IPS808-05I [IPS]
High sensitive triggering levels; 高灵敏度触发水平
| 型号： | IPS808-05I |
| 厂家： | 
IP SEMICONDUCTOR CO., LTD. |
| 描述： | High sensitive triggering levels |
| 文件： | 总4页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IP Semiconductor Co., Ltd.
IPS808-xxI
High sensitive triggering levels, the IPS808 series
SCRs is suitable for all applications, where the
available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in
low power supplies…
1. Cathode
RGK
2. Anode
3. Gate
IPAK(TO-251)
MAIN FEATURES
Symbol
IT(AV)
Value
8
Unit
A
VDRM / VRRM
IGT
800
V
≤ 100
uA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +110
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
VDRM
VRRM
800
800
V
RMS on–state current (180 conduction angle)
Tj = 105℃
IT(RMS)
IT(AV)
8
5
A
A
Average on-state current (180 conduction angle) Tj = 105℃
Non repetitive surge peak on–state Current (Tj = 25℃)
tp = 10ms
tp = 8.3ms
ITSM
70
73
A
I²t
24.5
50
A²s
I²t Value for fusing
tp = 10ms
Critical rate of rise of on state current (IG = 2 X IGT, tr≤100ns,
f = 50Hz, Tj = 110℃
dI/dt
A/us
IGM
4
1
A
Peak gate current
tp = 20us, Tj = 125℃
Tj = 125℃
Average gate power dissipation
PG(AV)
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPS808-xxI
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPS808-xxI
Symbol
Test Condition
Unit
05
MIN
20
IGT
uA
V
MAX
100
VD = 6V RL = 140Ω
VGT
MAX
MIN
0.8
0.1
VD=VDRM, RL=3.3KΩ, RGK = 220Ω
Tj = 125℃
VGD
V
IL
IH
IG = 1mA RGK = 1KΩ
MAX
MAX
MAX
MIN
6
mA
mA
V
IT = 50mA RGK = 1KΩ
5
VTM
dV/dt
IT = 16A tp = 380uS Tj = 25 ℃
VD = 65% VDRM RGK = 220Ω Tj = 125℃
VDRM = VRRM RGK = 220Ω Tj = 25℃
VDRM = VRRM RGK = 220Ω Tj = 125℃
1.6
5
V/us
uA
MAX
MAX
5
1
IDRM
RGK
mA
KΩ
6 ~ 35
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case(DC)
TO-251
20
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS808-xxI
PACKAGE MECHANICAL DATA
TO-251(IPAK)
Dimensions
Millimeters
Ref
Inches
Typ
Min
2.2
Typ
Max
Min
0.086
0.035
0.021
0.200
0.030
Max
0.095
0.043
0.026
0.212
0.033
A
A2
B
2.4
1.1
0.9
0.55
5.1
0.65
5.4
B2
B3
B4
C
0.76
0.85
0.32
0.013
0.45
0.48
6
0.62
0.62
6.2
0.017
0.019
0.236
0.252
0.173
0.630
0.35
0.024
0.024
0.244
0.264
0.185
0.658
0.37
C2
D
E
6.4
4.4
16
6.7
G
4.7
H
16.7
9.4
L
8.9
1.8
1.37
L1
L2
V1
1.9
0.071
0.054
0.075
0.059
1.5
4º
4º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS808-xxI
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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