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IRFHM792PBF_15 [INFINEON]

Compatible with Existing Surface Mount Techniques;
IRFHM792PBF_15
型号： IRFHM792PBF_15
厂家： Infineon    Infineon
描述：

Compatible with Existing Surface Mount Techniques
文件： 总9页 (文件大小：267K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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IRFHM792PbF  
HEXFET® Power MOSFET  
VDS  
100  
V
V
TOP VIEW  
Vgs max  
± 20  
RDS(on) max  
(@VGS = 10V)  
Qg typ  
D
D
D
5
D
8
m
195  
4.2  
Ω
6
7
G
S
G
S
D
nC  
A
D
D
D
D
D
ID  
3.4  
4
G
1
S
2
G
3
S
(@Tc(Bottom) = 25°C)  
PQFN Dual 3.3X3.3 mm  
Applications  
• DC-DC Primary Switch  
• 48V Battery Monitoring  
FeaturesandBenefits  
Features  
Low RDSon (<195mΩ)  
Low Thermal Resistance to PCB (< 12°C/W)  
Low Profile (<1.2mm)  
Benefits  
Lower Conduction Losses  
Enable better thermal dissipation  
results in Increased Power Density  
⇒
Industry-Standard Pinout  
Compatible with Existing Surface Mount Techniques  
Multi-Vendor Compatibility  
Easier Manufacturing  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Industrial Qualification  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Orderable part number  
Package Type  
Note  
Form  
Quantity  
IRFHM792TRPBF  
IRFHM792TR2PBF  
PQFN Dual 3.3mm x 3.3mm  
PQFN Dual 3.3mm x 3.3mm  
Tape and Reel  
Tape and Reel  
4000  
400  
EOL notice # 259  
Absolute Maximum Ratings  
Parameter  
Max.  
100  
± 20  
2.3  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
I
I
@ TA = 25°C  
D
D
D
D
D
@ TA = 70°C  
1.8  
4.8  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
@ TC = 25°C  
A
3.1  
Continuous Drain Current, VGS @ 10V (Wirebond Limited)  
Pulsed Drain Current  
3.4  
14  
DM  
Power Dissipation  
P
P
@TA = 25°C  
2.3  
D
D
W
Power Dissipation  
@TC(Bottom) = 25°C  
10.4  
0.018  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 9  
1
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December 16, 2013  
IRFHM792PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250μA  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
100  
–––  
–––  
2.0  
–––  
0.11  
164  
3.0  
-8.2  
–––  
–––  
–––  
–––  
–––  
4.2  
0.7  
0.3  
1.3  
1.9  
1.6  
6.7  
1.6  
3.4  
4.7  
5.2  
2.6  
251  
31  
–––  
–––  
195  
4.0  
V
ΔΒVDSS/ΔTJ  
RDS(on)  
VGS(th)  
V/°C Reference to 25°C, ID = 1.0mA  
Ω
VGS = 10V, ID = 2.9A  
m
VDS = VGS, ID = 10μA  
V
ΔVGS(th)  
IDSS  
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
–––  
–––  
–––  
–––  
–––  
3.5  
––– mV/°C  
20  
250  
100  
-100  
–––  
6.3  
VDS = 100V, VGS = 0V  
VDS = 100V, VGS = 0V, TJ = 125°C  
VGS = 20V  
μA  
mA  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
nA  
S
VGS = -20V  
gfs  
VDS = 50V, ID = 2.9A  
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Qsw  
Qoss  
RG  
Pre-Vth Gate-to-Source Charge  
Post-Vth Gate-to-Source Charge  
Gate-to-Drain Charge  
Gate Charge Overdrive  
Switch Charge (Qgs2 + Qgd)  
Output Charge  
–––  
–––  
–––  
–––  
–––  
–––  
VDS = 50V  
VGS = 10V  
ID = 2.9A  
nC  
nC  
V
DS = 16V, VGS = 0V  
DD = 50V, VGS = 10V  
Gate Resistance  
Ω
–––  
–––  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
V
Rise Time  
–––  
–––  
–––  
–––  
–––  
–––  
ID = 2.9A  
ns  
pF  
Ω
Turn-Off Delay Time  
RG=1.8  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS = 0V  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz  
13  
Avalanche Characteristics  
Parameter  
Typ.  
