IRFEA240PBF [INFINEON]
Power Field-Effect Transistor, 11A I(D), 200V, 0.18ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28;
| 型号： | IRFEA240PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 11A I(D), 200V, 0.18ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总7页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93978
HEXFET® POWER MOSFET
SURFACE MOUNT (LCC-28)
IRFEA240
200V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRFEA240
200V
0.18Ω
11A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
LCC-28
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
11
7.0
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
44
DM
@ T = 25°C
P
50
W
W/°C
V
D
C
Linear Derating Factor
0.4
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
±20
80
GS
E
mJ
A
AS
I
11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
5.0
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
0.89
For footnotes refer to the last page
www.irf.com
1
10/20/00
IRFEA240
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.25
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.18
Ω
V
= 10V, I = 11A
GS D
DS(on)
➃
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
6.0
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
= 25V, I
= 11A ➃
DS
DS
I
25
250
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
84
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 11A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
17
41
V
= 100V
DS
t
t
t
t
25
V
DD
= 100V, I = 11A
D
196
80
R
= 9.1Ω
G
ns
d(off)
f
130
—
L
+ L
Total Inductance
S
D
nH
Measured from the center of
drain pad to center of source pad
Input Capacitance
—
—
—
1340
434
134
—
—
—
V
= 0V, V
= 25V
Ciss
GS DS
C
Output Capacitance
Reverse Transfer Capacitance
pF
f = 1.0MHz
oss
rss
C
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
11
44
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.5
470
6.5
V
T = 25°C, I = 11A, V
= 0V ➃
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = 11A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
2.5
thJC
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFEA240
100
10
1
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
4.5V
4.5V
0.1
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
0.01
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
11A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
5.0
V
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRFEA240
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
A
= 11
I
D
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 160V
= 100V
= 40V
C
= C
DS
DS
DS
rss
C
= C + C
gd
oss
ds
C
iss
C
oss
rss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
20
40
60
80
100
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
°
T = 150 C
J
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.7
1.2
1.7
2.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRFEA240
RD
12
10
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
2
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFEA240
200
160
120
80
I
D
TOP
5.0A
7.0A
BOTTOM 11A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
10V
2
0.01
Ω
t
p
40
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFEA240
Footnotes:
Repetitive Rating; Pulse width limited by
I
SD
≤ 11A, di/dt ≤ 270 A/µs,
≤ 200V, T ≤ 150°C
maximum junction temperature.
V
DD
J
V
= 25 V, Starting T = 25°C, L=1.25mH
J
DD
Peak I
Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
= 11A,
R = 25Ω
G
AS
Case Outline and Dimensions — LCC-28
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Data and specifications subject to change without notice. 10/00
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7
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