IKW15T120XK_技术文档

IKW15T120

^

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

C

•

Approx. 1.0V reduced V_CE(sat)

and 0.5V reduced V_Fcompared to BUP313D

Short circuit withstand time – 10µs

Designed for :

•

G

E

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

P-TO-247-3-1

(TO-247AC)

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

•

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Package

TO-247AC

Ordering Code

IKW15T120

1200V

15A

1.7V

Q67040-S4516

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

V

A

30

15

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

-

45

V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

30

15

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

I_{Fpul s}

V_{G E}

t_SC

45

±20

10

V

µs

P_{t ot}

110

W

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

-40...+150

-55...+150

260

°C

T_stg

-

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_{t hJC}

R_{t hJCD}

R_{t hJA}

1.1

1.5

40

K/W

TO-247AC

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}V_{G E}=0V, I_C=0.5mA

1200

-

V

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=15A

T_j=25°C

-

1.7

2.0

2.2

-

T_j=125°C

T_j=150°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=15A

T_j=25°C

-

1.7

2.2

-

T_j=125°C

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{G E(t h)}

I_CES

I_C=0.6mA,V_CE=V_{G E}

5.0

5.8

6.5

V_CE=1200V,

mA

V_{G E}=0V

T_j=25°C

T_j=150°C

-

0.2

2.0

100

-

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CE=0V,V_{G E}=20V

V_CE=20V, I_C=15A

nA

S

10

Integrated gate resistor

R_{G int}

none

Ω

2

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

V_CE=25V,

V_{G E}=0V,

f=1MHz

V_CC=960V, I_C=15A

V_{G E}=15V

-

1100

100

50

-

pF

C_oss

C_rss

Q_Gate

85

nC

nH

A

Internal emitter inductance

L_E

TO-247AC

-

13

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C( SC)}

90

V_{G E}=15V,t_SC≤10µs

V_CC= 600V,

T_j= 25°C

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_{d( off)}

t_f

-

50

30

520

60

1.3

1.4

2.7

-

ns

T_j=25°C,

V_CC=600V,I_C=15A,

V_{G E}=-15/15V,

R_G=56Ω,

L_σ²⁾=180nH,

C_σ²⁾=39pF

E_on

E_off

E_{t s}

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

-

140

1.9

17

-

ns

µC

A

T_j=25°C,

V_R=600V, I_F=15A,

di_F/dt=600A/µs

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

230

A/µs

recovery current during t_b

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

²⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

3

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_{d( off)}

t_f

-

50

35

-

ns

T_j=150°C,

V_CC=600V,I_C=15A,

V_{G E}=-15/15V,

R_G= 56Ω

600

120

2.0

2.1

4.1

L_σ¹⁾=180nH,

C_σ¹⁾=39pF

E_on

E_off

E_{t s}

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

-

330

3.4

21

-

ns

µC

A

T_j=150°C

V_R=600V, I_F=15A,

di_F/dt=600A/µs

Q_rr

Diode peak reverse recovery current I_rrm

di_rr/dt

190

Diode peak rate of fall of reverse

A/µs

recovery current during t_b

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Preliminary / Rev. 1 Jul-02

4

Power Semiconductors

IKW15T120

^

TrenchStop Series

t_p=2µs

40A

30A

20A

10A

0A

10A

1A

10µs

T_C=80°C

50µs

T_C=110°C

I_c

150µs

500µs

I_c

20ms

DC

0,1A

10Hz

100Hz

1kHz

10kHz

100kHz

1V

10V

100V

1000V

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, T_C= 25°C,

(T_j≤ 150°C, D = 0.5, V_CE= 600V,

T_j≤150°C;V_GE=15V)

V_GE= 0/+15V, R_G= 56Ω)

100W

80W

60W

40W

20W

0W

20A

10A

0A

25°C

75°C

125°C

25°C

50°C

75°C

100°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

T_C, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≥ 15V, T_j≤ 150°C)

5

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

40A

30A

20A

10A

0A

40A

V_GE=17V

15V

30A

20A

10A

0A

13V

11V

9V

13V

11V

9V

7V

0V

1V

2V

3V

4V

5V

6V

0V

1V

2V

3V

4V

5V

6V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

40A

35A

30A

25A

20A

15A

3,0V

2,5V

2,0V

1,5V

1,0V

0,5V

0,0V

I_C=30A

I_C=15A

I_C=8A

I_C=5A

10A

T_J=150°C

5A

0A

25°C

-50°C

0°C

50°C

100°C

0V

2V

4V

6V

8V

10V

12V

V_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

6

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

t_d(off)

1µs

t_d(off)

t_f

100ns

10ns

1ns

t_f

t_d(on)

100ns

10ns

1ns

t_r

t_d(on)

t_r

0A

10A

20A

10Ω

35Ω

60Ω

85Ω

110Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=56ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=15A,

Dynamic test circuit in Figure E)

t_d(off)

7V

6V

5V

4V

3V

2V

1V

0V

max.

typ.

