IRFHM4226PBF [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM4226PBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：560K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFHM4226TRPbF
HEXFET® Power MOSFET
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
2.4
m
(@ VGS = 4.5V)
3.3
16
Qg (typical)
nC
A
ID
60
(@TC (Bottom) = 25°C)
PQFN 3.3 x 3.3 mm
Applications
Control or Synchronous MOSFET for high frequency buck converters
Features
Benefits
Low RDSon (<2.4m)
Low Charge (typical 16nC)
Low Thermal Resistance to PCB (<3.2°C/W)
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
IRFHM4226TRPbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM4226TRPbF
Absolute Maximum Ratings
Parameter
Max.
± 20
Units
VGS
Gate-to-Source Voltage
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
28
105
67
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
60
IDM
420
2.7
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
Power Dissipation
39
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.021
W/°C
TJ
-55 to + 150
°C
TSTG
Notes through are on page 9
1
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IRFHM4226TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
–––
–––
–––
1.1
Typ.
–––
21
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
BVDSS/TJ
RDS(on)
1.7
2.6
1.6
-5.7
–––
–––
–––
–––
32
2.4
3.3
2.1
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
VDS = VGS, ID = 50µA
m
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
–––
–––
–––
–––
136
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
1.0
100
-100
–––
–––
24
µA VDS = 20V, VGS = 0V
VGS = 20V
nA
IGSS
V
V
GS = -20V
DS = 10V, ID = 30A
gfs
Qg
S
nC VGS = 10V, VDS = 13V, ID = 30A
Qg
Total Gate Charge
16
V
V
DS = 13V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.6
2.0
5.8
4.6
7.8
15
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 30A
nC VDS = 16V, VGS = 0V
Gate Resistance
1.1
11
td(on)
Turn-On Delay Time
VDD = 13V, VGS = 4.5V
ns ID = 30A
tr
td(off)
tf
Ciss
Coss
Crss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
35
14
8.1
2000
570
150
–––
–––
–––
–––
–––
–––
RG=1.8
VGS = 0V
pF
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
IAR
Single Pulse Avalanche Energy
–––
124
mJ
Avalanche Current
–––
30
A
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
–––
–––
––– 60
A
––– 420
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
16
28
1.0
24
42
V
ns
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VDD = 13V
nC di/dt = 450A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Case
–––
–––
–––
–––
3.2
RJC (Bottom)
RJC (Top)
RJA
°C/W
35
47
30
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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IRFHM4226TRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
BOTTOM
BOTTOM
2.75V
2.75V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
100
10
I
= 30A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
1
V
= 10V
DS
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
1.0
2.0
V
3.0
4.0
5.0
6.0
7.0
T , Junction Temperature (°C)
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
10000
1000
V
= 0V,
f = 1 MHZ
GS
I = 30A
D
C
C
C
= C + C , C SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
V
V
V
= 20V
= 13V
= 5.0V
DS
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
0
5
10 15 20 25 30 35 40
0.1
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFHM4226TRPbF
1000
100
10
OPERATION IN THIS AREA
1000
100
10
LIMITED BY R (on)
DS
T = 150°C
J
100µsec
T = 25°C
Limited by Package
J
1msec
1
10msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
V
= 0V
GS
0.1
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
120
Limited by package
100
2.4
2.0
80
60
40
20
0
I
= 50µA
D
I
= 250µA
= 1.0mA
= 10mA
1.6
1.2
0.8
D
I
D
I
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFHM4226TRPbF
8.0
6.0
4.0
2.0
0.0
600
500
400
300
200
100
0
I
= 30A
I
D
D
TOP
5.1A
7.2A
BOTTOM 30A
T = 125°C
J
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Current vs. pulse Width
5
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IRFHM4226TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
6
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IRFHM4226TRPbF
PQFN 3.3 x 3.3 Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFHM4226TRPbF
PQFN 3.3 x 3.3 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
3.3 X 3.3 PQFN
13
4000
12.4
3.600
3.600
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFHM4226TRPbF
Qualification Information†
MSL1
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.275mH, RG = 50, IAS = 30A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 60A by source bonding technology.
Pulse drain current is limited at 240A by source bonding technology.
Revision History
Date
08/07/13
12/5/13
Comments
Added "FastIRFET™" above part number, on page1
Updated fig.14, limit curve to 40A package limitation current, on page 5
Updated IC @ TC 25C from “40A” to “60A” on page 1, 2
Updated schematic on page 1
Updated fig 8 and 9 on page 4
6/3/14
Updated fig14 on page 5
Updated Tape and Reel on page 8
Updated RDS(on) from 2.2m to 2.4m in accordance with PCN#188, For backwards
compatibility, datasheet thermal calculations remain unchanged (RDS(on) = 2.2 m)
12/09/14
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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December 9, 2014
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