IRFHM830DPBF [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM830DPBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM830DPbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
4.3
m
Ω
13
nC
RG (typical)
1.1
Ω
ID
40
A
3.3mm x 3.3mm PQFN
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for Buck Converters
FeaturesandBenefits
Features
Benefits
Low RDSon (≤ 4.3mΩ)
Lower Conduction Losses
Lower switching losses
Increased Power Density
Increased Reliability
Increased Power Density
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Multi-Vendor Compatibility
Easier Manufacturing
⇒
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
IRFHM830DTRPbF
IRFHM830DTR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Tape and Reel
Tape and Reel
4000
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
30
Units
VDS
V
VGS
±20
20
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
16
40
A
40
160
2.8
37
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.022
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 9
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IRFHM830DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
GS = 0V, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
V
/ T
J
ΔΒ DSS Δ
––– 0.02 ––– V/°C Reference to 25°C, ID = 4mA
RDS(on)
–––
–––
1.35
–––
–––
–––
–––
–––
69
3.4
5.7
4.3
7.1
VGS = 10V, ID = 20A
m
Ω
V
V
V
V
V
GS = 4.5V, ID = 20A
VGS(th)
Gate Threshold Voltage
1.8
2.35
V
DS = VGS, ID = 50μA
V
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.0
–––
–––
–––
––– mV/°C
DS = VGS, ID = 1mA
GS(th)
IDSS
500
5
DS = 24V, VGS = 0V
μA
DS = 24V, VGS = 0V, TJ = 125°C
mA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
VGS = 20V
VGS = -20V
nA
––– -100
gfs
Qg
Qg
–––
27
–––
–––
20
S
VDS = 15V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
13
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
2.9
1.8
4.5
3.8
6.3
10
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 20A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
See Fig.17 & 18
Qsw
Qoss
nC
V
DS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.1
9.8
20
–––
–––
–––
–––
–––
Ω
V
DD = 15V, VGS = 4.5V
ID = 20A
R =1.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
9.1
6.7
Ω
G
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1797 –––
VGS = 0V
–––
–––
363
148
–––
–––
VDS = 25V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
82
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
20
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
–––
–––
––– 40
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
–––
160
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
––– 0.85
V
TJ = 25°C, IS = 20A, VGS = 0V
16
17
24
26
ns TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/μs
Qrr
ton
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
3.4
37
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
°C/W
46
RθJA (<10s)
31
2
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IRFHM830DPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
60μs
60μs
≤
PULSE WIDTH
Tj = 150°C
PULSE WIDTH
≤
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
= 15V
J
V
DS
≤
60μs PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
V
V
= 24V
= 15V
C
C
C
+ C , C
SHORTED
DS
DS
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
VDS= 6V
ds
gd
10000
1000
100
C
iss
6
C
C
oss
rss
4
2
0
10
0
10
20
30
40
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
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IRFHM830DPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T
= 150°C
100μsec
J
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.10
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
75
3.0
2.5
2.0
1.5
1.0
0.5
Limited By Package
50
25
0
I
= 1.0A
D
ID = 10mA
ID = 5.0mA
ID = 2.0mA
ID = 1.0mA
25
50
T
75
100
125
150
-75 -50 -25
T
0
25 50 75 100 125 150
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFHM830DPbF
16
14
12
10
8
350
300
250
200
150
100
50
I
= 20A
I
D
D
TOP
5.8A
11A
BOTTOM 20A
T
= 125°C
J
6
4
T = 25°C
J
2
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFHM830DPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFHM830DPbF
PQFN 3.3x3.3 Outline Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3x3.3 Outline Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
ASSEMBLY
MARKING CODE
SITE CODE
(Per Marking Spec)
(Per SCOP 200-002)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
PIN 1
IDENTIFIER
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRFHM830DPbF
PQFN 3.3x3.3 Outline Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 I nches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimens ion des ign to accommodate the component width
Dimension design to accommodate the component lenght
Dimension des ign to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between s ucces s ive cavity centers
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFHM830DPbF
Qualification Information†
Industrial††
(per JEDEC JESD47F††† guidelines)
MSL1
Qualification level
Moisture Sensitivity Level
RoHS Compliant
PQFN 3.3mm x 3.3mm
(per JEDEC J-STD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.409mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rthjc is guaranteed by design.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability
Revision History
Date
Comments
•
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
Updated data sheet with new IR corporate template
12/16/2013
• Updated schematic on page1
6/6/2014
•
•
Updated part marking on page 7.
Updated Tape and Reel on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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