IRFHM830PBF [INFINEON]
Battery Operated DC Motor Inverter MOSFET; 电池供电的直流电动机逆变器MOSFET型号: | IRFHM830PBF |
厂家: | Infineon |
描述: | Battery Operated DC Motor Inverter MOSFET |
文件: | 总8页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97547A
IRFHM830PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
5
6
7
8
3.8
D
D
D
D
4
3
2
1
G
S
S
S
m
Ω
15
nC
RG (typical)
2.5
Ω
3.3mm x 3.3mm PQFN
ID
40
A
(@Tc(Bottom) = 25°C)
Applications
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (<3.8mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Low Profile (<1.0mm)
results in Increased Power Density
⇒
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1,Industrial Qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFHM830TRPBF
IRFHM830TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
30
Units
VDS
V
VGS
±20
21
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
17
40
A
40
160
2.7
37
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.022
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through ꢀ are on page 8
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1
09/09/2010
IRFHM830PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
∆Β
/ T
∆
J
DSS
RDS(on)
–––
–––
1.35
–––
–––
–––
–––
–––
52
3.0
4.8
3.8
6.0
VGS = 10V, ID = 20A
m
Ω
VGS = 4.5V, ID = 20A
VGS(th)
Gate Threshold Voltage
1.8
2.35
V
VDS = VGS, ID = 50µA
V
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.3
–––
–––
–––
––– mV/°C
GS(th)
IDSS
1.0
µA
VDS = 24V, VGS = 0V
150
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
––– -100
VGS = -20V
DS = 15V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
gfs
Qg
Qg
–––
31
–––
–––
23
S
V
–––
–––
–––
–––
–––
–––
–––
–––
Total Gate Charge
15
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
3.8
2.0
5.0
4.2
7.0
9.7
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 20A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
See Fig.17 & 18
Qsw
Qoss
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
2.5
12
25
13
9.2
–––
–––
–––
–––
–––
Ω
V
DD = 15V, VGS = 4.5V
ID = 20A
R =1.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
G
See Fig.15
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2155 –––
–––
–––
350
160
–––
–––
VDS = 25V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
82
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
20
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
–––
–––
–––
–––
40
showing the
integral reverse
A
G
ISM
Pulsed Source Current
(Body Diode)
160
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
17
1.0
26
35
V
TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/µs
nC
Qrr
ton
23
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
3.4
37
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
46
JA
RθJA (<10s)
31
2
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IRFHM830PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 150°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
I
= 20A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
V
= 24V
= 15V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
VDS= 6.0V
C
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFHM830PbF
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
100
T
= 150°C
1msec
J
10msec
T
= 25°C
J
DC
10
Tc = 25°C
Tj = 150°C
Single Pulse
V
GS
= 0V
1.0
1
1.0
0
1
10
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.1
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
3.0
80
70
Limited By Package
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
0
I
I
I
I
= 50µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T , Temperature ( °C )
, Case Temperature (°C)
C
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case(Bottom)Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFHM830PbF
12
10
8
400
300
200
100
0
I
I
= 20A
D
D
TOP
5.8A
11A
BOTTOM 20A
6
T
= 125°C
J
4
T
4
= 25°C
6
J
2
2
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFHM830PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFHM830PbF
PQFN 3.3x3.3 Outline Package Details
8
7
6
5
1
2
3
4
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3x3.3 Outline Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
::::
!;99!
:::::
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHM830PbF
PQFN 3.3x3.3 Outline Tape and Reel
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts.
DIMENSIONS
METRIC
IMPERIAL
REEL DIMENSIONS
CODE
MIN
MAX
8.10
4.10
12.30
5.55
3.70
3.70
0.35
1.30
MIN
MAX
0.319
0.161
0.484
0.219
0.146
0.146
0.014
0.051
STANDARD OPTION (QTY 4000)
A
B
C
D
E
F
7.90
3.90
11.70
5.45
3.50
3.50
0.25
1.10
0.311
0.154
0.461
0.215
0.138
0.138
0.010
0.043
METRIC
MAX
330.25 12.835 13.002
IMPERIAL
CODE
MIN
326.0
20.2
12.8
1.5
MIN MAX
A
B
C
D
E
F
20.45
13.50
2.5
0.795
0.504
0.059
0.805
0.531
0.098
102.0 REF
4.016 REF
G
H
17.8
12.4
18.3
12.9
0.701
0.488
0.720
0.508
G
Qualification Information†
Industrial††
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Qualification level
Moisture Sensitivity Level
RoHS Compliant
PQFN 3.3mm x 3.3mm
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.41mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by
production test capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
8
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