IRF7759L2TR1PBF_技术文档

PD - 96283

IRF7759L2TRPbF

IRF7759L2TR1PbF

DirectFET Power MOSFET

l RoHS Compliant, Halogen Free

Typical values (unless otherwise specified)

l Lead-Free (Qualified up to 260°C Reflow)

V_DSS

75V min ±20V max

V_GS

R_DS(on)

1.8mΩ@ 10V

V_gs(th)

l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification

Q_{g tot}

Q_gd

l Low Conduction Losses

200nC

62nC

3.0V

l High Cdv/dt Immunity

l Low Profile (<0.7mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

l Industrial Qualified

S

G

D

DirectFET ISOMETRIC

L8

Applicable DirectFET Outline and Substrate Outline

SB

SC

M2

M4

L4

L6

L8

Description

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package

is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses

in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system

reliability improvements, and makes this device ideal for high performance power converters.

Absolute Maximum Ratings

Max.

75

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

V

±20

160

113

26

V

GS

(Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_C= 25°C

D

@ T_C= 100°C

@ T_A= 25°C

@ T_C= 25°C

A

375

640

257

96

DM

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

mJ

A

8

6

4

2

0

1.95

1.85

1.75

1.65

I

= 96A

D

T

= 25°C

A

V

= 7.0V

GS

V

= 8.0V

= 10V

GS

T

= 125°C

J

GS

V

= 15V

GS

T

= 25°C

14

J

2

4

6

8

10

12

16

18

20

15

30

45

60

75

90

105

V

Gate -to -Source Voltage (V)

GS,

I , Drain Current (A)

D

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical On-Resistance vs. Drain Current

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.056mH, R_G= 25Ω, I_AS= 96A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

1

11/16/09

IRF7759L2TR/TR1PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

75

–––

0.02

1.8

3.0

-11

–––

200

37

–––

2.3

V

V/°C

mΩ

V

Reference to 25°C, I_D= 2mA

V

/ T

∆

J

∆Β

–––

2.0

DSS

V_GS= 10V, I_D= 96A

R_DS(on)

V_GS(th)

4.0

V_DS= V_GS, I_D= 250µA

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

74

––– mV/°C

V_DS= 75V, V_GS= 0V

V_DS= 60V, V_GS= 0V, T_J= 125°C

V_GS= 20V

20

µA

250

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

nA

V_GS= -20V

-100

V_DS= 25V, I_D= 96A

gfs

–––

300

–––

93

S

Q_g

–––

V_DS= 38V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

V_GS= 10V

I_D= 96A

11

nC

62

91

–––

See Fig. 9

73

V_DS= 16V, V_GS= 0V

60

nC

Gate Resistance

1.1

18

Ω

V_DD= 38V, V_GS= 10V

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

I_D= 96A

Rise Time

37

ns

R_G=1.8Ω

Turn-Off Delay Time

80

Fall Time

33

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

Input Capacitance

––– 12222 –––

––– 1465 –––

V_DS= 25V

Output Capacitance

pF ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

Reverse Transfer Capacitance

Output Capacitance

–––

––– 7457 –––

––– 955 –––

609

–––

V_GS= 0V, V_DS= 60V, f=1.0MHz

Output Capacitance

Diode Characteristics

Conditions

MOSFET symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

I_S

–––

160

showing the

(Body Diode)

A

I_SM

integral reverse

Pulsed Source Current

(Body Diode)

–––

640

p-n junction diode.

T_J= 25°C, I_S= 96A, V_GS= 0V

T_J= 25°C, I_F= 96A, V_DD= 38V

di/dt = 100A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

64

1.3

96

V

ns

nC

Q_rr

150

225

Notes:

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

www.irf.com

IRF7759L2TR/TR1PbF

Absolute Maximum Ratings

Max.

125

Parameter

Units

Power Dissipation

P

@T_C= 25°C

@T_C= 100°C

@T_A= 25°C

D

P

J

63

W

3.3

270

T

Peak Soldering Temperature

Operating Junction and

-55 to + 175

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

20

Max.

45

Units

R_θJA

Junction-to-Ambient

Junction-to-Can

R_θJA

–––

1.2

R_θJA

°C/W

R_θJ-Can

R_θJ-PCB

–––

Junction-to-PCB Mounted

0.5

10

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.10804

0.61403

0.45202

0.00001

0.000171

0.053914

0.006099

0.036168

τ

^Jτ_J

τ

^Cτ

0.01

0.001

0.0001

¹τ₁

Ci= τi/Ri

τ

²τ₂

³τ₃

⁴τ₄

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Notes:

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple incontact with top (Drain) of part.

Used double sided cooling, mounting pad with large heatsink.

R is measured at T_Jof approximately 90°C.

