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IRF7756 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRF7756
型号： IRF7756
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET
文件： 总9页 (文件大小：183K)
中文：  中文翻译
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PD -94159A  
IRF7756  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Dual P-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (< 1.2mm)  
VDSS  
-12V  
RDS(on) max  
ID  
0.040@VGS = -4.5V  
0.058@VGS = -2.5V  
0.087@VGS = -1.8V  
±4.3A  
±3.4A  
±2.2A  
l Available in Tape & Reel  
Description  
8
7
6
5
1
2
3
4
HEXFET® Power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve ex-  
tremely low on-resistance per silicon area. This benefit,  
combined with the ruggedized device design, that Inter-  
nationalRectifier iswellknownfor,providesthedesigner  
with an extremely efficient and reliable device for  
battery and load management.  
1 = D1  
8 = D2  
7 = S2  
6 = S2  
5 = G2  
2 = S1  
3 = S1  
4 = G1  
TSSOP-8  
The TSSOP-8 package has 45% less footprint area than  
the standard SO-8. This makes the TSSOP-8 an ideal  
device for applications where printed circuit board space  
is at a premium. The low profile (<1.1mm) allows it to fit  
easily into extremely thin environments such as portable  
electronics and PCMCIA cards.  
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Max.  
-12  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current  
-4.3  
-3.5  
A
-17  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
1.0  
W
W
0.64  
8.0  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
±8.0  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to +150  
°C  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
125  
°C/W  
www.irf.com  
1
3/17/04  
IRF7756  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-12 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 0.040  
––– ––– 0.058  
––– ––– 0.087  
-0.4 ––– -0.9  
13 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -4.3A ‚  
GS = -2.5V, ID = -3.4A ‚  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
V
VGS = -1.8V, ID = -2.2A ‚  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -4.3A  
VGS(th)  
gfs  
IDSS  
Gate Threshold Voltage  
V
S
Forward Transconductance  
V
DS = -9.6V, VGS = 0V  
VDS = -9.6V, VGS = 0V, TJ = 70°C  
GS = -8.0V  
Drain-to-Source Leakage Current  
µA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
V
nA  
IGSS  
VGS = 8.0V  
ID = -4.3A  
Qg  
––– 12  
18  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
––– 1.8 2.7  
––– 2.9 4.4  
––– 12 –––  
––– 18 –––  
––– 160 –––  
––– 170 –––  
––– 1400 –––  
––– 310 –––  
––– 240 –––  
nC VDS = -6.0V  
VGS = -4.5V  
VDD = -6.0V,  
ns  
Rise Time  
ID = -1.0A  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
VGS = -4.5V ‚  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF  
VDS = -10V  
ƒ = 1.0kHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
showing the  
––– ––– -1.0  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
––– ––– -17  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
V
TJ = 25°C, IS = -1.0A, VGS = 0V ‚  
TJ = 25°C, IF = -1.0A  
––– 35  
––– 20  
53  
30  
ns  
Qrr  
nC di/dt = -100A/µs ‚  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Surface mounted on FR-4 board, t ≤ 10sec.  
max. junction temperature.  
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.  
