IRF5N5210SCV [INFINEON]
Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN;
| 型号： | IRF5N5210SCV |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94154A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-1)
IRF5N5210
100V, P-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5N5210
-100V
0.060Ω -31A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-1
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-31
-19
D
D
GS
GS
C
A
I
= -10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
-124
125
DM
@ T = 25°C
P
D
Max. Power Dissipation
W
W/°C
V
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
340
mJ
A
AS
I
-19
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
12.5
-4.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
2.6 (Typical)
For footnotes refer to the last page
www.irf.com
1
09/23/08
IRF5N5210
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.11
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.06
Ω
V
= -10V, I = -19A
D
Ã
DS(on)
GS
V = V , I = -250µA
DS
V
g
-2.0
10
—
—
—
—
—
-4.0
—
-25
-250
V
S
GS(th)
fs
GS D
V
V
= -15V, I
= -19A Ã
DS
DS
DS
I
= -100V ,V = 0V
DSS
GS
= -80V,
µA
—
V
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
215
30
115
28
150
103
116
—
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-10V, I = -19A
V
g
gs
gd
d(on)
r
GS
D
= -80V
DS
t
t
t
t
V
DD
V
= -50V, I = -19A,
=-10V, R = 2.5Ω
GS G
D
ns
d(off)
f
L
+ L
S
D
Measured from the center of
nH
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
830
470
—
—
—
V
= 0V, V
= -25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-31
-124
-1.6
290
2.1
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = -19A, V
= 0V Ã
j
S
GS
T = 25°C, I = -19A, di/dt ≤ -100A/µs
j
F
V
≤ -50V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.0
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRF5N5210
1000
100
10
1000
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM-4.5V
BOTTOM -4.5V
-4.5V
-4.5V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
-31A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
= -50V
V
DS
V
=-10V
20µs PULSE WIDTH
GS
1
4
6
8
10 12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5N5210
6000
5000
4000
3000
2000
1000
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= -19A
GS
C
= C + C
gs
C
SHORTED
iss
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
gd
= C + C
ds
rss
C
oss
gd
C
iss
C
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
40
80
120
160 200
240
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
°
T = 25 C
J
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
1.4
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5N5210
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
Fig 9. Maximum Drain Current Vs.
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.1
t
1
0.05
t
2
0.02
SINGLE PULSE
0.01
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5N5210
800
600
400
200
0
I
D
L
V
DS
TOP
-8.5A
-12A
BOTTOM -19A
D.U.T
AS
R
G
V
DD
A
I
DRIVER
V
-20V
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
1
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5N5210
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ -19A, di/dt ≤ -390 A/µs,
SD
maximum junction temperature.
V
≤ -100V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= -25 V, Starting T = 25°C, L = 1.9mH
DD
Peak I
J
= -19A, V
GS
= -10V, R = 25Ω
G
AS
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2008
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7
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