θ

Surface mounted on 1 in. square Cu

Mounted on minimum footprint full size board with metalized

board (still air).

back and with small clip heatsink. (still air)

www.irf.com

3

IRF7759L2TR/TR1PbF

1000

100

10

1000

VGS

15V

VGS

TOP

15V

10V

7.00V

5.50V

5.00V

4.50V

4.00V

3.75V

7.00V

5.50V

5.00V

4.50V

4.00V

3.75V

100

10

BOTTOM

3.75V

1

3.75V

60µs

0.1

0.01

60µs

PULSE WIDTH

Tj = 175°C

≤

PULSE WIDTH

≤

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

1000

I

= 96A

V

= 25V

D

DS

V

= 10V

≤

60µs PULSE WIDTH

GS

100

10

1

T

= 175°C

J

TJ = 25°C

TJ = -40°C

0.1

-60

-20

20

60

100

140

180

2

2.5

3

3.5

4

4.5

5

5.5

6

T , Junction Temperature (°C)

J

V

, Gate-to-Source Voltage (V)

GS

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

14

100000

V

= 0V,

= C

f = 1 MHZ

GS

I = 96A

D

C

+ C , C

SHORTED

V

= 60V

= 38V

iss

gs

gd

ds

DS

12

10

8

= C

V

rss

oss

gd

DS

= C + C

VDS= 15V

ds

gd

C

iss

10000

1000

100

C

oss

6

C

rss

4

2

0

50

100

150

200

250

300

1

10

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

V

G

DS

Fig 9. Typical Total Gate Charge vs

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Gate-to-Source Voltage

4

www.irf.com

IRF7759L2TR/TR1PbF

10000

1000

100

10

OPERATION IN THIS AREA LIMITED

T

= 175°C

BY R (on)

J

DS

TJ = 25°C

TJ = -40°C

1000

100

10

100µsec

DC

1msec

1

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

0

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

200

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

160

120

80

I

= 1.0A

D

40

ID = 1.0mA

ID = 250µA

0

25

50

75

100

125

150

175

-75 -50 -25

0

25 50 75 100 125 150 175

T

, Case Temperature (°C)

T , Temperature ( °C )

C

J

Fig 13. Typical Threshold Voltage vs.

Fig 12. Maximum Drain Current vs. Case Temperature

Junction Temperature

1200

I

D

TOP

15.39A

23.97A

1000

800

600

400

200

0

BOTTOM 96A

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

Fig 14. Maximum Avalanche Energy Vs. Drain Current

www.irf.com

5

IRF7759L2TR/TR1PbF

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

100

0.01

10

1

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τj = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 19a, 19b.

300

TOP

BOTTOM 1.0% Duty Cycle

= 96A

Single Pulse

250

200

150

100

50

I

D

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

0

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

Fig 16. Maximum Avalanche Energy Vs. Temperature

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_a

Driver Gate Drive

P.W.

D.U.T

Period

D =

Period

P.W.

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

-

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

+

-

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET^®Power MOSFETs

6

www.irf.com

IRF7759L2TR/TR1PbF

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

V

R

D.U.T

AS

GS

G

V

DD

-

I

A

20V

t

0.01Ω

p

I

AS

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

www.irf.com

7

IRF7759L2TR/TR1PbF

DirectFET Board Footprint, L8 (Large Size Can).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

G = GATE

D = DRAIN

S = SOURCE

D

S

G

8

www.irf.com

IRF7759L2TR/TR1PbF

DirectFET Outline Dimension, L8 Outline (LargeSize Can).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

DIMENSIONS

IMPERIAL

MIN

0.356

7.10 0.270

METRIC

MAX

9.15

CODE

MIN

9.05

6.85

5.90

0.55

0.58

1.18

0.98

0.73

0.38

1.34

2.52

0.59

0.03

0.09

MAX

0.360

0.280

0.236

0.026

0.024

0.048

0.017

0.030

0.017

0.058

0.106

0.028

0.003

0.007

A

B

C

D

E

F

6.00

0.65

0.62

0.232

0.022

0.023

1.22 0.046

1.02

0.77

0.42

1.47

2.69

0.70

0.08

0.18

0.015

0.029

0.015

0.053

0.099

0.023

0.001

0.003

G

H

J

K

L

M

N

P

DirectFET Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

www.irf.com

9

IRF7759L2TR/TR1PbF

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel

quantity is 4000 parts. (ordered as IRF7759L2PBF).

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

METRIC

MAX

IMPERIAL

MIN

CODE

MAX

N.C

MIN

A

B

C

D

E

F

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

13.2

N.C

22.4

18.4

N.C

0.520

N.C

100.0

N.C

0.889

0.724

G

H

0.646

0.626

16.4

15.9

LOADED TAPE FEED DIRECTION

NOTE: CONTROLLING

DIMENSIONS IN MM

DIMENSIONS

METRIC

IMPERIAL

CODE

MIN

MAX

0.476

0.161

0.642

0.299

0.291

0.398

NC

MAX

12.10

4.10

16.30

7.60

7.40

10.10

NC

0.469

0.154

0.626

0.291

0.284

0.390

0.059

A

B

C

D

E

F

11.90

3.90

15.90

7.40

7.20

9.90

1.50

G

H

0.063

1.60

10

www.irf.com

IRF7759L2TR/TR1PbF

Part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

1000

IRF7759L2TRPbF

IRF7759L2TR1PbF

DirectFET2 Large Can

"TR" suffix

"TR1" suffix

Qualification Information^†

Industrial ^††

(per JEDEC JESD47F^†††guidelines)

Qualification level

Comments: This family of products has passed JEDEC’s Industrial

qualification. IR’s Consumer qualification level is granted by extension of the

higher Industrial level.

MSL1

Moisture Sensitivity Level

RoHS Compliant

DFET2

(per JEDEC J-STD-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

This product has been designed and qualified to MSL1 rating for the Industrial market.

Additional storage requirement details for DirectFET products can be found in application note AN1035 on IRs Web site.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/2009

www.irf.com

11


型号：	IRF7759L2TR1PBF
厂家：	Infineon
描述：	RoHS Compliant, Halogen Free 符合RoHS ，无卤素
文件：	总11页 (文件大小：319K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7759L2TR1PBF [INFINEON]

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