100ns

min.

t_f

t_d(on)

t_r

10ns

-50°C

0°C

50°C

100°C

150°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.6mA)

function of junction temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=15A, R_G=56ꢀ,

Dynamic test circuit in Figure E)

7

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

*) E_onand E_tsinclude losses

due to diode recovery

5 mJ

4 mJ

3 mJ

2 mJ

1 mJ

0 mJ

due to diode recovery

E_ts*

8,0mJ

6,0mJ

4,0mJ

2,0mJ

0,0mJ

E_on*

E_off

E_ts*

E_off

E_on*

5A

10A

15A

20A

25A

5Ω

30Ω

55Ω

80Ω

105Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=56ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=15A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

6mJ

4mJ

5mJ

4mJ

3mJ

E_ts*

3mJ

2mJ

E_off

2mJ

E_off

E_on*

1mJ

E_on*

0mJ

50°C

100°C

150°C

400V

500V

600V

700V

800V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=15A, R_G=56ꢀ,

Dynamic test circuit in Figure E)

(inductive load, T_J=150°C,

V_GE=0/15V, I_C=15A, R_G=56ꢀ,

Dynamic test circuit in Figure E)

8

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

C_iss

1nF

100pF

10pF

15V

10V

5V

240V

960V

C_oss

C_rss

0V

10V

20V

0nC

50nC

Q_GE, GATE CHARGE

100nC

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=15 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

15µs

10µs

5µs

125A

100A

75A

50A

25A

0A

0µs

12V

14V

16V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

(V_CE≤ 600V, T_j≤ 150°C)

9

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

V_CE

600V

400V

200V

600V

400V

200V

0V

30A

20A

10A

0A

30A

20A

10A

0A

I_C

V_CE

I_C

0V

0us

1us

1.5us

0.5us

1us

1.5us

0.5us

t, TIME

Figure 21. Typical turn on behavior

(V_GE=0/15V, R_G=56ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(V_GE=15/0V, R_G=56ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

10⁰K/W

D=0.5

0.2

0.1

R , ( K /W )

0.360

τ , ( s ) =

7.30*10^-2

8.13*10^-3

1.09*10^-3

1.55*10^-4

R₂

R , ( K /W )

0.121

0.2

τ , ( s ) =

1.73*10^-1

2.75*10^-2

2.57*10^-3

2.71*10^-4

R₂

0.477

0.434

0.372

0.1

0.224

0.381

0.05

10^-1K/W

R₁

0.226

0.05

R₁

0.02

0.01

single pulse

0.02

0.01

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

10^-2K/W

10µs

100µs

1ms

10ms

100ms

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

t_P, PULSE WIDTH

Figure 24. Diode transient thermal

(D = t_p/ T)

impedance as a function of pulse

width

(D=t_P/T)

10

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

600ns

500ns

400ns

300ns

200ns

100ns

0ns

T_J=150°C

T_J=25°C

3µC

2µC

1µC

T_J=150°C

T_J=25°C

0µC

200A/µs

400A/µs

600A/µs

800A/µs

400A/µs

600A/µs

800A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

Figure 23. Typical reverse recovery time as

a function of diode current slope

(V_R=600V, I_F=15A,

Dynamic test circuit in Figure E)

(V_R=600V, I_F=15A,

Dynamic test circuit in Figure E)

T_J=150°C

T_J=25°C

30A

-300A/µs

-200A/µs

-100A/µs

-0A/µs

25A

T_J=25°C

T_J=150°C

20A

15A

10A

5A

0A

200A/µs

400A/µs

600A/µs

800A/µs

200A/µs

400A/µs

600A/µs

800A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

di_F/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=600V, I_F=15A,

Dynamic test circuit in Figure E)

11

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

T_J=25°C

40A

30A

20A

10A

0A

150°C

2,0V

I_F=30A

15A

1,5V

1,0V

0,5V

0,0V

8A

5A

-50°C

0°C

50°C

100°C

0V

1V

2V

V_F, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

12

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

dimensions

TO-247AC

symbol

[mm]

[inch]

min

4.78

2.29

1.78

1.09

1.73

2.67

max

5.28

2.51

2.29

1.32

2.06

3.18

min

max

A

B

C

D

E

F

G

H

K

L

0.1882 0.2079

0.0902 0.0988

0.0701 0.0902

0.0429 0.0520

0.0681 0.0811

0.1051 0.1252

0.0299 max

0.8189 0.8331

0.6161 0.6358

0.2051 0.2252

0.7799 0.8142

0.1402 0.1941

0.1421

0.76 max

20.80

15.65

5.21

19.81

3.560

21.16

16.15

5.72

20.68

4.930

M

N

P

Q

3.61

6.12

6.22

0.2409 0.2449

13

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

t

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

90% I_{r r m}

V_R

Figure C. Definition of diodes

switching characteristics

τ₁

τ

r²₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L_σ=180nH

and Stray capacity C_σ=39pF.

Figure B. Definition of switching losses

14

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW15T120

^

TrenchStop Series

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

15

Preliminary / Rev. 1 Jul-02

Power Semiconductors


型号：	IKW15T120XK
厂家：	Infineon
描述：	暂无描述二极管瞄准线双极性晶体管快速恢复二极管
文件：	总15页 (文件大小：452K)
中文：	中文翻译
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