IKW25N120T2 [INFINEON]

Low Loss DuoPack : IGBT in 2nd generation TrenchStop? with soft, fast recovery anti-parallel EmCon diode; 低损耗DuoPack ： IGBT在第二代TRENCHSTOP ？具有柔软，快速恢复反并联二极管EMCON


型号：	IKW25N120T2
厂家：	Infineon
描述：	Low Loss DuoPack : IGBT in 2nd generation TrenchStop? with soft, fast recovery anti-parallel EmCon diode 低损耗DuoPack ： IGBT在第二代TRENCHSTOP ？具有柔软，快速恢复反并联二极管EMCON 二极管双极性晶体管
文件：	总15页 (文件大小：372K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKW25N120T2

TrenchStop^®2^ndgeneration Series

Low Loss DuoPack : IGBT in 2^ndgeneration TrenchStop^®

with soft, fast recovery anti-parallel EmCon diode

•

Short circuit withstand time – 10µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

TrenchStop^®2^ndgeneration for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

Easy paralleling capability due to positive temperature coefficient

in V_CE(sat)

PG-TO-247-3

•

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,maxMarking Code

1.7V K25T1202

Package

IKW25N120T2 1200V 25A

Maximum Ratings

Parameter

PG-TO-247-3

175°C

Symbol

Value

Unit

Collector-emitter voltage

DC collector current (T_j=150°C)

T_C= 25°C

V_CE

I_C

1200

T_C= 110°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

100

V_CE≤ 1200V, T_j≤ 175°C

Diode forward current (T_j=150°C)

T_C= 25°C

T_C= 110°C

I_F

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

100

±20

Short circuit withstand time²⁾

µs

V_GE= 15V, V_CC≤ 600V, T_{j, start}≤ 175°C

Power dissipation

P_tot

349

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Wavesoldering only, temperature on leads only

T_j

T_stg

-40...+175

-55...+150

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJCD

R_thJA

0.43

0.81

K/W

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_(BR)CES

_GE=0V, I_C=500µA

1200

Collector-emitter saturation voltage

V_CE(sat)V_GE= 15V, I_C=25A

T_j=25°C

1.7

2.1

2.2

T_j=150°C

T_j=175°C

Diode forward voltage

V_F

V_GE=0V, I_F=25A

1.65

1.7

1.65

2.2

T_j=25°C

T_j=150°C

T_j=175°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_GE(th)

I_CES

I_C=1.0mA,V_CE=V_GE

5.2

5.8

6.4

_CE=1200V,

_GE=0V

T_j=25°C

T_j=150°C

T_j=175°C

0.4

4.0

200

Gate-emitter leakage current

Transconductance

I_GES

g_fs

_CE=0V,V_GE=20V

_CE=20V, I_C=25A

13.5

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

_CE=25V,

_GE=0V,

1600

155

f=1MHz

Q_Gate

_CC=960V, I_C=40A

_GE=15V

120

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_C(SC)

_GE=15V,t_SC≤10µs

V_CC= 600V,

150

115

T_{j, start}= 25°C

T_{j, start}= 175°C

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_ts

265

1.55

1.35

2.9

T_j=25°C,

_CC=600V,I_C=25A,

_GE=0/15V,

R_G=16.4Ω,

L_σ²⁾=105nH,

C_σ²⁾=39pF

Energy losses include

“tail” and diode

reverse recovery.

t_rr

Q_rr

195

2.05

µC

T_j=25°C,

V_R=600V, I_F=25A,

di_F/dt=1050A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

475

A/µs

recovery current during t_b

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

²⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_ts

T_j=175°C

_CC=600V,I_C=25A,

_GE=0/15V,

340

164

2.25

2.05

4.3

R_G= 16.4Ω,

L_σ¹⁾=175nH,

C_σ¹⁾=67pF

Energy losses include

“tail” and diode

reverse recovery.

t_rr

Q_rr

290

3.65

µC

T_j=175°C

V_R=600V, I_F=25A,

di_F/dt=1000A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

330

A/µs

recovery current during t_b

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

100A

10A

t_p=3µs

100A

80A

60A

40A

20A

T_C=80°C

T_C=110°C

10µs

50µs

150µs

500µs

I_c

20ms

0.1A

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25°C,

(T_j≤ 175°C, D = 0.5, V_CE= 600V,

T_j≤175°C;V_GE=15V)

V_GE= 0/+15V, R_G= 12Ω)

350W

300W

250W

200W

150W

100W

50W

50A

40A

30A

20A

10A

25°C

75°C

125°C

25°C

50°C

75°C

100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Maximum power dissipation as a

function of case temperature

(T_j≤ 175°C)

Figure 4. Maximum collector current as a

function of case temperature

(V_GE≥ 15V, T_j≤ 175°C)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

100A

80A

60A

40A

20A

100A

80A

60A

40A

20A

20V

V_GE=17V

20V

_GE=17V

15V

13V

11V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

80A

70A

60A

50A

40A

30A

3.5V

3.0V

2.5V

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=50A

I_C=25A

I_C=12.5A

I_C= 3A

20A

T_J=175°C

10A

25°C

10V 12V

0°C

50°C

100°C

150°C

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

t_d(off)

1000ns

100ns

10ns

1000 ns

100 ns

10 ns

t_d(off)

t_f

t_d(on)

t_r

10A

20A

30A

40A

5Ω 15Ω 25Ω 35Ω 45Ω 55Ω 65Ω 75Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J=175°C,

V_CE=600V, V_GE=0/15V, R_G=16.4Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=25A,

Dynamic test circuit in Figure E)

6.5V

6.0V

t_d(off)

max.

