IPS7091SPBF [INFINEON]
INTELLIGENT POWER HIGH SIDE SWITCH; 智能电源高压侧开关
| 型号： | IPS7091SPBF |
| 厂家： | 
Infineon |
| 描述： | INTELLIGENT POWER HIGH SIDE SWITCH |
| 文件： | 总14页 (文件大小：786K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data sheet N° 60291 revB
IPS7091(G)(S)PbF
INTELLIGENT POWER HIGH SIDE SWITCH
Features
Product Summary
•
•
•
•
•
•
•
•
Over temperature shutdown (with auto-restart)
Short circuit protection (current limit)
Active clamp
Open load detection
Logic ground isolated from power ground
ESD protection
Ground loss protection
Status feedback
Rds(on)
Vclamp
I Limit
120mΩ max.
70V
5A (typ.)
Open load 3V
Package
Description
The IPS7091(G)(S)PbF is a five terminal Intelligent Power
Switch (IPS) with built in short circuit, over-temperature,
ESD protection, inductive load capability and diagnostic
feedback. The output current is limited at Ilim value.
Current limitation is activated until the thermal protection
acts. The over-temperature protection turns off the device
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7°C
below Tshutdown. A diagnostic pin is provided for status
feedback of short circuit, over-temperature and open load
detection. The double level shifter circuitry allows large
offsets between the logic ground and the load.
TO220
D2-Pak
SO-8
IPS7091PbF IPS7091SPbF IPS7091GPbF
Typical Connection
+5V
+Bat
Vcc(5-6-7-8)
15K
Dg(3)
Control
Rdg
Pull-up resistor for Open
Load Off detection
Out(4)
Load
In(2)
Gnd(1)
V Diag
Rin
Input Signal
1
www.irf.com
IPS7091(G)(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vout
Parameter
Maximum output voltage
Min. Max. Units
Vcc-65 Vcc+0.3
Voffset
Vin
Maximum logic ground to load ground offset
Maximum input voltage
Maximum Vcc voltage
Maximum continuous Vcc voltage
Maximum IN current
Maximum diagnostic output current
Maximum diagnostic output voltage
Maximum power dissipation (internally limited by thermal protection)
Rth=100°C/W
Maximum continuous diode current (Rth=100°C/W)
Electrostatic discharge voltage (Human body) 100pF, 1500Ω
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω,L=10µH
Max. storage & operating temperature junction temperature
Vcc-65 Vcc+0.3
V
-0.3
⎯
⎯
-1
-1
5.5
65
35
10
10
5.5
Vcc max.
Vcc cont.
Iin max.
Idg max.
Vdg
mA
V
-0.3
Pd
⎯
1.25
W
A
Isd cont.
ESD1
ESD2
⎯
⎯
1.8
4
kV
°C
⎯
-40
0.5
+150
Tj max.
Thermal Characteristics
Symbol
Rth1
Parameter
Typ. Max. Units
Thermal resistance junction to ambient SO8 std. footprint
Thermal resistance junction to ambient TO220 free air
Thermal resistance junction to ambient D2Pak std. footprint
Thermal resistance junction to ambient D2Pak 1” sqrt. footprint
Thermal resistance junction to case D2pak/TO220
100
60
60
40
4
⎯
⎯
⎯
⎯
⎯
Rth1
Rth1
Rth2
Rth3
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH
VIL
Iout
Rin
Parameter
High level input voltage
Low level input voltage
Continuous drain current, Tamb=85°C, Tj=125°C, Vin=5V, Rth=100°C/W
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Recommended pull-up resistor for open load detection
Min. Max. Units
4
-0.3
⎯
10
10
5
5.5
0.9
1.5
20
A
kΩ
Rdgs
Rol
20
100
2
www.irf.com
IPS7091(G)(S)PbF
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
⎯
⎯
⎯
6
ON state resistance Tj=25°C
ON state resistance Tj=150°C
ON state resistance Tj=25°C, Vcc=6.5V
Operating voltage range
Vcc to Out clamp voltage 1
Vcc to Out clamp voltage 2
Body diode forward voltage
Supply current when Off
80
150
90
⎯
120
230
130
35
Vin=5V, Iout=2A
Vin=5V, Iout=2A
Vin=5V, Iout=2A
Rds(on)
mΩ
Vcc op.
