IKW20N60H3 [INFINEON]
High speed DuoPack : IGBT in Trench and Fieldstop technology; 高速DuoPack ： IGBT的沟槽场终止和技术
| 型号： | IKW20N60H3 |
| 厂家： | 
Infineon |
| 描述： | High speed DuoPack : IGBT in Trench and Fieldstop technology |
| 文件： | 总16页 (文件大小：1647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel diode
IKW20N60H3
600V high speed switching series third generation
Datasheet
Industrial & Multimarket
IKW20N60H3
High speed switching series third generation
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast
recovery anti-parallel diode
C
Features:
TRENCHSTOPTM technology offering
• very low VCEsat
• low EMI
• Very soft, fast recovery anti-parallel diode
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
G
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Key Performance and Package Parameters
Type
V†Š
I†
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà
1.95V 175°C
Marking
Package
IKW20N60H3
600V
20A
K20H603
PG-TO247-3
Rev. 1.2 2010-07-26
2
IKW20N60H3
High speed switching series third generation
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 4
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 6
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Rev. 1.2 2010-07-26
3
IKW20N60H3
High speed switching series third generation
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
600
V
DC collector current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
I†
40.0
20.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà
I†ÔÛÐÙ
-
80.0
80.0
A
A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C
Diode forward current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
IŒ
20.0
10.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà
Gate-emitter voltage
IŒÔÛÐÙ
V•Š
80.0
±20
A
V
Short circuit withstand time
V•Š = 15.0V, V†† ù 400V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 150°C
tȠ
µs
5
Power dissipation T† = 25°C
Power dissipation T† = 100°C
170.0
85.0
PÚÓÚ
W
Operating junction temperature
Storage temperature
TÝÎ
-40...+175
-55...+150
°C
°C
TÙÚÃ
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
RÚÌñÎ-Êò
RÚÌñÎ-Èò
0.88
1.89
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Rev. 1.2 2010-07-26
4
IKW20N60H3
High speed switching series third generation
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 2.00mA
600
-
-
V
V
V•Š = 15.0V, I† = 20.0A
TÝÎ = 25°C
Collector-emitter saturation voltage V†ŠÙÈÚ
TÝÎ = 125°C
-
-
-
1.95 2.40
2.30
2.50
-
-
TÝÎ = 175°C
V•Š = 0V, IŒ = 10.0A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 175°C
-
-
-
1.65 2.05
-
Diode forward voltage
VŒ
V
V
1.67
1.65
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 0.29mA, V†Š = V•Š
4.1
5.1
5.7
V†Š = 600V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
Zero gate voltage collector current I†Š»
-
-
-
-
40.0 µA
1000.0
Gate-emitter leakage current
Transconductance
I•Š»
gËÙ
V†Š = 0V, V•Š = 20V
V†Š = 20V, I† = 20.0A
-
-
-
100
-
nA
S
10.9
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Input capacitance
CÍþÙ
-
-
-
1100
70
-
-
-
Output capacitance
CÓþÙ
CØþÙ
V†Š = 25V, V•Š = 0V, f = 1MHz
pF
Reverse transfer capacitance
32
V†† = 480V, I† = 20.0A,
V•Š = 15V
Gate charge
Q•
LŠ
-
-
120.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
V•Š = 15.0V, V†† ù 400V,
t»† ù 5µs
TÝÎ = 150°C
I†ñ»†ò
-
-
A
120
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 25°C,
V†† = 400V, I† = 20.0A,
V•Š = 0.0/15.0V,
r• = 14.6Â, Lÿ = 75nH,
Cÿ = 30pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
17
23
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
194
11
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
0.56
0.24
0.80