5.5V

5.0V

4.5V

4.0V

3.5V

typ.

100ns

t_f

min.

t_d(on)

t_r

10ns

0°C

50°C

100°C

150°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 1.0mA)

function of junction temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=25A, R_G=16.4Ω,

Dynamic test circuit in Figure E)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

7.5 mJ

5.0 mJ

2.5 mJ

0.0 mJ

E_ts*

10.0mJ

5.0mJ

0.0mJ

E_on*

E_off

10A

20A

30A

40A

5Ω 15Ω 25Ω 35Ω 45Ω 55Ω 65Ω 75Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=175°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=175°C,

V_CE=600V, V_GE=0/15V, R_G=16.4Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=25A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

4mJ

3mJ

2mJ

1mJ

0mJ

5.0mJ

E_on*

E_ts*

2.5mJ

E_off

E_on*

0.0mJ

400V

500V

600V

700V

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=25A, R_G=16.4Ω,

Dynamic test circuit in Figure E)

(inductive load, T_J=175°C,

V_GE=0/15V, I_C=25A, R_G=16.4Ω,

Dynamic test circuit in Figure E)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

C_iss

15V

10V

1nF

100pF

10pF

240V

960V

C_oss

C_rss

10V

20V

0nC

50nC

Q_GE, GATE CHARGE

100nC

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(I_C=25 A)

(V_GE=0V, f = 1 MHz)

15µs

10µs

5µs

200A

150A

100A

50A

0µs

12V

14V

16V

18V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J≤ 175°C)

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(V_CE≤ 600V, T_j,start= 175°C)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

V_CE

600V

400V

200V

600V

400V

200V

45A

30A

15A

45A

30A

15A

I_C

V_CE

I_C

0us

0.4us

0.8us

1.2us

0.4us

0.8us

1.2us

t, TIME

Figure 21. Typical turn on behavior

Figure 22. Typical turn off behavior

(V_GE=0/15V, R_G=16.4Ω, T_j= 175°C,

(V_GE=15/0V, R_G=16.4Ω, T_j= 175°C,

Dynamic test circuit in Figure E)

D=0.5

0.2

10^-1K/W

10^-2K/W

10^-3K/W

R , ( K / W )

0.198

τ , ( s )

3.31*10^-4

3.33*10^-3

1.68*10^-2

2.49*10^-1

0.1

10^-1K/W

0.301

0.1

R , ( K / W )

0.083

τ , ( s )

2.77*10^-4

3.21*10^-3

1.73*10^-2

2.77*10^-1

0.287

0.019

0.05

0.116

0.02

0.01

0.213

0.02

0.01

R₁

R₂

0.014

single pulse

R₁

R₂

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

10^-2K/W

C₁=τ₁/R₁C₂=τ₂/R₂

10µs

100µs

1ms

10ms

100ms

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

Figure 24. Diode transient thermal

(D = t_p/ T)

impedance as a function of pulse

width

(D=t_P/T)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

T_J=175°C

600ns

500ns

400ns

300ns

200ns

100ns

0ns

4µC

3µC

2µC

1µC

0µC

T_J=175°C

T_J=25°C

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

400A/µs

800A/µs 1200A/µs 1600A/µs 2000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(V_R=600V, I_F=25A,

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R=600V, I_F=25A,

Dynamic test circuit in Figure E)

T_J=25°C

T_J=175°C

35A

30A

25A

20A

15A

10A

-1200A/µs

T_J=25°C

-800A/µs

T_J=175°C

-400A/µs

-0A/µs

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=600V, I_F=25A,

Dynamic test circuit in Figure E)

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

100A

80A

60A

40A

20A

2.5V

2.0V

1.5V

1.0V

0.5V

0.0V

T_J=25°C

I_F=50A

175°C

25A

12.5A

0°C

50°C

100°C

150°C

V_F, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

PG-TO247-3

MIN

4.90

2.27

1.85

1.07

1.90

2.87

0.55

20.82

16.25

1.05

15.70

13.10

3.68

1.68

MAX

5.16

2.53

2.11

MIN

MAX

0.203

0.099

0.083

0.052

0.095

0.085

0.133

0.123

0.027

0.831

0.695

0.053

0.631

0.557

0.201

0.102

0.193

0.089

0.073

0.042

0.075

0.113

0.022

0.820

0.640

0.041

0.618

0.516

0.145

0.066

Z8B00003327

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.35

16.03

14.15

5.10

2.60

7.5mm

5.44

0.214

19.80

4.17

3.50

5.49

6.04

20.31

4.47

3.70

6.00

6.30

0.780

0.164

0.138

0.216

0.238

0.799

0.176

0.146

0.236

0.248

17-12-2007

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2

TrenchStop^®2^ndgeneration Series

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies

components may be used in life-support devices or systems only with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

Rev. 2.1 Sep 08

Power Semiconductors

IKW25N120T2 [INFINEON]

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