V clamp 1
V clamp 2
Vf
Icc Off
Icc On
Iout@0V
Iout@6V
Idg leakage
Vdgl
Vih
Vil
In hys
UV high
UV low
UV hys
Iin On
⎯
75
1.35
10
3.5
10
⎯
10
65
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
70
70
1
2.5
2.5
⎯
20
⎯
0.2
2.5
2
Iout=30mA (see Fig. 1)
Iout=1A (see Fig. 1)
Iout= 2.5A
Vin=0V, Vout=0V
Vin=5V
Vout=0V
Vout=6V
Vdg=5.5V
Idg=1.6mA
V
µA
mA
Supply current when On
Output leakage current
Output leakage current
µA
Diagnostic output leakage current
Low level diagnostic output voltage
Input high threshold voltage
Input low threshold voltage
Input hysteresis
Under voltage high threshold voltage
Under voltage low threshold voltage
Undervoltage hysteresis
0.3
3.5
⎯
0.15
⎯
3.4
0.1
⎯
0.4
5
4.5
0.8
40
1
5.9
⎯
1.5
80
V
Input current when device is On
µA
Vin=5V
Switching Electrical Characteristics
Vcc=14V, Resistive load=14Ω, Vin=5V, Tj=25°C
Symbol
Tdon
Tr1
Tr2
dV/dt (On)
EOn
Tdoff
Tf
dV/dt (Off)
EOff
Tdiag
Parameter
Min. Typ. Max. Units Test Conditions
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-on delay time
Rise time to Vout=Vcc-5V
Rise time to Vout=0.9 x Vcc
Turn On dV/dt
12
7
35
40
50
3.5
⎯
45
25
5.5
⎯
µs
14
0.95
250
20
6
1.8
20
15
V/µs
µJ
See Fig. 3
Turn On energy
Turn-off delay time
Fall time to Vout=0.1 x Vcc
Turn Off dV/dt
Turn Off energy
Vout to Vdiag propagation delay
µs
V/µs
µJ
µs
⎯
See Fig. 4 and Fig. 12
3
www.irf.com
IPS7091(G)(S)PbF
Protection Characteristics
Symbol
Ilim
Parameter
Min. Typ. Max. Units
Test Conditions
Vout=0V
Internal current limit
2
150(1)
⎯
5
165
158
3
8
⎯
⎯
4
A
Tsd+
Tsd-
Vsc
Over temperature high threshold
Over temperature low threshold
Short-circuit detection voltage (2)
°C
See Fig. 2
2
V
2
Vopen load Open load detection threshold
3
4
(1) Guaranteed by design
(2) Reference to Vcc
Truth Table
Operating Conditions
Normal
IN
H
L
OUT
H
L
DG pin
H
L
Normal
Open Load
H
L
H
L
H
L
H
H
H
H
L
L
L
Open Load (3)
Short circuit to Gnd
Short circuit to Gnd
Over-temperature
Over-temperature
L (limiting)
L
L (cycling)
L
L
(3) With a pull-up resistor connected between the output and Vcc.
