IRFHE4250DPBF_15 [INFINEON]
Low thermal resistance path to the PCB;
| 型号： | IRFHE4250DPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Low thermal resistance path to the PCB PC |
| 文件： | 总12页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FASTIRFET™
IRFHE4250DPbF
HEXFET® Power MOSFET
Q1
25
Q2
25
VDSS
V
RDS(on) max
(@VGS = 4.5V)
4.10
13
1.35
35
m
nC
Qg (typical)
ID
60
60
A
(@TC = 25°C)
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 6X6 mm
Benefits
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
Increased power density
Increased power density
Increased power density
Lower switching losses
Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
results in
MSL2, industrial qualification
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFHE4250DTRPbF
Form
Quantity
4000
IRFHE4250DPbF
Dual PQFN 6mm x 6mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Q1 Max.
Q2 Max.
Units
VGS
± 16
V
A
ID @ TC = 25°C
86
69
303
243
ID @ TC = 70°C
ID @ TC = 25°C
Continuous Drain Current
(Source Bonding Technology Limited)
60
60
IDM
Pulsed Drain Current
Power Dissipation
Power Dissipation
180
156
100
525
156
PD @TC = 25°C
PD @TC = 70°C
W
100
Linear Derating Factor
1.3
1.3
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
-55 to + 150
TSTG
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
Junction-to-Case
3.7
0.91
24
0.91
2.1
24
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
17
17
RJA (<10s)
Notes through are on page 12
1
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
––– –––
––– –––
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Breakdown Voltage Temp. Coefficient
–––
–––
23
21
––– mV/°C Reference to 25°C, ID = 1.0mA
BVDSS/TJ
–––
Reference to 25°C, ID = 10mA
––– 2.20 2.75
––– 0.70 0.90
––– 3.20 4.10
––– 1.00 1.35
VGS = 10V, ID = 27A
RDS(on)
Static Drain-to-Source On-Resistance
V
GS = 10V, ID = 27A
VGS = 4.5V, ID = 27A
GS = 4.5V, ID = 27A
m
V
VGS(th)
Gate Threshold Voltage
1.1
1.1
1.6
1.6
2.1
2.1
V
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -5.8 ––– mV/°C Q1: VDS = VGS, ID = 35µA
VGS(th)/TJ
IDSS
IGSS
gfs
––– -7.8 –––
––– ––– 1.0
––– ––– 500
Q2: VDS = VGS, ID = 1.0mA
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
nA VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Q1/Q2 ––– ––– 100
Q1/Q2 ––– ––– -100
VGS = -16V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
73
––– –––
S
VDS = 10V, ID = 14A
121 ––– –––
VDS = 10V, ID = 23A
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
35
20
53
Q1
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.6 –––
8.6 –––
1.3 –––
3.8 –––
5.2 –––
VDS = 13V
VGS = 4.5V, ID = 13A
nC
Q2
VDS = 13V
13
–––
VGS = 4.5V, ID = 23A
Qgodr
Qsw
Qoss
RG
2.9 –––
9.6 –––
6.5 –––
––– 16.8 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
41
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
0.5 –––
0.4 –––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
17
33
54
14
24
12
16
–––
–––
–––
–––
–––
–––
–––
–––
Q1
VDS = 13V VGS = 4.5V
ID = 14A, Rg = 1.8
ns
Q2
Turn-Off Delay Time
Fall Time
VDS = 13V VGS = 4.5V
ID = 23A, Rg = 1.8
Ciss
Input Capacitance
––– 1735 –––
––– 4765 –––
––– 493 –––
––– 1577 –––
––– 137 –––
––– 370 –––
VGS = 0V
pF
VDS = 13V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
2
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Q1 Max.
71
Q2 Max.
