IRFHM3911PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM3911PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：631K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM3911TRPbF
HEXFET® Power MOSFET
VDSS
100
115
17
V
RDS(on) max
G
m
nC
S
S
(@VGS = 10V)
Qg (typical)
ID
S
D
D
D
D
D
11
A
(@TC (Bottom) = 25°C)
Applications
POE+ Power Sourcing Equipment Switch
Features
Benefits
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFHM3911PbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM3911TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
3.2
Units
VGS
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
11
6.6
A
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
ID @ TC = 25°C
20
IDM
36
2.8
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
Power Dissipation
W
29
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.023
W/°C
°C
TJ
-55 to + 150
TSTG
Notes through are on page 9
1
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IRFHM3911TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
111
92
–––
-7.6
–––
–––
–––
–––
–––
17
2.5
1.4
5.4
7.7
6.8
5.9
3.8
5.0
5.8
16
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
BVDSS/TJ
RDS(on)
VGS(th)
115
4.0
VGS = 10V, ID = 6.3A
VDS = VGS, ID = 35µA
m
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VGS(th)
IDSS
20
250
100
-100
–––
26
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ=125°C
nA VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
GS = -20V
gfs
Qg
S
DS = 25V, ID = 6.3A
V
V
DS = 50V
GS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 6.3A
nC VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ns ID = 6.3A
RG=1.8
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.1
760
73
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 50V
ƒ = 1.0MHz
13
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
41
6.3
EAS
IAR
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
–––
–––
11
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
36
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
47
381
1.3
71
571
V
TJ = 25°C, IS = 6.3A, VGS = 0V
ns TJ = 25°C, IF = 6.3A, VDD = 50V
nC
di/dt = 500A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
–––
–––
–––
4.3
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
40
45
31
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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IRFHM3911TRPbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
4.0V
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
I
= 6.5A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
V
= 50V
DS
60µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 6.3A
D
C
C
C
= C + C , C SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
ds
DS
DS
DS
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
ds
gd
1000
100
10
C
iss
C
oss
6.0
C
rss
4.0
2.0
0.0
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFHM3911TRPbF
100
10
1
100
10
T = 150°C
J
100µsec
10msec
1
1msec
T = 25°C
J
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
GS
0.1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
1000
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
12
4.5
4.0
3.5
3.0
10
8
6
I
= 35µA
= 250µA
= 1.0mA
= 1.0A
D
2.5
2.0
1.5
I
4
D
I
D
I
D
2
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFHM3911TRPbF
400
350
300
250
200
150
100
50
200
160
120
80
I
I
= 6.3A
D
D
TOP
1.4A
2.7A
BOTTOM 6.3A
T = 125°C
J
T = 25°C
J
40
0
4
8
12
16
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
100
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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IRFHM3911TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
6
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IRFHM3911TRPbF
PQFN 3.3 x 3.3 Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFHM3911TRPbF
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFHM3911TRPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.06mH, RG = 50, IAS = 6.3A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 20A by source bonding technology.
Revision History
Date
Comments
Updated schematic on page 1
Updated tape and reel on page 8
6/5/14
7/1/14
Remove “SAWN” package outline on page 7.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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July 1, 2014
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