continuous Source Current

–––

-3.1

showing the

(Body Diode)

I_SM

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

-170

V_SD

t_rr

T = 25°C, I = -3.1A, V = 0V

Diode Forward Voltage

–––

-1.2

T = 25°C, I = -3.1A, V_DD= -24V

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

di/dt = 100/µs

Thermal Resistance

Typ.

Max.

1.6

Parameter

Units

Junction-to-Case

R_θJC

R_θJA

–––

Junction-to-Ambient

Junction-to-Ambient (t<10s)

°C/W

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 1.1mH, R_G= 50Ω, I_AS= -17A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R_θis measured at T_Jof approximately 90°C.

For DESIGN AID ONLY, not subject to production testing.

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IRFH9310PbF

1000

100

1000

100

VGS

-10V

VGS

-10V

TOP

-5.0V

-4.5V

-3.5V

-3.3V

-3.1V

-2.9V

-2.7V

-5.0V

-4.5V

-3.5V

-3.3V

-3.1V

-2.9V

-2.7V

BOTTOM

-2.7V

2.7V

60µs PULSE WIDTH

Tj = 150°C

≤

60µs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

1.6

= -21A

= -10V

1.4

1.2

1.0

0.8

0.6

100

= 25°C

= 150°C

= -15V

≤

60µs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

12.0

100000

10000

1000

= 0V,

= C

f = 1 MHZ

I = -17A

+ C , C

SHORTED

iss

= C

10.0

rss

oss

= C + C

= -24V

= -15V

8.0

6.0

4.0

2.0

0.0

VDS = -6.0V

iss

oss

rss

100

-V , Drain-to-Source Voltage (V)

100

125

Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFH9310PbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

100µsec

1msec

= 150°C

10msec

= 25°C

Tj = 150°C

Single Pulse

= 0V

1.0

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

100

-V , Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

2.2

2.0

1.8

1.6

1.4

1.2

1.0

= -100µA

-75 -50 -25

25 50 75 100 125 150

100

125

150

T , Temperature ( °C )

, Ambient Temperature (°C)

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs.

AmbientTemperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFH9310PbF

= -21A

Vgs = -4.5V

= 125°C

Vgs = -10V

= 25°C

10 12 14 16 18 20

100

120

-I , Drain Current (A)

-V

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

50000

800

TOP

-2.0A

-3.1A

40000

30000

20000

10000

600

400

200

BOTTOM -17A

1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1

100

125

150

Time (sec)

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

P.W.

Period

D =

D.U.T *

Period

P.W.

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^®Power MOSFETs

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IRFH9310PbF

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

D.U.T

-V_GS

DRIVER

-20V

0.01

Ω

(BR)DSS

15V

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

R_D

V_DS

d(on)

d(off)

V_GS

D.U.T.

10%

R_G

V_DD

-V_GS

90%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRFH9310PbF

PQFN Package Details

PQFN Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

XYWWX

XXXXX

ASSEMBLY SITE CODE

(Per SCOP 200-002)

MARKING CODE

(Per Marking Spec.)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min. last 4 digits of EATI #)

(Prod Mode - 4 digits SPN code)

TOP MARKING (LASER)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

August26, 2014

IRFH9310PbF

PQFN Tape and Reel

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRFH9310PbF

Qualification Information^†

Consumer ^††

(per JEDEC JESD47F^†††guidelines)

MSL2

(per JEDEC J-STD-020D^†††

Qualification level

Moisture Sensitivity Level

RoHS Compliant

PQFN 5mm x 6mm

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Higher MSL ratings may be available for the specific package types listed here. Please contact your

International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/

Revision History

Date

Comments

Updated datasheet as per new IR Corporate Template

•

8/19/2014

Updated data sheet with latest PQFN Tape and Reel Diagram.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFH9310 [INFINEON]

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