IPS70R900P7S [INFINEON]
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：;
| 型号： | IPS70R900P7S |
| 厂家： | 
Infineon |
| 描述： | 顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择： 手机 电脑 |
| 文件： | 总13页 (文件大小：940K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPS70R900P7S
MOSFET
IPAKꢀSL
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2, Tab
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀExcellentꢀthermalꢀbehavior
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
Gate
Pin 1
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard
)
Source
Pin 3
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,
Adapters,ꢀLightingꢀApplications,ꢀetc.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Value
700
0.9
Unit
V
Ω
Qg,typ
6.8
nC
A
ID,pulse
12.8
0.9
Eoss @ 400V
V(GS)th,typ
µJ
V
3
ESD class (HBM)
1C
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPS70R900P7S
PG-TO 251-3
70S900P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
6.0
3.5
TC = 20°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TC = 100°C
ID,pulse
IAS
-
-
-
-
-
-
12.8
3.6
A
A
TC=25°C
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 5µH
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
100
V/ns VDSꢀ=0...400V
-16
-30
-
-
16
30
static;
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
30.5
150
4.1
12.8
1
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt4)
Maximum diode commutation speed4) dif/dt
Tj,ꢀTstg
IS
-40
-
-
-
-
-
TC=25°C
TC = 25°C
IS,pulse
A
dv/dt
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
50
Insulation withstand voltage VISO
n.a.
V
Vrms, TC=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4.1
Thermal resistance, junction
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
2.50
3
3.50
VDS=VGS,ꢀID=0.06mA
-
-
-
10
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C
VDS=700V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
µA
Gate-source leakage current incl. Zener
diode
IGSS
RDS(on)
RG
-
-
1
VGS=20V,ꢀVDS=0V
-
-
0.74
1.53
0.90
-
VGS=10V,ꢀID=1.1A,ꢀTj=25°C
VGS=10V,ꢀID=1.1A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1.6
-
f=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
211
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
5
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
13
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
177
12
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
4.7
58
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
31
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
2.6
Qg
6.8
Gate plateau voltage
Vplateau
4.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=1.4A,ꢀTj=25°C
Reverse recovery time
160
0.5
ns
µC
A
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
7
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
40
102
35
30
25
20
15
10
5
1 µs
101
100
10 µs
100 µs
1 ms
10 ms
10-1
10-2
10-3
DC
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
1 µs
10 µs
0.5
0.2
100 µs
1 ms
100
0.1
10 ms
DC
10-1
10-2
10-3
0.05
0.02
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
14
10
20 V
20 V
10 V
10 V
8 V
9
8
7
6
5
4
3
2
1
0
8 V
12
7 V
7 V
10
6 V
6 V
5.5 V
8
6
5.5 V
5 V
4
5 V
4.5 V
2
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
6
2.00
1.80
1.60
1.40
5
5.5 V
5 V
6.5 V
6 V
4
3
2
1
0
98%
1.20
1.00
typ
7 V
10 V
0.80
0.60
0.40
0.20
0.00
0
5
10
15
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=1.1ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
14
10
9
8
25 °C
12
10
7
6
5
4
3
2
1
0
120 V
400 V
8
150 °C
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
102
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
101
100
10-1
0.0
0.5
1.0
1.5
2.0
-75 -50 -25
0
25
50
75 100 125 150 175
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
103
Ciss
102
101
Coss
100
Crss
10-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00181052
MILLIMETERS
DIM
INCHES
0
MIN
2.20
0.90
0.64
0.65
5.20
0.46
0.46
5.98
5.00
6.35
4.63
MAX
2.40
1.14
0.89
1.15
5.50
0.60
0.60
6.22
5.60
6.73
5.21
MIN
MAX
0.094
0.045
0.035
0.045
0.217
0.024
0.024
0.245
0.220
0.265
0.205
SCALE
A
A1
b
0.087
0.035
0.025
0.026
0.205
0.018
0.018
0.235
0.197
0.250
0.182
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
06-04-2016
L
3.30
0.85
0.88
3.60
1.25
1.28
0.130
0.033
0.035
0.142
0.049
0.050
REVISION
L1
L2
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R900P7S
RevisionꢀHistory
IPS70R900P7S
Revision:ꢀ2018-02-13,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2016-11-24
2018-02-13
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AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
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Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-13
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