2
www.irf.com  
IRF7756  
100  
10  
1
100  
10  
VGS  
VGS  
TOP  
-7.5V  
-4.5V  
-2.5V  
-1.8V  
-1.5V  
-1.2V  
-1.0V  
TOP  
-7.5V  
-4.5V  
-2.5V  
-1.8V  
-1.5V  
-1.2V  
-1.0V  
BOTTOM -0.8V  
BOTTOM -0.8V  
1
-0.8V  
0.1  
-0.8V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 25 C  
J
°
T = 150 C  
J
0.01  
0.1  
0.1  
0.1  
1
10  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
2.0  
100  
10  
-4.3A  
=
I
D
1.5  
1.0  
0.5  
0.0  
T
= 150°C  
J
1
0
T
= 25°C  
J
V
= -10V  
DS  
20µs PULSE WIDTH  
V
GS  
=-4.5V  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
0.5  
1.0  
1.5 2.0  
T , Junction Temperature( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7756  
10  
8
2400  
2000  
1600  
1200  
800  
I = -4.3A  
D
V
= 0V,  
f = 1 MHZ  
GS  
C
= C + C  
,
C
ds  
SHORTED  
V
V
=-9.6V  
=-6V  
iss  
gs  
gd  
DS  
DS  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds  
gd  
Ciss  
6
4
2
Coss  
Crss  
400  
0
1
0
0
5
10  
15  
20  
25  
10  
100  
Q
, Total Gate Charge (nC)  
G
-V , Drain-to-Source Voltage (V)  
DS  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
100µsec  
1msec  
°
T = 150 C  
J
10msec  
°
T = 25 C  
T
= 25°C  
J
A
Tj = 150°C  
Single Pulse  
V
= 0 V  
GS  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
0.1  
1
10  
100  
-V ,Source-to-Drain Voltage (V)  
SD  
-V  
, Drain-toSource Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRF7756  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
90%  
Fig 9. Maximum Drain Current Vs.  
V
DS  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1000  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.02  
0.01  
t
1
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D = t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7756  
0.040  
0.035  
0.030  
0.025  
0.020  
0.07  
0.06  
0.05  
0.04  
0.03  
V
= -1.8V  
GS  
V
V
= -2.5V  
GS  
I
= -4.3A  
D
= -4.5V  
GS  
0.02  
1.0  
2.0  
3.0  
4.0  
5.0  
0
4
8
12  
16  
-V  
Gate -to -Source Voltage (V)  
-I , Drain Current (A)  
GS,  
D
Fig 12. Typical On-Resistance Vs. Drain  
Fig 11. Typical On-Resistance Vs. Gate  
Current  
Voltage  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
12V  
.3µF  
-
V
+
DS  
Q
Q
GD  
D.U.T.  
GS  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13a. Basic Gate Charge Waveform  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRF7756  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
80  
60  
40  
20  
0
I
= -250µA  
D
0.001  
0.010  
0.100  
1.000  
10.000  
100.000  
-75 -50 -25  
0
25  
50  
75 100 125 150  
Time (sec)  
T
, Temperature ( °C )  
J
Fig 15. Typical Power Vs. Time  
Fig 14. Threshold Voltage Vs. Tempera-  
ture  
www.irf.com  
7
IRF7756  
TSSOP-8 Part Marking Information  
EXAMPLE: THIS IS AN IRF7702  
DATE CODE (YW)  
LOT CODE (XX)  
TABLE 1  
XXYW  
7702  
PART NUMBER  
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)  
WORK  
YEAR  
Y
WEEK  
W
2001  
2002  
2003  
1994  
1995  
1996  
1997  
1998  
1999  
2000  
1
2
3
4
5
6
7
8
9
0
01  
02  
03  
04  
A
B
C
D
DATE CODE EXAMPLES:  
9503 = 5C  
9532 = EF  
24  
25  
26  
X
Y
Z
TABLE 2  
WORK WEEK 27-52, ALPHANUMERICYEAR CODE (A,B, ...ETC.)  
WORK  
YEAR  
Y
WEEK  
W
2001  
2002  
2003  
1994  
1995  
1996  
1997  
1998  
1999  
2000  
A
B
C
D
E
27  
28  
29  
30  
A
B
C
D
F
G
H
J
K
50  
51  
52  
X
Y
Z
TSSOP-8 Tape and Reel  
8LTSSOP (MO-153AA)  
Ø 13"  
16 mm  
16mm  
FEED DIRECTION  
NOTES:  
8 mm  
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.  
8
www.irf.com  
IRF7756  
TSSOP-8 Package Outline  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 3/04  
www.irf.com  
9

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