IKW30N60TA_技术文档

IKW30N60T

q

TRENCHSTOP™ Series

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

C

Features:



Very low V_CE(sat)1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for :

G

E

- Frequency Converters

- Uninterruptible Power Supply



TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

PG-TO247-3

- low V_CE(sat)



Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,max

1.5V

Marking

Package

IKW30N60T

600V

30A

K30T60

PG-TO247-3

175C

Maximum Ratings

Parameter

Symbol

Value

Unit

V_{C E}

600

Collector-emitter voltage, T_j≥ 25C

DC collector current, limited by T_jmax

T_C= 25C

V

60

30

I_C

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

I_{C p u l s}

-

90

A

Turn off safe operating area, V_CE= 600V, T_j= 175C, t_p= 1µs

Diode forward current, limited by T_jmax

T_C= 25C

60

30

I_F

T_C= 100C

Diode pulsed current, t_plimited by T_jmax

I_{F p u l s}

V_{G E}

90

Gate-emitter voltage

20

V

Short circuit withstand time²⁾

t_{S C}

5

s

W

V_GE= 15V, V_CC 400V, T_j 150C

Power dissipation T_C= 25C

P_{t o t}

T_j

187

Operating junction temperature

Storage temperature

-40...+175

-55...+150

260

T_{s t g}

-

C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

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Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

0.80

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJC D}

R_{t hJA}

K/W

1.05

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

40

Electrical Characteristic, at T_j= 25 C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR )C ES}V_{G E}=0V, I_C=0.2mA

600

-

V

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=30A

T_j=25C

-

1.5

1.9

2.05

-

T_j=175C

Diode forward voltage

V_F

V_{G E}=0V, I_F=30A

T_j=25C

-

1.65

1.6

2.05

-

T_j=175C

Gate-emitter threshold voltage

V_{G E( t h)}

I_{CE S}

I_C=0.43mA,

V_{C E}=V_{G E}

4.1

4.9

5.7

Zero gate voltage collector current

V_{C E}=600V,

V_{G E}=0V

µA

T_j=25C

-

40

2000

100

-

T_j=175C

-

Gate-emitter leakage current

Transconductance

I_{GE S}

g_fs

V_{C E}=0V,V_{G E}=20V

V_{C E}=20V, I_C=30A

-

16.7

-

nA

S

Integrated gate resistor

R_{G int}

Ω

Dynamic Characteristic

Input capacitance

C_{i ss}

V_{C E}=25V,

V_{G E}=0V,

f=1MHz

-

1630

108

50

-

pF

Output capacitance

Reverse transfer capacitance

Gate charge

C_{os s}

C_{rs s}

Q_{Gat e}

V_{C C}=480V, I_C=30A

V_{G E}=15V

167

nC

nH

A

Internal emitter inductance

L_E

-

13

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C( SC )}

275

V_{G E}=15V,t_SC5s

V_{C C}= 400V,

T_j= 150C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

Switching Characteristic, Inductive Load, at T_j=25 C

Value

Unit

Parameter

Symbol

Conditions

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=25C,

V_{C C}=400V,I_C=30A,

V_{G E}=0/15V,

t_{d( o n)}

t_r

t_{d( of f)}

t_f

-

23

21

-

ns

r_G=10.6,

Turn-off delay time

Fall time

254

46

L_=136nH,C_=39pF

L_, C_from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Turn-on energy

Turn-off energy

Total switching energy

E_{o n}

E_{o ff}

E_{t s}

0.69

0.77

1.46

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

-

143

0.92

16.3

603

-

ns

T_j=25C,

Diode reverse recovery charge

Q_rr

V_R=400V, I_F=30A,

di_F/dt=910A/s

µC

A

Diode peak reverse recovery current I_{rr m}

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

A/s

Switching Characteristic, Inductive Load, at T_j=175 C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=175C,

V_{C C}=400V,I_C=30A,

V_{G E}=0/15V,

t_{d( o n)}

t_r

t_{d( of f)}

t_f

-

24

26

-

ns

r_G=10.6,

Turn-off delay time

Fall time

292

90

L_=136nH,C_=39pF

L_, C_from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Turn-on energy

Turn-off energy

Total switching energy

E_{o n}

E_{o ff}

E_{t s}

1.0

1.1

2.1

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

-

225

2.39

22.3

310

-

ns

T_j=175C

Diode reverse recovery charge

Q_rr

V_R=400V, I_F=30A,

di_F/dt=910A/s

µC

A

Diode peak reverse recovery current I_{rr m}

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

A/s

3

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

100A

t_p=2µs

90A

80A

70A

60A

50A

40A

30A

20A

10A

0A

10µs

10A

T_C=80°C

50µs

T_C=110°C

1A

1ms

I_c

10ms

DC

I_c

0.1A

100Hz

1kHz

10kHz

100kHz

1V

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25C, T_j175C;

V_GE=0/15V)

(T_j 175C, D = 0.5, V_CE= 400V,

V_GE= 0/15V, r_G= 10)

50A

40A

30A

20A

10A

0A

160W

120W

80W

40W

0W

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j 175C)

(V_GE 15V, T_j 175C)

