IRFHM8228PBF [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM8228PBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总10页 (文件大小：672K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM8228PbF
HEXFET® Power MOSFET
VDSS
25
V
V
VGS max
±20
RDS(on) max
(@ VGS = 10V)
5.2
G
m
S
S
S
(@ VGS = 4.5V)
8.7
D
Qg (typical)
9.0
nC
A
D
D
D
D
ID
25
(@TC (Bottom) = 25°C)
Applications
Control or synchronous MOSFET for synchronous buck converter
Features
Benefits
Low Thermal Resistance to PCB (<3.7°C/W)
Low Profile (<1.05 mm)
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFHM8228PbF
PQFN 3.3 mm x 3.3 mm
Tape and Reel
4000
IRFHM8228TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
19
Units
VGS
V
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
15
65
41
A
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
25
IDM
Pulsed Drain Current
Power Dissipation
260
2.8
PD @TA = 25°C
PD @TC(Bottom) = 25°C
W
Power Dissipation
34
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.023
W/°C
TJ
-55 to + 150
°C
TSTG
Notes through are on page 10
1
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IRFHM8228PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
Typ.
–––
18
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
–––
–––
–––
1.35
–––
–––
–––
–––
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.2
6.7
1.8
-6.6
–––
–––
–––
–––
–––
18
9.0
2.7
1.0
3.1
2.2
4.1
9.7
1.7
11
5.2
8.7
VGS = 10V, ID = 20A
GS = 4.5V, ID = 16A
m
V
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
2.35
V
VDS = VGS, ID = 25µA
––– mV/°C
1.0
150
100
-100
–––
–––
14
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS = -20V
VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 13V, ID = 20A
gfs
Qg
S
Qg
Total Gate Charge
V
V
DS = 13V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 20A
nC VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ns ID = 20A
RG=1.8
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
22
13
6.2
1667
456
195
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 10V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
50
Units
mJ
EAS
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
Continuous Source Current
(Body Diode)
––– ––– 25
A
––– ––– 260
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.0
V
ns
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 13V
––– 14
––– 10
21
15
nC di/dt = 260A/µs
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
3.7
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
°C/W
Junction-to-Case
41
Junction-to-Ambient
Junction-to-Ambient
–––
–––
44
29
RJA
RJA (<10s)
2
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IRFHM8228PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
BOTTOM
BOTTOM
1
0.1
0.01
2.5V
60µs PULSE WIDTH
Tj = 25°C
2.5V
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 10V
DS
60µs PULSE WIDTH
0.1
0
2
4
6
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
V
V
V
= 20V
= 13V
= 5.0V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
0
5
10
15
20
25
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFHM8228PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
Limited by source bonding
technology
1
T
= 25°C
J
1
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
70
Limited by source
60
bonding technology
2.5
2.0
50
40
30
20
10
0
I
I
I
I
= 25µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
1.5
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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June 30, 2014
IRFHM8228PbF
18
14
10
6
200
160
120
80
I
= 20A
I
D
D
TOP
4.4A
9.2A
BOTTOM 20A
T
= 125°C
J
40
T
= 25°C
J
2
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
5
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IRFHM8228PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
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IRFHM8228PbF
Placement and Layout Guidelines
The typical application topology for this product is the synchronous buck converter. These converters operate at high
frequencies (typically around 400 kHz). During turn-on and turn-off switching cycles, the high di/dt currents circulating in
the parasitic elements of the circuit induce high voltage ringing which may exceed the device rating and lead to
undesirable effects. One of the major contributors to the increase in parasitics is the PCB power circuit inductance.
This section introduces a simple guideline that mitigates the effect of these parasitics on the performance of the circuit
and provides reliable operation of the devices.
To reduce high frequency switching noise and the effects of Electromagnetic Interference (EMI) when the control
MOSFET (Q1) is turned on, the layout shown in Figure 19 is recommended. The input bypass capacitors, control
MOSFET and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the
amplitude of the switch node ringing, and minimizes exposure of the MOSFETs to repetitive avalanche conditions.
Fig 19. Placement and Layout Guidelines
7
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IRFHM8228PbF
PQFN 3.3mm x 3.3mm Outline Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3mm x 3.3mm Outline Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFHM8228PbF
PQFN 3.3mm x 3.3mm Outline Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFHM8228PbF
Qualification Information†
Qualification Level
Consumer††
(per JEDEC JESD47F††† guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier representative for further information: http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.25mH, RG = 50, IAS = 20A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994
for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 25A by source bonding technology.
Revision History
Date
Comments
Updated schematic on page 1.
Updated part marking on page 8.
Updated tape and reel on page 9.
6/5/14
6/30/14
Remove “SAWN” package outline on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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June 30, 2014
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