IRFF110 [GE]
Power MOS Field-Effect Transistors; 功率MOS场效应晶体管型号: | IRFF110 |
厂家: | GENERAL ELECTRIC COMPANY |
描述: | Power MOS Field-Effect Transistors |
文件: | 总5页 (文件大小:177K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFF111
Power Field-Effect Transistor, 3.5A I(D), 80V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF111
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
VISHAY
IRFF112
Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF112
Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
VISHAY
IRFF113
Power Field-Effect Transistor, 3A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
VISHAY
©2020 ICPDF网 联系我们和版权申明