IRFHE4250D [INFINEON]
;
| 型号： | IRFHE4250D |
| 厂家： | 
Infineon |
| 描述： | |
| 文件： | 总14页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHE4250D FastIRFET 6×6 PQFN 顶部外露电源模块器件
为 DC-DC 应用提供卓越效率
2014 年 8 月 13 日
全球功率半导体和管理方案领导厂商 – 国际整流器公司 (International Rectifier，简称 IR) 推出 IRFHE4250D FastIRFET 双功
率 MOSFET，藉以扩充电源模块组件系列。新款 25V 器件在 25A 的电流下能够比其它顶级的传统电源模块产品减少 5%以上
的功率损耗，适用于 12V 输入 DC-DC 同步降压应用，包括先进的电信和网络通讯设备、服务器、显卡、台式电脑、超极本
(Ultrabook) 和笔记本电脑等。
IRFHE4250D 配备 IR 新一代硅技术，并采用了适合背面贴装的 6×6 PQFN 顶部外露纤薄封装，为电源模块带来更多封装选择。
这款封装结合了出色的散热性能、低导通电阻 (Rds(on)) 与栅极电荷 (Qg)，提供卓越的功率密度和较低的开关损耗，从而缩
减电路板尺寸，提升整体系统效率。
IR 亚太区销售副总裁潘大伟表示：“高达 60A 额定值的 IRFHE4250D FastIRFET MOSFET 是全球首款顶部外露电源模块器件，
提供行业领先的功率密度，有效满足要求顶尖效率的高性能 DC-DC 应用。”
与 IR 的其它电源模块器件一样，IRFHE4250D 可与各种控制器或驱动器共同操作，以提供设计灵活性，同时以小的占位面积
实现更高的电流、效率和频率，还为 IR 电源模块带来全新的 6×6 PQFN 封装选择。
IRFHE4250D 符合工业标准及第二级湿度敏感度 (MSL2) 标准，并采用了 6×6 PQFN 顶部外露封装，备有符合电子产品有害
物质管制规定 (RoHS) 的环保物料清单。
规格
在 4.5V 下的典型/
在 4.5V 下的
典型 Q (nC)
在 4.5V 下的
典型 QGD (nC)
器件编号
封装
电流额定值
G
最高导通电阻
IRFHE4250D
PQFN
60A
3.2 / 4.1
13
35
5. × 13
1.35 / 1.0
6mm × 6mm
产品现正接受批量订单，相关数据和 SPICE 模型，请浏览 IR 的网站 http://www.irf.com。
IR 简介
国际整流器公司 (简称 IR，纽约证交所代号 IRF) 是全球功率半导体和管理方案领导厂商。IR 的模拟及混合信号集成电路、
先进电路器件、集成功率系统和器件广泛应用于驱动高性能计算设备及降低电机的能耗 (电机是全球最大耗能设备) ，是众
多国际知名厂商开发下一代计算机、节能电器、照明设备、汽车、卫星系统、宇航及国防系统的电源管理基准。
IR 成立于 1947 年，总部设在美国洛杉矶，在二十个国家设有办事处。
IR 全球网站：www.irf.com，中国网站：www.irf.com.cn。
商标
FastIRFET 是国际整流器公司的商标， IR 是国际整流器公司的注册商标。所有其它的产品名称可能与其相关持有人拥有的
商标名称相同。
FASTIRFET™
IRFHE4250DPbF
HEXFET® Power MOSFET
Q1
25
Q2
25
VDSS
V
RDS(on) max
(@VGS = 4.5V)
4.10
13
1.35
35
m
nC
Qg (typical)
ID
60
60
A
(@TC = 25°C)
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 6X6 mm
Benefits
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
Increased power density
Increased power density
Increased power density
Lower switching losses
Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
results in
MSL2, industrial qualification
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFHE4250DTRPbF
Form
Quantity
4000
IRFHE4250DPbF
Dual PQFN 6mm x 6mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Q1 Max.
Q2 Max.
