IRF7769L1 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRF7769L1
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
文件：	总11页 (文件大小：569K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7769L1TRPbF

DirectFET™ Power MOSFET

Typical values (unless otherwise specified)

Applications

V_DSS

V_GS

±20V max

Q_gd

R_DS(on)

2.8m@ 10V

V_gs(th)

RoHS Compliant, Halogen Free 

Lead-Free (Qualified up to 260°C Reflow) 

Ideal for High Performance Isolated Converter

Primary Switch Socket

100V min

Q_{g tot}

Optimized for Synchronous Rectification

Low Conduction Losses

200nC

110nC

2.7V

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible 

Compatible with existing Surface Mount Techniques 

Industrial Qualified

DirectFET™ ISOMETRIC

Applicable DirectFET Outline and Substrate Outline 

Description

The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging

to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The

DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor

phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods

and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses

in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for

system reliability improvements, and makes this device ideal for high performance power converters.

Ordering Information

Standard Pack

Part number

Package Type

Note

Form

Quantity

IRF7769L1TRPbF

DirectFET Large Can

Tape and Reel

4000

“TR” suffix

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

100

±20

124

I_D@ T_C= 25°C

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_A= 25°C

I_D@ T_C= 25°C

I_DM

E_AS

I_AR

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited) 

Pulsed Drain Current

375

500

260

Single Pulse Avalanche Energy 

Avalanche Current 

12.00

10.00

8.00

6.00

4.00

2.00

3.10

= 74A

T = 25°C

= 7.0V

3.00

2.90

2.80

= 8.0V

= 10V

= 125°C

= 25°C

= 15V

0.00

2.0

, Drain Current (A)

100

4.0

6.0

8.0 10.0 12.0 14.0 16.0

, Gate-to-Source Voltage (V)

Fig 2. Typical On-Resistance vs. Drain Current

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes

 Click on this section to link to the appropriate technical paper.

 Click on this section to link to the DirectFET Website.

 Surface mounted on 1 in. square Cu board, steady state.

 TC measured with thermocouple mounted to top (Drain) of part.

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T_J= 25°C, L = 0.09mH, R_G= 25, I_AS= 74A.

2016-10-14

IRF7769L1TRPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

100 ––– –––

––– 0.02 –––

V_GS= 0V, I_D= 250µA

V/°C Reference to 25°C, I_D= 2mA

V_DSS/T_J

R_DS(on)

–––

2.0

2.8

2.7

3.5

4.0

V_GS= 10V, I_D= 74A 

m

V_GS(th)

V_DS= V_GS, I_D= 250µA

Gate Threshold Voltage Temp. Coefficient –––

-10 ––– mV/°C

V_GS(th)/T_J

––– –––

V_DS= 100 V, V_GS= 0V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

––– ––– 250

V_DS= 80V,V_GS= 0V,T_J=125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

––– ––– 100

––– ––– -100

410 ––– –––

––– 200 300

_GS= 20V

_GS= -20V

gfs

_DS= 25V, I_D= 74A

Q_g

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

t_d(on)

t_r

t_d(off)

t_f

Pre– Vth Gate-to-Source Charge

Post– Vth Gate-to-Source Charge

Gate-to-Drain Charge

–––

V_DS= 50V

9.0

nC V_GS= 10V

I_D= 74A

––– 110 165

––– 51 –––

––– 119 –––

–––

Gate Charge Overdrive

Switch Charge (Q_{gs2 +}Q_gd)

Output Charge

Gate Resistance

Turn-On Delay Time

See Fig.9

1.5

–––

nC V_DS= 16V,V_GS= 0V



V_DD= 50V, V_GS= 10V

Rise Time

I_D= 74A

Turn-Off Delay Time

Fall Time

–––

R_G= 1.8

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 11560 –––

––– 1240 –––

––– 590 –––

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

C_oss

Output Capacitance

––– 6665 –––

––– 690 –––

V_GS=0V, V_DS= 1.0V,ƒ =1.0MHz

V_GS=0V, V_DS= 80V,ƒ =1.0MHz

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Continuous Source Current

(Body Diode)

I_S

––– ––– 124

––– ––– 500

Pulsed Source Current

(Body Diode)

I_SM

V_SD

Diode Forward Voltage

––– –––

––– 75

1.3

T_J= 25°C,I_S= 74A,V_GS= 0V 

t_rr

Reverse Recovery Time

Reverse Recovery Charge

112

T_J= 25°C ,I_F= 74A,V_DD= 50V

Q_rr

––– 220 330

di/dt = 100A/µs 

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%

2016-10-14

IRF7769L1TRPbF

Absolute Maximum Ratings

Symbol

P_D@T_C= 25°C Power Dissipation 

P_D@T_C= 100°C Power Dissipation 

Parameter

Max.

125

Units

Power Dissipation 

3.3

P_D@T_A= 25°C

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

270

T_P

-55 to + 175

T_J

T_STG

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient 

–––

12.5

R_qJA

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Can 

Junction-to-PCB Mounted

–––

1.2

R_qJA

°C/W

R_qJA

R_qJC

R_qJA-PCB

–––

0.4

0.1

D = 0.50

0.20

Ri (°C/W)

0.1080

i (sec)

0.10

0.05

R₁

R₂

R₃

R₄

0.000171

0.053914

0.006099

0.036168



^J_J



0.02

0.01

^C_C



¹₁



0.6140

0.4520

²₂

³₃

⁴₄

0.01

Ci= iRi

1.47e-05

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 3. Maximum Eﬀecꢀve Transient Thermal Impedance, Juncꢀon‐to‐Case

Notes:

 Used double sided cooling, mounting pad with large heatsink.

 Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 Surface mounted on 1 in. square Cu board, steady state.

 T_Cmeasured with thermocouple incontact with top (Drain) of part.

 Repetitive rating; pulse width limited by max. junction temperature.

 R_is measured at T_Jof approximately 90°C.

 Mounted on minimum footprint full size board with metalized

back and with small clip heatsink (still air)

 Surface mounted on 1 in. square Cu

board (still air).

2016-10-14

IRF7769L1TRPbF

1000

100

1000

100

VGS

15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

3.5V

VGS

15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

3.5V

TOP

BOTTOM

3.5V

 60µs PULSE WIDTH

Tj = 175°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

1000

= 74A

= 25V

 60µs PULSE WIDTH

= 10V

100

= 175°C

= 25°C

= -40°C

0.1

-60 -40 -20

20 40 60 80 100 120 140 160 180

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

100000

= 0V,

f = 1 MHZ

I = 74A

= C + C , C SHORTED

iss

gd ds

= 80V

= 50V

= 20V

= C

rss

= C + C

oss

Ciss

10000

1000

100

Coss

Crss

100

150

200

250

300

, Drain-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 8. Typical Capacitance vs. Drain-to-Source Voltage

2016-10-14

IRF7769L1TRPbF

1000

100

10000

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 175°C

= 25°C

= -40°C

100µsec

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

= 0V

0.1

0.2

0.4

0.6

0.8

1.0

1.2

100

1000

, Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 11. Maximum Safe Operating Area

Fig 10. Typical Source-Drain Diode Forward Voltage

4.0

125

= 1.0A

= 1.0mA

= 250µA

3.5

3.0

2.5

2.0

1.5

1.0

0.5

100

-75 -50 -25

25 50 75 100 125 150 175

, Temperature ( °C )

100

125

150

175

, CaseTemperature (°C)

Fig 12. Maximum Drain Current vs. Case Temperature

Fig 13. Typical Threshold Voltage vs. Junction Temperature

1200

TOP

13A

20A

74A

1000

800

600

400

200

BOTTOM

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

2016-10-14

IRF7769L1TRPbF

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs. Pulse width

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 )

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

19a, 19b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

280

240

200

160

120

TOP

BOTTOM 1% Duty Cycle

= 74A

Single Pulse

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed

_jmax(assumed as 25°C in Figure 15, 16).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 3)

100

125

150

175

Starting T , Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 16. Maximum Avalanche Energy vs. Temperature

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

2016-10-14

IRF7769L1TRPbF

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 19a. Unclamped Inductive Test Circuit

Fig 19b. Unclamped Inductive Waveforms

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

2016-10-14

IRF7769L1TRPbF

DirectFET™ Board Footprint, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

Note: For the most current drawing please refer to website at http://www.irf.com/package/

2016-10-14

IRF7769L1TRPbF

DirectFET® Outline Dimension, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.360

0.280

0.236

0.026

0.024

0.048

0.040

0.030

0.017

0.057

0.104

0.215

0.029

0.007

0.003

9.05

6.85

5.90

0.55

0.58

1.18

0.98

0.73

0.38

1.35

2.55

5.35

0.68

0.09

0.02

9.15

7.10

6.00

0.65

0.62

1.22

1.02

0.77

0.42

1.45

2.65

5.45

0.74

0.17

0.08

0.356

0.270

0.232

0.022

0.023

0.046

0.039

0.029

0.015

0.053

0.100

0.211

0.027

0.003

0.001

DirectFET^™Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to website at http://www.irf.com/package/

2016-10-14

IRF7769L1TRPbF

DirectFET^™Tape & Reel Dimension (Showing component orientation).

LOADED TAPE FEED DIRECTION

NOTE:

Controlling dimensions in mm

Std reel quantity is 4000 parts. (ordered as IRF7769L1TRPBF).

REEL DIMENSIONS

DIMENSIONS

METRIC

STANDARD OPTION (QTY 4000)

IMPERIAL

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

MAX

0.476

0.161

0.642

0.299

0.291

0.398

N.C

MIN

MAX

12.10

4.10

CODE

MIN

MAX

N.C

MIN

MAX

N.C

4.69

11.90

3.90

15.90

7.40

7.20

9.90

1.50

12.992

0.795

0.504

0.059

3.900

N.C

330.00

20.20

12.80

1.50

0.154

0.623

0.291

0.283

0.390

0.059

N.C

0.520

N.C

13.20

N.C

16.30

7.60

99.00

N.C

3.940

0.880

0.720

0.760

100.00

22.40

18.40

19.40

7.40

10.10

N.C

0.650

0.630

16.40

15.90

0.063

1.60

Note: For the most current drawing please refer to website at http://www.irf.com/package/

Qualification Information

Industrial *

(per JEDEC JESD47F^†guidelines)

Qualification Level

MSL1

DirectFET (Large -Can)

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^†)

Yes

†

Applicable version of JEDEC standard at the time of product release.

Industrial qualification standards except autoclave test conditions.

2016-10-14

IRF7769L1TRPbF

Revision History

Date

Comments

2/13/2013

 TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document

 Changed datasheet with “Infineon” logo –all pages.

 Corrected Outline Dimension, L8 Outline on page 9.

 Added disclaimer on last page.

10/14/2016

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

2016-10-14

IRF7769L1 [INFINEON]

相关型号：

IRF7769L1PBF

IRF7769L1PBF_15

IRF7769L1TRPBF

IRF7769L2TR1PBF

IRF7769L2TRPBF

IRF7779L2PBF

IRF7779L2PBF_15

IRF7779L2TR1PBF

IRF7779L2TRPBF

IRF7780MPBF

IRF7780MPBF_15

IRF7780MTRPBF