IRF7755 [INFINEON]
Power MOSFET(Vdss=-20V); 功率MOSFET （ VDSS = -20V ）
| 型号： | IRF7755 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-20V) |
| 文件： | 总8页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -93995A
IRF7755
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
VDSS
-20V
RDS(on) max
51mΩ@VGS = -4.5V
ID
-3.7A
86mΩ@VGS = -2.5V
-2.8A
l Available in Tape & Reel
Description
8
7
6
5
1
2
3
4
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for
battery and load management.
1 = D1
8 = D2
7 = S2
6 = S2
5 = G2
2 = S1
3 = S1
4 = G1
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-3.9
-3.1
A
-15
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1
W
W
0.64
0.01
±20
W/°C
V
VGS
Gate-to-Source Voltage
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
125
°C/W
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1
4/9/01
IRF7755
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
––– 35.3 51
––– 44.3 86
-0.45 ––– -1.2
7.0 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -3.7A
VGS = -2.5V, ID = -2.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.7A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 11
17
ID = -3.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.1 –––
––– 3.5 –––
nC
ns
pF
VDS = -16V
VGS = -4.5V
–––
9
14
20
VDD = -10V, VGS = -4.5V
ID = -1.0A
––– 13
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 89 133
––– 61 92
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1090 –––
––– 182 –––
––– 124 –––
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -1.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
-15
–––
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
––– 55
––– 29
82
43
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7755
100
10
1
100
10
1
VGS
VGS
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
BOTTOM -1.5V
-1.5V
-1.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-3.9A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
°
T = 25 C
J
1
V
= -15V
DS
V
= -4.5V
20µs PULSE WIDTH
GS
0.1
1.0
1.5
2.0
2.5 3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7755
1600
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= -3.7A
GS
V
=-16V
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds gd
oss
1200
800
C
iss
6
4
400
2
C
C
oss
rss
0
1
0
10
100
0
4
8
12
16
20
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7755
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7755
0.160
0.120
0.080
0.040
0.000
0.200
0.150
0.100
0.050
0.000
VGS = -2.5V
I
= -3.7A
D
VGS = -4.5V
2.0
3.0
-V
4.0
5.0
6.0
7.0
8.0
0
5
10
15
Gate -to -Source Voltage (V)
GS,
-I , Drain Current ( A )
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
-
V
+
DS
10 V
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7755
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
7702
PART NUMBER
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LTSSOP (MO-153AA)
Ø 13"
16 mm
16mm
FEED DIRECTION
NOT E S:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
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7
IRF7755
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/01
8
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相关型号：
IRF7769L1
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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