mJ
mJ
mJ
Rev. 1.2 2010-07-26
5
IKW20N60H3
High speed switching series third generation
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 25°C,
Vç = 400V,
IΠ= 10.0A,
diŒ/dt = 1000A/µs
-
-
-
112
0.39
11.0
-
-
-
ns
µC
A
QØØ
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-750
-
A/µs
Switching Characteristic, Inductive Load, at TÝÎ = 175°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 175°C,
V†† = 400V, I† = 20.0A,
V•Š = 0.0/15.0V,
r• = 14.6Â, Lÿ = 75nH,
Cÿ = 30pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
16
21
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
227
14
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
0.71
0.36
1.07
mJ
mJ
mJ
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 175°C,
Vç = 400V,
IΠ= 10.0A,
-
-
-
191
0.91
14.2
-
-
-
ns
µC
A
QØØ
diŒ/dt = 1000A/µs
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-500
-
A/µs
Rev. 1.2 2010-07-26
6
IKW20N60H3
High speed switching series third generation
60
50
40
30
20
10
0
100
10
1
tÔ=1µs
10µs
50µs
100µs
200µs
500µs
DC
T†=80°
T†=110°
T†=80°
T†=110°
I
I
0.1
1
10
f, SWITCHING FREQUENCY [kHz]
100
1000
1
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
100
1000
Figure 1. Collector current as a function of switching
frequency
Figure 2. Forward bias safe operating area
(D=0, T†=25°C, TÎù175°C; V•Š=15V)
(TÎù175°C, D=0.5, V†Š=400V, V•Š=15/0V,
R•=14,6Â)
180
160
140
120
100
80
40
30
20
10
0
60
I
P
40
20
0
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
Figure 3. Power dissipation as a function of case
temperature
(TÎù175°C)
Figure 4. Collector current as a function of case
temperature
(V•Šú15V, TÎù175°C)
Rev. 1.2 2010-07-26
7
IKW20N60H3
High speed switching series third generation
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V•Š=20V
17V
15V
13V
11V
9V
V•Š=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
I
I
0
2
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
4
6
0
2
4
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
6
8
Figure 5. Typical output characteristic
(TÎ=25°C)
Figure 6. Typical output characteristic
(TÎ=175°C)
70
4.0
TÎ=25°C
TÎ=175°C
I†=10A
I†=20A
I†=40A
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
I
V
5
6
7
V•Š, GATE-EMITTER VOLTAGE [V]
8
9
10
11
12
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 7. Typical transfer characteristic
(V†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(V•Š=15V)
Rev. 1.2 2010-07-26
8
IKW20N60H3
High speed switching series third generation
1000
100
10
tÁñÓËËò
tË
tÁñÓÒò
tØ
tÁñÓËËò
tË
tÁñÓÒò
tØ
100
10
1
t
t
4
8
12
16
I†, COLLECTOR CURRENT [A]
20
24
28
32
36
40
5
10
15
20
R•, GATE RESISTOR [Â]
25
30
35
40
45
50
Figure 9. Typical switching times as a function of
collector current
Figure 10. Typical switching times as a function of
gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=14,6Â, test circuit in Fig.
E)
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=20A, test circuit in Fig. E)
6
typ.
min.
max.
tÁñÓËËò
tË
tÁñÓÒò
tØ
5
4
3
2
100
10
1
t
V
0
25 50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 11. Typical switching times as a function of
junction temperature
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=0.29mA)
(ind. load, V†Š=400V, V•Š=15/0V,
I†=20A, R•=14,6Â, test circuit in Fig. E)
Rev. 1.2 2010-07-26
9
IKW20N60H3
High speed switching series third generation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
EÓËË
EÓÒ*
EÚÙ*
EÓËË
EÓÒ*
EÚÙ*
E
E
4
8
12 16
I†, COLLECTOR CURRENT [A]
20
24
28
32
36
40
5
10
15
20
R•, GATE RESISTOR [Â]
25
30
35
40
45
50
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=14,6Â, test circuit in Fig.