–––  
–––  
Max.  
Units  
mJ  
Single Pulse Avalanche Energy  
EAS  
IAR  
10.2  
2.9  
Avalanche Current  
A
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
MOSFET symbol  
–––  
–––  
3.4  
showing the  
integral reverse  
(Body Diode)  
Pulsed Source Current  
A
G
ISM  
–––  
–––  
14  
S
p-n junction diode.  
(Body Diode)  
VSD  
trr  
T = 25°C, I = 2.9A, V = 0V  
Diode Forward Voltage  
–––  
–––  
–––  
–––  
15  
1.3  
23  
68  
V
J
S
GS  
T = 25°C, I = 2.9A, VDD = 50V  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns  
nC  
J
F
Qrr  
ton  
di/dt = 500A/μs  
45  
Time is dominated by parasitic Inductance  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
–––  
Max.  
12  
Units  
Junction-to-Case  
RθJC (Bottom)  
RθJC (Top)  
RθJA  
Junction-to-Case  
85  
°C/W  
Junction-to-Ambient  
Junction-to-Ambient  
55  
RθJA (<10s)  
38  
2
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December 16, 2013  
IRFHM792PbF  
100  
10  
1
100  
10  
VGS  
15V  
10V  
8.0V  
6.0V  
5.0V  
4.5V  
4.3V  
4.0V  
VGS  
15V  
10V  
8.0V  
6.0V  
5.0V  
4.5V  
4.3V  
4.0V  
TOP  
TOP  
BOTTOM  
BOTTOM  
1
0.1  
0.01  
4.0V  
PULSE WIDTH Tj = 150°C  
4.0V  
PULSE WIDTH Tj = 25°C  
60μs  
≤
60μs  
≤
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
10  
1
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I
= 2.9A  
D
V
= 10V  
GS  
T
= 150°C  
J
T
= 25°C  
J
V
= 50V  
DS  
≤
60μs PULSE WIDTH  
0.1  
2
4
6
8
10 12 14  
-60 -40 -20  
0
20 40 60 80 100 120 140160  
T
J
, Junction Temperature (°C)  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 4. Normalized On-Resistance vs. Temperature  
Fig 3. Typical Transfer Characteristics  
14  
10000  
1000  
100  
10  
V
= 0V,  
= C  
f = 1 MHZ  
GS  
I = 2.9A  
D
C
C
C
+ C , C  
SHORTED  
ds  
iss  
gs  
gd  
12  
= C  
rss  
oss  
gd  
= C + C  
V
V
= 80V  
= 50V  
DS  
DS  
ds  
gd  
10  
8
VDS= 20V  
C
iss  
C
oss  
6
C
rss  
4
2
0
1
0
1
2
3
4
5
6
1
10  
, Drain-to-Source Voltage (V)  
100  
Q , Total Gate Charge (nC)  
V
DS  
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage  
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage  
3
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December 16, 2013  
IRFHM792PbF  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED BY RDS(on)  
100μsec  
T
= 150°C  
J
Limited by  
Wirebond  
1msec  
T
= 25°C  
J
10msec  
Tc = 25°C  
Tj = 150°C  
DC  
V
= 0V  
GS  
Single Pulse  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.10  
1
10  
100  
1000  
V
, Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode Forward Voltage  
Fig 8. Maximum Safe Operating Area  
4.0  
5.2  
4.8  
Limited By Wirebond  
4.4  
3.5  
3.0  
4
3.6  
3.2  
2.8  
2.4  
2
I
I
I
I
= 10μA  
= 25μA  
= 250μA  
= 1.0mA  
2.5  
2.0  
1.5  
D
D
D
D
1.6  
1.2  
0.8  
0.4  
0
-75 -50 -25  
0
25 50 75 100 125 150  
25  
50  
T
75  
100  
125  
150  
T , Temperature ( °C )  
, Case Temperature (°C)  
J
C
Fig 9. Maximum Drain Current vs.  