481
63
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
32
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
––– ––– 60
––– ––– 60
––– ––– 180
––– ––– 525
––– 0.77 0.88
––– 0.60 0.75
A
A
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
VSD
trr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 25°C, IS = 27A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
34
16
54
29
51
24
81
ns Q1 TJ = 25°C, IF = 30A
VDD = 13V, di/dt = 200A/µs
nC Q2 TJ = 25°C, IF = 30A
Qrr
VDD = 13V, di/dt = 200A/µs
3
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
2.5V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
BOTTOM
BOTTOM
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 25°C
2.75V
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.75V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 150°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
1000
100
10
100
10
1
T
= 150°C
T
= 150°C
J
J
T
= 25°C
= 15V
J
T
= 25°C
J
1
V
= 15V
V
DS
DS
60µs PULSE WIDTH
60µs PULSE WIDTH
0.1
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.0
1.5
2.0
2.5 3.0 3.5 4.0
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
September 26, 2013
Fig 5. Typical Transfer Characteristics
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4
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
10000
1000
100
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
V
= 0V,
= C
f = 1 MHZ
+ C , C SHORTED
GS
GS
C
C
C
+ C , C
SHORTED
C
C
C
iss
gs
gd
gd
ds
iss
gs
gd
ds
= C
= C
rss
oss
gd
= C + C
rss
oss
gd
= C + C
ds
ds
gd
C
C
iss
C
iss
oss
C
oss
C
C
rss
rss
100
1
10
, Drain-to-Source Voltage (V)
100
1
10
, Drain-to-Source Voltage (V)
100
V
DS
V
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
14.0
I
= 30A
I = 30A
D
D
12.0
10.0
8.0
12.0
10.0
8.0
V
V
= 20V
= 13V
DS
DS
V
V
= 20V
= 13V
DS
DS
6.0
6.0
4.0
4.0
2.0
2.0
0.0
0.0
0
5
10 15 20 25 30 35 40
Q , Total Gate Charge (nC)
0
10 20 30 40 50 60 70 80 90 100
Q , Total Gate Charge (nC)
G
G
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R (on)
OPERATION IN THIS AREA
DS
LIMITED BY R
(on)
DS
1000
100
10
100µsec
100
10
1
1msec
100µsec
1msec
Limited by
package
Limited by package
10msec
10msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.1
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
5
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September 26, 2013
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.6
1.4
1.2
1.0
0.8
0.6
I
= 27A
I
= 27A
D
D
V
= 4.5V
V
= 4.5V
GS
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
1000
Fig 13. Normalized On-Resistance vs. Temperature
1000
T
= 150°C
J
100
10
100
T
= 150°C
J
T
= 25°C
J
T
V
= 25°C
= 0V
J
10
V
= 0V
GS
GS
1.0
1.0
0.2
0.4
0.6
0.8
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, Source-to-Drain Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
SD
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
10
3.0
I
= 23A
I
= 27A
D
D
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
T
= 125°C
J
T
= 125°C
J
T
= 25°C
J
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
V
Gate -to -Source Voltage (V)
V
Gate -to -Source Voltage (V)
GS,
GS,
Fig 17. Typical On-Resistance vs. Gate Voltage
Fig 18. Typical On-Resistance vs. Gate Voltage
September 26, 2013
6
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© 2013 International Rectifier
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
350
300
250
200
150
100
50
100
80
60
40
20
0
Limited By Package
Limited By Package
0
25
50
T
75
100
125
150
25
50
T
75
100
125
150
, Case Temperature (°C)
, Case Temperature (°C)
C
C
Fig 20. Maximum Drain Current vs. Case Temperature
Fig 19. Maximum Drain Current vs. Case Temperature
2.5
2.2
2.0
1.8
1.6
2.0
1.5
I
= 1.0mA
D
I
= 35µA
D
1.4
1.2
1.0
0.8
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150
-75 -50 -25
0
25 50 75 100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
300
2000
I
I
D
D
TOP
8.6A
15A
TOP
18A
33A
250
200
150
100
50
1500
1000
500
0
BOTTOM 32A
BOTTOM 63A
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Starting T , Junction Temperature (°C)
J
J
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
7
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 27. Single Avalanche Event: Pulse Current vs. Pulse Width (Q1)
8
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 28. Single Avalanche Event: Pulse Current vs. Pulse Width (Q2)
9
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September 26, 2013
IRFHE4250DPbF
Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 30a. Unclamped Inductive Test Circuit
Fig 30b. Unclamped Inductive Waveforms
Fig 31a. Switching Time Test Circuit
Fig 31b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 32a. Gate Charge Test Circuit
Fig 32b. Gate Charge Waveform
September 26, 2013
10
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© 2013 International Rectifier
IRFHE4250DPbF
Dual PQFN 6x6 Outline Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Dual PQFN 6x6 Outline Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification level
(per JEDEC JESD47F †† guidelines )
MSL2
DUAL PQFN 6mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C,
Q1: L = 0.14 mH, RG = 50, IAS = 32A;
Q2: L = 0.24 mH, RG = 50, IAS = 63A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to Q1 = 60A & Q2 = 60A by source bonding technology.
Pulsed drain current is limited to 240A by source bonding technology.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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September 26, 2013
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