IRF7757 [INFINEON]
Power MOSFET(Vdss=20V); 功率MOSFET （ VDSS = 20V ）
| 型号： | IRF7757 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=20V) |
| 文件： | 总9页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94174
IRF7757
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
VDSS
20V
RDS(on) max (mΩ)
35@VGS = 4.5V
ID
4.8A
40@VGS = 2.5V
3.8A
l Available in Tape & Reel
l Common Drain Configuration
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
1
2
3
4
8
7
6
5
1 = S1
2 = G1
3 = S2
4 = G2
8 =
7 =
6 =
5 =
D
D
D
D
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
4.8
3.9
A
19
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.2
W
Power Dissipation
0.76
9.5
Linear Derating Factor
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
105
Units
°C/W
RθJA
www.irf.com
1
05/03/01
IRF7757
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
––– –––
––– –––
35
40
VGS = 4.5V, ID = 4.8A
VGS = 2.5V, ID = 3.8A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.8A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
0.60 ––– 1.2
11 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
V
S
Forward Transconductance
VDS = 16V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
VGS = -12V
ID = 4.8A
Qg
––– 15
23
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.5 –––
––– 4.8 –––
––– 9.5 –––
––– 9.2 –––
––– 36 –––
––– 14 –––
––– 1340 –––
––– 180 –––
––– 132 –––
nC VDS = 16V
VGS = 4.5V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
1.2
19
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.2A, VGS = 0V
TJ = 25°C, IF = 1.2A
––– 20
––– 10
30
15
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7757
1000
100
10
100
10
1
VGS
7.5V
VGS
7.5V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
BOTTOM 1.5V
1.5V
1
1.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
100.00
10.00
1.00
4.8A
=
I
D
1.5
T
= 150°C
J
1.0
0.5
0.0
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
GS
=4.5V
-60 -40 -20
0
20 40 60 80 100 120 140 160
1.5
2.0
2.5 3.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7757
10000
5
4
3
2
1
0
V
= 0V,
f = 1 MHZ
I
D
=
4.8A
V
V
= 16V
= 10V
GS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
1000
Coss
Crss
100
1
0
4
8
12
16
20
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
10msec
Tc = 25°C
V
= 0V
Tj = 150°C
Single Pulse
GS
0.10
0.1
0.1
0.5
0.9
1.2
1.6
2.0
0
1
10
100
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRF7757
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7757
0.05
0.050
0.040
0.030
0.020
V
= 2.5V
GS
0.04
0.03
0.02
I
= 4.8A
D
V
= 4.5V
GS
0
5
10
, Drain Current (A)
15
20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
V
Gate -to -Source Voltage (V)
D
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
12V
.3µF
VGS
+
Q
V
GS
GD
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
IRF7757
1.3
1.1
0.9
0.7
0.5
0.3
120
110
100
90
80
70
60
50
40
30
20
10
0
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
1.00
10.00
100.00
1000.00
T
, Temperature ( °C )
Time (sec)
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
www.irf.com
7
IRF7757
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
7702
PART NUMBER
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LTSSOP (MO-153AA)
Ø 13"
16 mm
16mm
FEED DIRECTION
NOT E S:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
8
www.irf.com
IRF7757
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
www.irf.com
9
相关型号：
IRF7769L1
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRF7769L2TR1PBF
Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
INFINEON
©2020 ICPDF网 联系我们和版权申明