IRFF014 [INFINEON]
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;型号: | IRFF014 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 脉冲 晶体管 |
文件: | 总1页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号:
IRFF014PBF
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF034
Power Field-Effect Transistor, 16.2A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF110
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
VISHAY
IRFF110
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
FAIRCHILD
IRFF111
Power Field-Effect Transistor, 3.5A I(D), 80V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
©2020 ICPDF网 联系我们和版权申明