IRFHM831TR2PBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8;
| 型号： | IRFHM831TR2PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM831PbF
HEXFET® Power MOSFET
VDSS
30
V
RDS(on) max
(@ VGS = 10V)
7.8
m
Qg (typical)
Rg (typical)
7.3
0.5
nC
ID
40
A
(@TC (Bottom) = 25°C)
PQFN 3.3 x 3.3 mm
Applications
Control MOSFET for Buck Converters
Features
Benefits
Low Charge (typical 7.3nC)
Lower Switching Losses
Enable better thermal dissipation
Increased Reliability
Low Thermal Resistance to PCB (<4.7°C/W)
100% Rg tested
Low Profile (< 1.0 mm)
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4000
IRFHM831TRPbF
IRFHM831TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Tape and Reel
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
VGS
± 20
14
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
11
40
28
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
Power Dissipation
96
PD @TA = 25°C
PD @TC(Bottom) = 25°C
2.5
27
W
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
W/°C
TJ
-55 to + 150
°C
TSTG
Notes through are on page 9
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IRFHM831PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
0.02
6.6
10.7
1.8
-6.8
–––
–––
–––
–––
–––
16
7.3
1.7
0.9
2.5
2.2
3.4
5.1
0.5
6.9
12
–––
–––
7.8
12.6
2.35
––– mV/°C
1
150
V
–––
–––
–––
1.35
–––
–––
–––
–––
–––
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
m
BVDSS/TJ
RDS(on)
VGS = 4.5V, ID = 12A
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
V
DS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
VDS = 24V,VGS = 0V,TJ = 125°C
VGS = 20V
GS = -20V
DS = 15V, ID = 12A
µA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
V
V
gfs
Qg
–––
–––
11
S
VGS = 10V, VDS = 15V, ID = 12A
Qg
Total Gate Charge
V
V
DS = 15V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 12A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 15V, VGS = 4.5V
ID = 12A
ns
6.2
4.7
1050
190
80
RG= 1.8
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS (Thermally limited)
IAR
Single Pulse Avalanche Energy
–––
50
mJ
Avalanche Current
–––
12
A
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
–––
–––
40
G
A
ISM
VSD
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
integral reverse
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V
–––
–––
–––
–––
96
S
1.0
V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
15
16
22
24
ns
TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 300A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Case
–––
–––
–––
–––
4.7
RJC (Bottom)
RJC (Top)
RJA
44
50
32
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
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IRFHM831PbF
1000
100
10
1000
100
10
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
VGS
VGS
10V
TOP
10V
TOP
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
I
= 12A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14
V
= 0V,
= C
f = 1 MHZ
GS
I
= 12A
V
V
V
= 24V
= 15V
= 6.0V
D
C
C
C
+ C , C
SHORTED
DS
DS
DS
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
1000
100
10
6
4
2
0
0
5
10
15
20
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFHM831PbF
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
100µsec
J
10msec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.0
GS
0.1
0.1
0.2
0.4
0.6
0.8
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
50
LIMITED BY PACKAGE
2.5
2.0
40
30
20
10
0
I
I
I
I
= 1.0A
D
D
D
D
1.5
1.0
0.5
= 1.0mA
= 250µA
= 25µA
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T , Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFHM831PbF
40
35
30
25
20
15
10
5
200
160
120
80
I
I
= 12A
D
D
TOP
BOTTOM
3.1A
6.4A
12A
T
= 125°C
= 25°C
J
40
T
J
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
L
V
DS
D.U.T
R
+
-
G
V
DD
I
A
AS
I
20V
AS
0.01
t
p
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
5
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IRFHM831PbF
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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IRFHM831PbF
PQFN 3.3 x 3.3 Outline “B” Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
?YWW?
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
XXXXX
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
PIN 1
IDENTIFIER
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFHM831PbF
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFHM831PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.69mH, RG = 50, IAS = 12A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability.
9
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IRFHM831PbF
Revision History
Date
Comments
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
Updated package outline on page 7.
Updated Tape and Reel on page 8.
5/14/2014
Updated data sheet with new IR corporate template.
6/5/2014
Updated schematic on page1
Updated datasheet with corporate template
Removed package outline “Punched Version” on page 7.
2/26/2016
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
2016-2-26
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