Lead Assignments
3- Vcc
8 7 6 5
3- Vcc
1- Gnd
2- In
1- Gnd
2- In
3- Vcc
4- Dg
5- Out
3- DG
4- Out
5-6-7-8 Vcc
1 2 3 4
SO8
1 2 3 4 5
D²Pak
1 2 3 4 5
TO220
4
www.irf.com
IPS7091(G)(S)PbF
Functional Block Diagram
All values are typical
VCC
165°C
158°C
Tj
66V
Charge
Pump
75V
Vcc-Gnd >UV
Level
Shifter
75V
2.5V
2.0V
Driver
IN
6V
-
Gnd Loss Protection
+
I Sense
I Limit
-
Open Load
DG
+
6V
-
3V
Short Circuit
+
3V
GND
OUT
5
www.irf.com
IPS7091(G)(S)PbF
T clamp
Vin
Vin
Ids
Iout
limiting
Thermal cycling
Ilim
Vds clamp
Tj
Tsd+
Tsd-
Vds
Vcc
See Application Notes to evaluate power dissipation
Figure 1 – Active clamp waveforms
Figure 2 – Protection timing diagram
90%
Vin
Vih
Vin
Vil
10%
Vout
Vcc
Vcc - Vsc
90%
Vcc-5V
Vout
10%
Vol
Td off
Td on
Tr1
Tf
Vdg
Tr2
Vds
Blanking
Diag OFF
Blanking
Diag ON
Tdiag
Figure 3 – Switching times definition
Figure 4 – Diagnostic delay definition
6
www.irf.com
IPS7091(G)(S)PbF
10
Dg
In
Vcc
Out
Vclamp
L
1
Gnd
+
14V
-
5V
0V
Vin
Vout
Rem :
During active
clamp,
Vload is
R
Iout
0.1
negative
1E+2
1E+3
1E+4
1E+5
1E+6
Load inductance (µH)
Figure 6 – Max. Output current (A) Vs Load
inductance (µH)
Figure 5 – Active clamp test circuit
100.0
10. 0
1. 0
5
4
3
2
1
0
0.1
-50
0
50
100
150
0.0001 0.001 0.01
0.1
1
10
100
Tamb, Ambient temperature (°C)
Time (s)
Figure 7 – Max. ouput current (A)
Vs Ambient temperature (°C)
Figure 8 – Transient thermal impedance (°C/W)
Vs time (s)
7
www.irf.com
IPS7091(G)(S)PbF
7
6
5
4
3
2
1
0
500
400
300
200
100
0
Eon
Eoff
0
1
2
3
4
-50
0
50
100
150
Tj, junction temperature (°C)
Iout, Output current (A)
Figure 9 –I limit (A)
Vs junction temperature (°C)
Figure 10 – Switching energy (µJ)
Vs Output current (A)
200%
150%
100%
50%
60
50
40
30
20
10
0
Tdiag on
Tdiagoff
-50
0
50
100
150
0
1
2
3
Tj, junction temperature (°C)
Output current (A)
Figure 12 – Diagnosis Blanking time (µs)
Figure 11 - Normalized Rds(on) (%) Vs Tj (°C)
Vs Output current (A)
8
www.irf.com
IPS7091(G)(S)PbF
1.E+4
1.E+3
1.E+2
1.E+1
1.E+0
1.E+4
1.E+3
1.E+2
1.E+1
1.E+0
Icc on
Icc off
Icc on
Icc off
0
5
10
15
20
25
30
35
-50
0
50
100
150
Vcc, power supply voltage (V)
Tj, junction temperature (°C)
Figure 13 – Icc on/ Icc off (µA) Vs Vcc (V)
Figure 14 – Icc on/ Icc off (µA) Vs Tj (°C)
9
www.irf.com
IPS7091(G)(S)PbF
Case outline - TO220
10
www.irf.com
IPS7091(G)(S)PbF
Case outline – D²Pak
11
www.irf.com
IPS7091(G)(S)PbF
Tape and reel – D²Pak
12
www.irf.com
IPS7091(G)(S)PbF
Case Outline - SO-8
13
www.irf.com
IPS7091(G)(S)PbF
Tape & Reel - SO-8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice.
TO220 and D2PaK are MSL1 qualified. SO8 is MSL2 qualified.
This product has been designed and qualified for the Automotive [Q100] market.
02/02/2007
14
www.irf.com
相关型号：
IPS70R2K0CEAKMA1
Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
IPS70R900P7S
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：
INFINEON
IPS80R2K0P7AKMA1
Power Field-Effect Transistor, 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
IPS80R2K4P7AKMA1
Power Field-Effect Transistor, 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
IPS80R600P7AKMA1
Power Field-Effect Transistor, 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
IPS80R750P7AKMA1
Power Field-Effect Transistor, 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
IPS80R900P7AKMA1
Power Field-Effect Transistor, 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明