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IPS70R2K0CEAKMA1 [INFINEON]

Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3;
IPS70R2K0CEAKMA1
型号： IPS70R2K0CEAKMA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

开关 脉冲 晶体管
文件： 总14页 (文件大小：1073K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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IPS70R2K0CE  
MOSFET  
IPAKꢀSL  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
tab  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa  
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive  
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest  
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand  
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀuse/drive  
Drain  
Pin 2, Tab  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Gate  
Pin 1  
Applications  
Source  
Pin 3  
(QR)ꢀFlybackꢀinꢀlowꢀpowerꢀchargersꢀforꢀmobileꢀdevicesꢀandꢀpowerꢀtools  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
ID,typ  
Value  
750  
2000  
4
Unit  
V
mΩ  
A
Qg.typ  
7.8  
nC  
A
ID,pulse  
6.3  
Eoss@400V  
0.85  
µJ  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPS70R2K0CE  
PG-TO 251  
70S2K0CE  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
4
2.6  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAR  
-
-
-
-
-
-
-
-
-
-
-
-
-
6.3  
11  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
mJ  
mJ  
A
ID=0.4A; VDD=50V; see table 10  
-
0.07  
0.4  
50  
ID=0.4A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
-
V/ns VDS=0...480V  
-20  
-30  
-
20  
V
static;  
30  
V
AC (f>1 Hz)  
TC=25°C  
-
42  
W
°C  
°C  
A
Storage temperature  
Tstg  
Tj  
-40  
-40  
-
150  
150  
2.9  
6.3  
Operating junction temperature  
Continuous diode forward current  
Diode pulse current2)  
-
IS  
TC=25°C  
TC=25°C  
IS,pulse  
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
dif/dt  
-
-
-
-
15  
V/ns  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
500  
A/µs  
1) Limited by Tj max. Maximum duty cycle D=0.5  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
2.95  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
700  
2.5  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
3.0  
3.5  
VDS=VGS,ꢀID=0.07mA  
-
-
-
10  
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C  
VDS=700V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
1.80  
4.68  
2.00  
-
VGS=10V,ꢀID=1A,ꢀTj=25°C  
VGS=10V,ꢀID=1A,ꢀTj=150°C  
RDS(on)  
RG  
-
6.5  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
163  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
14  
Effective output capacitance,  
energy related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
10  
33  
6.4  
9
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...480V  
Effective output capacitance,  
time related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...480V  
VDD=400V,ꢀVGS=13V,ꢀID=1.1A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=1.1A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=1.1A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
25  
27  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=1.1A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=480V,ꢀID=1.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=1.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=1.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=1.1A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
4.3  
Qg  
7.8  
Gate plateau voltage  
Vplateau  
5.4  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=1.1A,ꢀTj=25°C  
VR=400V,ꢀIF=1.1A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
187  
0.8  
7
-
-
-
ns  
VR=400V,ꢀIF=1.1A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=1.1A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
45  
101  
1 µs  
10 µs  
40  
35  
30  
25  
20  
15  
10  
5
100 µs  
1 ms  
100  
10-1  
10-2  
10-3  
DC  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
101  
101  
1 µs  
10 µs  
100 µs  
100  
10-1  
10-2  
10-3  
1 ms  
0.5  
DC  
100  
0.2  
0.1  
0.05  
0.02  
0.01  
single pulse  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
7
4
20 V  
20 V  
10 V  
6
5
4
3
2
1
0
10 V  
8 V  
3
2
1
0
8 V  
7 V  
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
7.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
6.5  
6.0  
5 V  
5.5 V  
6 V  
6.5 V  
7 V  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
10 V  
98%  
typ  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
1
2
3
4
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=1.0ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
7
10  
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
25 °C  
120 V  
480 V  
150 °C  
0
2
4
6
8
10  
12  
0
1
2
3
4
5
6
7
8
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=1.1ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
12  
25 °C  
125 °C  
11  
10  
9
101  
8
7
6
5
100  
4
3
2
1
10-1  
0
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=0.5ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
790  
104  
770  
750  
730  
710  
690  
670  
650  
630  
103  
Ciss  
102  
Coss  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1.0ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
1.30  
1.20  
1.10  
1.00  
0.90  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00003329  
MILLIMETERS  
DIM  
INCHES  
0
MIN  
2.18  
0.80  
0.64  
0.65  
4.95  
0.46  
0.46  
5.97  
5.04  
6.35  
4.60  
MAX  
2.40  
1.14  
0.89  
1.15  
5.50  
0.59  
0.89  
6.22  
5.55  
6.73  
5.21  
MIN  
MAX  
0.094  
0.045  
0.035  
0.045  
0.217  
0.023  
0.035  
0.245  
0.219  
0.265  
0.205  
SCALE  
A
A1  
b
0.086  
0.031  
0.025  
0.026  
0.195  
0.018  
0.018  
0.235  
0.198  
0.250  
0.181  
2.0  
0
2.0  
b2  
b4  
c
4mm  
c2  
D
EUROPEAN PROJECTION  
D1  
E
E1  
e
2.29  
4.57  
3
0.090  
0.180  
3
e1  
N
ISSUE DATE  
21-10-2015  
L
3.00  
0.80  
0.88  
3.60  
1.25  
1.28  
0.118  
0.031  
0.035  
0.142  
0.049  
0.050  
REVISION  
L1  
L2  
06  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀCEꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀCEꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀCEꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2016-03-07  
700VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPS70R2K0CE  
RevisionꢀHistory  
IPS70R2K0CE  
Revision:ꢀ2016-03-07,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2016-03-07  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2016-03-07  

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