Units
VGS
± 16
V
A
ID @ TC = 25°C
86
69
303
243
ID @ TC = 70°C
ID @ TC = 25°C
Continuous Drain Current
(Source Bonding Technology Limited)
60
60
IDM
Pulsed Drain Current
Power Dissipation
Power Dissipation
180
156
100
525
156
PD @TC = 25°C
PD @TC = 70°C
W
100
Linear Derating Factor
1.3
1.3
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
-55 to + 150
TSTG
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
Junction-to-Case
3.7
0.91
24
0.91
2.1
24
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
17
17
RJA (<10s)
Notes through are on page 12
1
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
––– –––
––– –––
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Breakdown Voltage Temp. Coefficient
–––
–––
23
21
––– mV/°C Reference to 25°C, ID = 1.0mA
BVDSS/TJ
–––
Reference to 25°C, ID = 10mA
––– 2.20 2.75
––– 0.70 0.90
––– 3.20 4.10
––– 1.00 1.35
VGS = 10V, ID = 27A
RDS(on)
Static Drain-to-Source On-Resistance
V
GS = 10V, ID = 27A
VGS = 4.5V, ID = 27A
GS = 4.5V, ID = 27A
m
V
VGS(th)
Gate Threshold Voltage
1.1
1.1
1.6
1.6
2.1
2.1
V
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -5.8 ––– mV/°C Q1: VDS = VGS, ID = 35µA
VGS(th)/TJ
IDSS
IGSS
gfs
––– -7.8 –––
––– ––– 1.0
––– ––– 500
Q2: VDS = VGS, ID = 1.0mA
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
nA VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Q1/Q2 ––– ––– 100
Q1/Q2 ––– ––– -100
VGS = -16V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
73
––– –––
S
VDS = 10V, ID = 14A
121 ––– –––
VDS = 10V, ID = 23A
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
35
20
53
Q1
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.6 –––
8.6 –––
1.3 –––
3.8 –––
5.2 –––
VDS = 13V
VGS = 4.5V, ID = 13A
nC
Q2
VDS = 13V
13
–––
VGS = 4.5V, ID = 23A
Qgodr
Qsw
Qoss
RG
2.9 –––
9.6 –––
6.5 –––
––– 16.8 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
41
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
0.5 –––
0.4 –––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
17
33
54
14
24
12
16
–––
–––
–––
–––
–––
–––
–––
–––
Q1
VDS = 13V VGS = 4.5V
ID = 14A, Rg = 1.8
ns
Q2
Turn-Off Delay Time
Fall Time
VDS = 13V VGS = 4.5V
ID = 23A, Rg = 1.8
Ciss
Input Capacitance
––– 1735 –––
––– 4765 –––
––– 493 –––
––– 1577 –––
––– 137 –––
––– 370 –––
VGS = 0V
pF
VDS = 13V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
2
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Q1 Max.
71
Q2 Max.
481
63
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
32
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
––– ––– 60
––– ––– 60
––– ––– 180
––– ––– 525
––– 0.77 0.88
––– 0.60 0.75
A
A
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
VSD
trr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 25°C, IS = 27A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
34
16
54
29
51
24
81
ns Q1 TJ = 25°C, IF = 30A
VDD = 13V, di/dt = 200A/µs
nC Q2 TJ = 25°C, IF = 30A
Qrr
VDD = 13V, di/dt = 200A/µs
3
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
2.5V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
BOTTOM
BOTTOM
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 25°C
2.75V
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.75V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 150°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
1000
100
10
100
10
1
T
= 150°C
T
= 150°C
J
J
T
= 25°C
= 15V
J
T
= 25°C
J
1
V
= 15V
V
DS
DS
60µs PULSE WIDTH
60µs PULSE WIDTH
0.1
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.0
1.5
2.0
2.5 3.0 3.5 4.0
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
September 26, 2013
Fig 5. Typical Transfer Characteristics
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4
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
10000
1000
100
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
V
= 0V,
= C
f = 1 MHZ
+ C , C SHORTED
GS
GS
C
C
C
+ C , C
SHORTED
C
C
C
iss
gs
gd
gd
ds
iss
gs
gd
ds
= C
= C
rss
oss
gd
= C + C
rss
oss
gd
= C + C
ds
ds
gd
C
C
iss
C
iss
oss
C
oss
C
C
rss
rss
100
1
10
, Drain-to-Source Voltage (V)