E)
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=20A, test circuit in Fig. E)
1.25
1.50
EÓËË
EÓÒ*
EÚÙ*
EÓËË
EÓÒ*
EÚÙ*
1.25
1.00
0.75
0.50
0.25
0.00
1.00
0.75
0.50
0.25
0.00
E
E
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
200
250
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
300
350
400
450
Figure 15. Typical switching energy losses as a
function of junction temperature
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load, TÎ=175°C, V•Š=15/0V, I†=20A,
R•=14,6Â, test circuit in Fig. E)
(ind load, V†Š=400V, V•Š=15/0V, I†=20A,
R•=14,6Â, test circuit in Fig. E)
Rev. 1.2 2010-07-26
10
IKW20N60H3
High speed switching series third generation
16
14
12
10
8
120V
480V
1000
100
10
CÍÙÙ
CÓÙÙ
CØÙÙ
6
C
4
V
2
0
0
20
40
Q•Š, GATE CHARGE [nC]
60
80
100
120
140
0
10
20
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
30
Figure 17. Typical gate charge
(I†=20A)
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(V•Š=0V, f=1MHz)
300
250
200
150
100
50
15
12
9
6
3
t
I
0
10
12
14
V•Š, GATE-EMITTER VOLTAGE [V]
16
18
20
10
11
12
V•Š, GATE-EMITTER VOLTAGE [V]
13
14
15
Figure 19. Typical short circuit collector current as a
function of gate-emitter voltage
(V†Šù400V, start atTÎ=25°C)
Figure 20. Short circuit withstand time as a function
of gate-emitter voltage
(V†Šù400V, start at TÎù150°C)
Rev. 1.2 2010-07-26
11
IKW20N60H3
High speed switching series third generation
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.1
0.01
0.01
single pulse
single pulse
0.01
0.01
Z
Z
i:
1
2
3
4
i:
rÍ[K/W]: 0.4398 0.6662 0.4734 0.3169
Í[s]: 1.3E-4 1.1E-3 7.1E-3 0.04629
1
2
3
4
rÍ[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538
Í[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485
τ
τ
0.001
1E-6
0.001
1E-5
1E-4
tÔ, PULSE WIDTH [s]
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
tÔ, PULSE WIDTH [s]
0.1
1
Figure 21. IGBT transient thermal impedance
(D=tÔ/T)
Figure 22. Diode transient thermal impedance as a
function of pulse width
(D=tÔ/T)
250
1.00
TÎ=25°C, IF = 10A
TÎ=175°C, IF = 10A
TÎ=25°C, IF = 10A
TÎ=175°C, IF = 10A
200
150
100
50
0.75
0.50
0.25
0.00
t
Q
600
800
1000
1200
1400
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
1600
800 900 1000 1100 1200 1300 1400 1500 1600
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
Figure 23. Typical reverse recovery time as a
function of diode current slope
(Vç=400V)
Figure 24. Typical reverse recovery charge as a
function of diode current slope
(Vç=400V)
Rev. 1.2 2010-07-26
12
IKW20N60H3
High speed switching series third generation
18
16
14
12
10
8
0
-200
TÎ=25°C, IF = 10A
TÎ=175°C, IF = 10A
TÎ=25°C, IF = 10A
TÎ=175°C, IF = 10A
-400
I
-600
-800
-1000
-1200
-1400
t
d
/
I
d
I
6
800 900 1000 1100 1200 1300 1400 1500 1600
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
800 900 1000 1100 1200 1300 1400 1500 1600
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
Figure 25. Typical reverse recovery current as a
function of diode current slope
(Vç=400V)
Figure 26. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
(Vç=400V)
40
2.50
TÎ=25°C
TÎ=175°C
IŒ=5A
IŒ=10A
IŒ=20A
35
30
25
20
15
10
5
2.25
2.00
1.75
1.50
1.25
1.00
I
V
0
0.0
0.5
1.0
VŒ, FORWARD VOLTAGE [V]
1.5
2.0
2.5
3.0
3.5
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 27. Typical diode forward current as a
function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 1.2 2010-07-26
13
IKW20N60H3
High speed switching series third generation
PG-TO247-3
Rev. 1.2 2010-07-26
14
IKW20N60H3
High speed switching series third generation
Rev. 1.2 2010-07-26
15
IKW20N60H3
High speed switching series third generation
Revision History
IKW20N60H3
Revision: 2010-07-26, Rev. 1.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.1
1.2
2010-02-01
-
-
Preliminary datasheet
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devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Rev. 1.2 2010-07-26
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