IPS80R2K4P7AKMA1 [INFINEON]
Power Field-Effect Transistor, 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3;
| 型号： | IPS80R2K4P7AKMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：1134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPS80R2K4P7
MOSFET
IPAKꢀSL
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
tab
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
Features
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀDPAKꢀRDS(on)
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability;ꢀqualifiedꢀforꢀindustrial
gradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20ꢀandꢀJESD22)
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Gate
Pin 1
Benefits
•ꢀBest-in-classꢀperformance
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
Source
Pin 3
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Applications
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications
andꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
800
2.4
8
Unit
V
Ω
nC
A
ID
2.5
0.74
3
Eoss @ 500V
VGS(th),typ
µJ
V
ESD class (HBM)
1C
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPS80R2K4P7
PG-TO 251-3
80R2K4P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
2.5
1.7
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
-
-
5.3
4
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
mJ
mJ
A
ID=0.3A; VDD=50V
ID=0.3A; VDD=50V
-
EAR
0.04
0.3
100
IAR
dv/dt
V/ns VDS=0ꢀtoꢀ400V
-20
-30
-
-
20
30
static;
V
Gate source voltage
VGS
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
22
150
1.9
5.0
1
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3) dif/dt
Tj,ꢀTstg
IS
-55
-
-
-
-
TC=25°C
TC=25°C
IS,pulse
A
dv/dt
V/ns VDS=0ꢀtoꢀ400V,ꢀISD<=0.4A,ꢀTj=25°C
A/µs VDS=0ꢀtoꢀ400V,ꢀISD<=0.4A,ꢀTj=25°C
50
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
5.6
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG;ꢀꢀtcond<2µs
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.04mA
-
-
-
10
1
-
VDS=800V,ꢀVGS=0V,ꢀTj=25°C
VDS=800V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
Gate-source leakage curent incl. zener
diode
IGSS
RDS(on)
RG
-
-
1
µA
VGS=20V,ꢀVDS=0V
-
-
2.0
5.3
2.4
-
VGS=10V,ꢀID=0.8A,ꢀTj=25°C
VGS=10V,ꢀID=0.8A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
4.0
-
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
150
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
Coss
3.8
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
6
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0ꢀtoꢀ500V
Effective output capacitance, time
related2)
53
8
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ500V
VDD=400V,ꢀVGS=13V,ꢀID=0.82A,
RG=36Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.82A,
RG=36Ω
10
40
30
VDD=400V,ꢀVGS=13V,ꢀID=0.82A,
RG=36Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.82A,
RG=36Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=640V,ꢀID=0.82A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.82A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.82A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.82A,ꢀVGS=0ꢀtoꢀ10V
Qgd
3.4
Qg
7.5
Gate plateau voltage
Vplateau
4.5
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=0.82A,ꢀTf=25°C
Reverse recovery time
600
ns
µC
A
VR=400V,ꢀIF=0.41A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.41A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.41A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
2.5
5.6
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
25
102
20
15
10
5
101
10 µs
100 µs
1 µs
1 ms
10 ms
100
DC
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
0.5
10 µs
100 µs
1 ms
1 µs
10 ms
0.2
0.1
100
DC
100
0.05
0.02
0.01
10-1
10-2
10-3
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
7
4.0
20 V 10 V
8 V
10 V
20 V
8 V
7 V
7 V
6 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
5.5 V
5 V
6 V
5.5 V
4.5 V
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
10
6.6
6.2
5.8
5.4
5.0
4.6
4.2
5.5 V
6 V
6.5 V
7 V
5 V
10 V
9
8
7
6
5
4
3
2
98%
3.8
3.4
3.0
typ
2.6
2.2
1.8
1.4
1.0
0.6
0
2
4
6
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=0.82ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
6
10
9
8
7
25 °C
5
4
120 V
640 V
6
5
4
3
2
1
0
3
150 °C
2
1
0
0
2
4
6
8
10
12
0
2
4
6
8
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.82ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
5.0
25 °C
125 °C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
101
100
10-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=0.3ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
950
104
900
850
800
750
700
103
Ciss
102
101
Coss
100
Crss
10-1
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003329
MILLIMETERS
DIM
INCHES
0
MIN
2.20
0.80
0.64
0.65
5.20
0.46
0.46
6.00
5.04
6.45
4.60
MAX
2.35
1.14
0.89
1.15
5.50
0.59
0.89
6.22
5.55
6.70
5.10
MIN
MAX
0.093
0.044
0.033
0.045
0.217
0.023
0.023
0.245
0.219
0.264
0.201
SCALE
A
A1
b
0.087
0.031
0.026
0.026
0.205
0.018
0.018
0.236
0.198
0.254
0.181
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.28
4.56
3
0.090
0.180
3
e1
N
ISSUE DATE
01-04-2016
L
3.00
0.80
0.90
3.60
1.20
1.25
0.118
0.031
0.035
0.142
0.047
0.049
REVISION
L1
L2
07
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2017-06-07
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS80R2K4P7
RevisionꢀHistory
IPS80R2K4P7
Revision:ꢀ2017-06-07,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2017-06-07
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2017-06-07
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