IRFF111 [GE]
Power MOS Field-Effect Transistors; 功率MOS场效应晶体管型号: | IRFF111 |
厂家: | GENERAL ELECTRIC COMPANY |
描述: | Power MOS Field-Effect Transistors |
文件: | 总5页 (文件大小:177K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFF112
Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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IRFF112
Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
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IRFF113
Power Field-Effect Transistor, 3A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
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IRFF120
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
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