100
1
10
, Drain-to-Source Voltage (V)
100
V
DS
V
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
14.0
I
= 30A
I = 30A
D
D
12.0
10.0
8.0
12.0
10.0
8.0
V
V
= 20V
= 13V
DS
DS
V
V
= 20V
= 13V
DS
DS
6.0
6.0
4.0
4.0
2.0
2.0
0.0
0.0
0
5
10 15 20 25 30 35 40
Q , Total Gate Charge (nC)
0
10 20 30 40 50 60 70 80 90 100
Q , Total Gate Charge (nC)
G
G
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R (on)
OPERATION IN THIS AREA
DS
LIMITED BY R
(on)
DS
1000
100
10
100µsec
100
10
1
1msec
100µsec
1msec
Limited by
package
Limited by package
10msec
10msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.1
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
5
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September 26, 2013
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.6
1.4
1.2
1.0
0.8
0.6
I
= 27A
I
= 27A
D
D
V
= 4.5V
V
= 4.5V
GS
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
1000
Fig 13. Normalized On-Resistance vs. Temperature
1000
T
= 150°C
J
100
10
100
T
= 150°C
J
T
= 25°C
J
T
V
= 25°C
= 0V
J
10
V
= 0V
GS
GS
1.0
1.0
0.2
0.4
0.6
0.8
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, Source-to-Drain Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
SD
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
10
3.0
I
= 23A
I
= 27A
D
D
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
T
= 125°C
J
T
= 125°C
J
T
= 25°C
J
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
V
Gate -to -Source Voltage (V)
V
Gate -to -Source Voltage (V)
GS,
GS,
Fig 17. Typical On-Resistance vs. Gate Voltage
Fig 18. Typical On-Resistance vs. Gate Voltage
September 26, 2013
6
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© 2013 International Rectifier
IRFHE4250DPbF
Q2 - Synchronous FET
Q1 - Control FET
350
300
250
200
150
100
50
100
80
60
40
20
0
Limited By Package
Limited By Package
0
25
50
T
75
100
125
150
25
50
T
75
100
125
150
, Case Temperature (°C)
, Case Temperature (°C)
C
C
Fig 20. Maximum Drain Current vs. Case Temperature
Fig 19. Maximum Drain Current vs. Case Temperature
2.5
2.2
2.0
1.8
1.6
2.0
1.5
I
= 1.0mA
D
I
= 35µA
D
1.4
1.2
1.0
0.8
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150
-75 -50 -25
0
25 50 75 100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
300
2000
I
I
D
D
TOP
8.6A
15A
TOP
18A
33A
250
200
150
100
50
1500
1000
500
0
BOTTOM 32A
BOTTOM 63A
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Starting T , Junction Temperature (°C)
J
J
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
7
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 27. Single Avalanche Event: Pulse Current vs. Pulse Width (Q1)
8
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 28. Single Avalanche Event: Pulse Current vs. Pulse Width (Q2)
9
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September 26, 2013
IRFHE4250DPbF
Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 30a. Unclamped Inductive Test Circuit
Fig 30b. Unclamped Inductive Waveforms
Fig 31a. Switching Time Test Circuit
Fig 31b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 32a. Gate Charge Test Circuit
Fig 32b. Gate Charge Waveform
September 26, 2013
10
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© 2013 International Rectifier
IRFHE4250DPbF
Dual PQFN 6x6 Outline Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
September 26, 2013
IRFHE4250DPbF
Dual PQFN 6x6 Outline Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification level
(per JEDEC JESD47F †† guidelines )
MSL2
DUAL PQFN 6mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C,
Q1: L = 0.14 mH, RG = 50, IAS = 32A;
Q2: L = 0.24 mH, RG = 50, IAS = 63A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to Q1 = 60A & Q2 = 60A by source bonding technology.
Pulsed drain current is limited to 240A by source bonding technology.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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© 2013 International Rectifier
September 26, 2013
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