IRFHM830DTRPBF [INFINEON]
Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8;
| 型号： | IRFHM830DTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM830DPbF
HEXFET® Power MOSFET
VDSS
30
V
RDS(on) max
(@ VGS = 10V)
4.3
m
Qg (typical)
Rg (typical)
13
nC
1.1
ID
40
A
(@TC (Bottom) = 25°C)
PQFN 3.3 x 3.3 mm
Applications
Synchronous MOSFET for Buck Converters
Features
Benefits
Low RDSon (< 4.3m)
Lower Conduction Losses
Low Switching Losses
Increased Power Density
Increased Reliability
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0 mm)
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4000
IRFHM830DTRPbF
IRFHM830DTR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Tape and Reel
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
VGS
± 20
20
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
16
40
40
160
2.7
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
Power Dissipation
PD @TA = 25°C
PD @TC(Bottom) = 25°C
W
Power Dissipation
37
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.022
W/°C
TJ
-55 to + 150
°C
TSTG
Notes through are on page 9
1
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September 25, 2015
IRFHM830DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
Typ. Max. Units
Conditions
VGS = 0V, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
0.02
3.4
5.7
1.8
-6.0
–––
–––
–––
–––
–––
27
–––
–––
4.3
7.1
2.35
V
–––
–––
–––
1.35
–––
–––
–––
–––
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, ID = 4mA
VGS = 10V, ID = 20A
m
BVDSS/TJ
RDS(on)
VGS = 4.5V, ID = 20A
VDS = VGS, ID = 50µA
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
––– mV/°C VDS = VGS, ID = 1mA
500
5.0
100
-100
–––
–––
20
µA VDS = 24V, VGS = 0V
mA VDS = 24V,VGS = 0V,TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = 20V
V
V
nA
GS = -20V
DS = 15V, ID = 20A
VGS = 10V, VDS = 15V, ID = 20A
gfs
Qg
S
Qg
Total Gate Charge
13
V
V
DS = 15V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
2.9
1.8
4.5
3.8
6.3
10
1.1
9.8
20
9.1
6.7
1797
363
148
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 20A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 15V, VGS = 4.5V
ID = 20A
ns
RG= 1.8
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS (Thermally limited)
IAR
Single Pulse Avalanche Energy
–––
82
mJ
Avalanche Current
–––
20
A
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
–––
–––
40
G
A
ISM
VSD
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
integral reverse
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
–––
–––
–––
–––
160
S
0.85
V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
16
17
24
26
ns
TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Case
–––
–––
–––
–––
3.4
RJC (Bottom)
RJC (Top)
RJA
37
46
31
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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IRFHM830DPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
60µs
60µs
Tj = 150°C
PULSE WIDTH
PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
= 15V
J
V
DS
60µs PULSE WIDTH
0.1
1.5
2
2.5
3
3.5 4.5
4
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
V
C
= 0V,
f = 1 MHZ
GS
I = 20A
D
= C + C , C SHORTED
V
V
= 24V
= 15V
iss
gs
gd ds
DS
DS
12
10
8
C
= C
rss
gd
C
= C + C
oss
ds
gd
VDS= 6V
10000
1000
100
C
iss
C
oss
6
C
rss
4
2
10
0
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFHM830DPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.10
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
75
Limited By Package
2.5
2.0
1.5
50
25
0
I
= 1.0A
D
ID = 10mA
ID = 5.0mA
ID = 2.0mA
ID = 1.0mA
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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4
September 25, 2015
IRFHM830DPbF
16
14
12
10
8
350
300
250
200
150
100
50
I
= 20A
D
I
D
TOP
5.8A
11A
BOTTOM 20A
T
= 125°C
J
6
4
T
= 25°C
2
J
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
L
V
DS
D.U.T
R
+
-
G
V
DD
I
A
AS
I
20V
AS
0.01
t
p
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
5
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IRFHM830DPbF
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFHM830DPbF
PQFN 3.3 x 3.3 Outline “B” Package Details
PQFN 3.3 x 3.3 Outline “G” Package Details
8
7
6
5
#1
2
3
4
#1
2
3
4
8
7
6
5
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
7
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IRFHM830DPbF
PQFN 3.3 x 3.3 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PART NUMBER
XXXX
?YWW?
XXXXX
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 Inches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between successive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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September 25, 2015
IRFHM830DPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.409mH, RG = 50, IAS = 12A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability.
Revision History
Date
Comments
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
Updated data sheet with new IR corporate template
Updated schematic on page1
12/16/2013
6/6/2014
Updated part marking on page 7.
Updated Tape and Reel on page 8.
Updated package outline to reflect the PCN # (67-PCN90-Public-R2) for “option B” and added
package outline for “option G” on page 7
9/25/2015
Updated "IFX" logo on all pages.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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September 25, 2015
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