Fig 10. Threshold Voltage vs. Temperature  
Case(Bottom)Temperature  
100  
10  
D = 0.50  
0.20  
0.10  
1
0.05  
0.02  
0.01  
0.1  
Notes:  
SINGLE PULSE  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
( THERMAL RESPONSE )  
0.01  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)  
4
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December 16, 2013  
IRFHM792PbF  
45  
40  
35  
30  
25  
20  
15  
10  
5
400  
350  
300  
250  
200  
150  
100  
I
D
I
= 2.9A  
D
TOP  
0.43A  
0.98A  
BOTTOM 2.90A  
T
= 125°C  
J
T
= 25°C  
J
0
25  
50  
75  
100  
125  
150  
5
10  
15  
20  
Starting T , Junction Temperature (°C)  
J
V
Gate -to -Source Voltage (V)  
GS,  
Fig 13. Maximum Avalanche Energy vs. Drain Current  
Fig 12. On-Resistance vs. Gate Voltage  
V
(BR)DSS  
t
p
15V  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
I
AS  
20V  
Ω
0.01  
t
p
Fig 14b. Unclamped Inductive Waveforms  
Fig 14a. Unclamped Inductive Test Circuit  
RD  
VDS  
VDS  
90%  
VGS  
D.U.T.  
RG  
+VDD  
-
10%  
VGS  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1  
td(on)  
td(off)  
tr  
tf  
Fig 15a. Switching Time Test Circuit  
www.irf.com © 2013 International Rectifier  
Fig 15b. Switching Time Waveforms  
5
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December 16, 2013  
IRFHM792PbF  
Driver Gate Drive  
P.W.  
P.W.  
D =  
D.U.T  
Period  
Period  
+
*
=10V  
V
GS  
ƒ
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
• dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
Inductor Curent  
I
SD  
Ripple  
≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
Id  
Vds  
Vgs  
L
VCC  
DUT  
0
Vgs(th)  
1K  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 18. Gate Charge Waveform  
Fig 17. Gate Charge Test Circuit  
6
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December 16, 2013  
IRFHM792PbF  
PQFN Dual 3.3x3.3 Package Details  
For footprint and stencil design recommendations, please refer to application note AN-1154 at  
http://www.irf.com/technical-info/appnotes/an-1154.pdf  
PQFN Dual 3.3x3.3 Part Marking  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
7
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December 16, 2013  
IRFHM792PbF  
PQFN Dual 3.3x3.3 Tape and Reel  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
8
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
December 16, 2013  
IRFHM792PbF  
Qualification information†  
Industrial††  
(per JEDEC JES D47F ††† guidelines )  
Qualification level  
MS L 1  
Moisture Sensitivity Level  
RoHS compliant  
PQFN Dual 3.3mm x 3.3mm  
(per JEDEC J-S T D-020D†††  
Yes  
)
†
Qualification standards can be found at International Rectifier’s web site  
http://www.irf.com/product-info/reliability  
†† Higher qualification ratings may be available should the user have such requirements.  
Please contact your International Rectifier sales representative for further information:  
http://www.irf.com/whoto-call/salesrep/  
††† Applicable version of JEDEC standard at the time of product release.  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Starting TJ = 25°C, L = 2.43mH, RG = 50Ω, IAS = 2.9A.  
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.  
„ R is measured at TJ of approximately 90°C.  
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.  
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 3.4A by wirebond capability.  
Revision History  
Date  
Comments  
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)  
12/16/2013  
•
Updated data sheet with new IR corporate template  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
9
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
December 16, 2013  

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