IRFHM7194PBF [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM7194PBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFHM7194TRPbF
HEXFET® Power MOSFET
VDSS
100
V
RDS(on) max
(@ VGS = 10V)
16.4
m
Qg (typical)
Rg (typical)
13
nC
2.0
ID
34
A
(@TC (Bottom) = 25°C)
PQFN 3.3 x 3.3 mm
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
Features
Low RDSon (<16.4m)
Benefits
Lower Conduction Losses
Low Charge (typical 13nC)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<0.9 mm)
Low Switching Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFHM7194TRPbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM7194TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
9.3
34
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
21
95
IDM
Pulsed Drain Current
Power Dissipation
PD @TA = 25°C
PD @TC(Bottom) = 25°C
2.8
W
Power Dissipation
37
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.022
-55 to + 150
W/°C
TJ
°C
TSTG
Notes through are on page 8
1
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
48
13.7
––
-5.5
–––
–––
–––
–––
13
1.8
0.9
4.3
6.0
5.2
40
2.1
2.7
3.3
8.0
2.5
733
374
11
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
16.4
3.6
VGS = 10V, ID = 20A
VDS = VGS, ID = 50µA
m
V
––– mV/°C
1.0
100
-100
–––
19
µA VDS = 80V, VGS = 0V
VGS = 20V
nA
IGSS
V
V
GS = -20V
DS = 25V, ID = 20A
gfs
Qg
S
V
V
DS = 50V
GS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 20A
nC VDS = 50V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 50V, VGS = 10V
ID = 20A
ns
RG= 1.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
V
DS = 50V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS (Thermally limited)
IAR
Single Pulse Avalanche Energy
–––
220
mJ
Avalanche Current
–––
12
A
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
–––
–––
34
G
A
ISM
VSD
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
integral reverse
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
–––
–––
–––
0.8
95
S
1.3
V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
30
26
45
39
ns
TJ = 25°C, IF = 20A, VDD = 50V
nC di/dt = 100A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Case
–––
–––
–––
–––
3.4
RJC (Bottom)
RJC (Top)
RJA
35
45
29
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
0.1
1
10
, Drain-to-Source Voltage (V)
DS
100
V
, Drain-to-Source Voltage (V)
V
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.7
1.4
1.1
0.8
0.5
1000
100
10
I
= 20A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
1
2
3
4
5
6
T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
V
C
= 0V,
f = 1 MHZ
GS
I
= 20A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
12
10
8
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
C
C
oss
iss
6
C
4
rss
2
0
10
0
4
8
12
16
0.1
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
100µsec
T = 150°C
J
1
T = 25°C
J
1msec
1
0.1
0.01
10msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
4.0
36
32
28
24
20
16
12
8
3.5
3.0
I
= 50µA
= 250µA
= 1.0mA
= 1A
2.5
2.0
1.5
1.0
D
I
D
I
D
I
D
4
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
4
March 31, 2015
IRFHM7194TRPbF
60
50
40
30
20
10
0
1000
900
800
700
600
500
400
300
200
100
0
I
I
= 20A
D
D
TOP
2.4A
3.8A
BOTTOM 12A
T = 125°C
J
T = 25°C
J
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Current vs. pulse Width
5
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Submit Datasheet Feedback
Fig 18. Gate Charge Test Circuit
6
www.irf.com © 2015 International Rectifier
March 31, 2015
IRFHM7194TRPbF
PQFN 3.3 x 3.3 Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
IRFHM7194TRPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3mH, RG = 50, IAS = 12A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015
相关型号：
IRFHM8228TRPBF
Power Field-Effect Transistor, 19A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
INFINEON
©2020 ICPDF网 联系我们和版权申明