4

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

80A

70A

60A

50A

40A

30A

20A

10A

0A

50A

V_GE=20V

15V

40A

30A

20A

10A

0A

15V

13V

11V

9V

11V

9V

7V

0V

1V

2V

3V

0V

1V

2V

3V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

2.5V

50A

40A

30A

20A

I_C=60A

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=30A

I_C=15A

T_J=175°C

10A

25°C

0A

0°C

50°C

100°C

150°C

0V

2V

4V

6V

8V

V_GE, GATE-EMITTER VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

Figure 8. Typical collector-emitter

(V_CE=10V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

5

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

t_d(off)

t_f

100ns

10ns

1ns

t_f

t_d(on)

100ns

t_d(on)

t_r

10ns

0A

10A

20A

30A









I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J= 175°C,

V_CE= 400V, V_GE= 0/15V, r_G= 10Ω,

Dynamic test circuit in Figure E)

V_CE= 400V, V_GE= 0/15V, I_C= 30A,

Dynamic test circuit in Figure E)

7V

6V

t_d(off)

max.

typ.

5V

100ns

4V

3V

2V

1V

0V

min.

t_f

t_d(on)

t_r

10ns

25°C

50°C

75°C 100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V,

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.43mA)

V_GE= 0/15V, I_C= 30A, r_G=10Ω,

Dynamic test circuit in Figure E)

6

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

5.0mJ

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E_ts*

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E_off

E_on

*

E_on*

0A

10A

20A

30A

40A

50A











I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J= 175°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J= 175°C,

V_CE= 400V, V_GE= 0/15V, r_G= 10Ω,

Dynamic test circuit in Figure E)

V_CE= 400V, V_GE= 0/15V, I_C= 30A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

2.0mJ

due to diode recovery

3.0mJ

2.5mJ

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ

E_ts*

1.5mJ

1.0mJ

0.5mJ

0.0mJ

E_ts*

E_off

E_on*

E_on

*

300V 350V 400V 450V 500V 550V

25°C

50°C

75°C 100°C 125°C 150°C

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

temperature

(inductive load, V_CE= 400V,

V_GE= 0/15V, I_C= 30A, r_G= 10Ω,

Dynamic test circuit in Figure E)

(inductive load, T_J= 175°C,

V_GE= 0/15V, I_C= 30A, r_G= 10Ω,

Dynamic test circuit in Figure E)

7

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

C_iss

1nF

15V

10V

5V

120V

480V

C_oss

100pF

C_rss

0V

10V

20V

30V

40V

0nC 30nC 60nC 90nC 120nC 150nC 180nC

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(I_C=30 A)

(V_GE=0V, f = 1 MHz)

12µs

10µs

8µs

400A

300A

200A

100A

0A

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

V_GE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=400V, start at T_J=25°C,

T_Jmax<150°C)

(V_CE 400V, T_j 150C)

8

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

D=0.5

10⁰K/W

D=0.5

0.2

10^-1K/W

0.2

0.1

R , ( K / W )

0.29566

0.25779

0.19382

0.05279

 , ( s )  

6.478*10^-2

6.12*10^-3

4.679*10^-4

6.45*10^-5

R₂

R , ( K / W )

 , ( s )  

0.19517

0.26773

0.31252

0.22545

0.04916

1.079*10^-1

1.546*10^-2

2.297*10^-3

2.234*10^-4

7.5*10^-6

R₂

6

0.05

0.1

10^-1K/W

R₁

0.05

0.02

0.01

R₁

0.02

0.01

single pulse

10^-2K/W

C₁=₁/R₁C₂=₂/R₂

single pulse

C₁=₁/R₁C₂=₂/R₂

10^-2K/W

1µs 10µs 100µs 1ms 10ms 100ms

100ns 1µs 10µs 100µs 1ms 10ms100ms

t_P, PULSE WIDTH

Figure 21. IGBT transient thermal

impedance

Figure 22. Diode transient thermal

impedance as a function of pulse

(D = t_p/ T)

width

(D=t_P/T)

T_J=175°C

250ns

T_J=175°C

2.0µC

200ns

150ns

100ns

50ns

1.5µC

1.0µC

T_J=25°C

0.5µC

T_J=25°C

0.0µC

0ns

700A/µs

800A/µs

900A/µs 1000A/µs

700A/µs 800A/µs 900A/µs 1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(V_R=400V, I_F=30A,

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R= 400V, I_F= 30A,

Dynamic test circuit in Figure E)

9

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

T_J=175°C

T_J=25°C

-600A/µs

-450A/µs

-300A/µs

-150A/µs

20A

15A

10A

5A

T_J=25°C

T_J=175°C

0A/µs

0A

700A/µs

800A/µs

900A/µs 1000A/µs

700A/µs 800A/µs 900A/µs 1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=400V, I_F=30A,

(V_R= 400V, I_F= 30A,

Dynamic test circuit in Figure E)

70A

T_J=25°C

I_F=60A

2.0V

1.5V

1.0V

0.5V

0.0V

60A

50A

40A

30A

20A

10A

0A

175°C

30A

15A

0°C

50°C

100°C

150°C

0V

1V

2V

V_F, FORWARD VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

10

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

11

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

i,v

t

=t +t

S F

di /dt

r r

F

Q

=Q +Q

r r

S

F

t

r r

I

t

F

S

F

t

Q

10% I

r r m

Q

S

F

I

r r m

di /dt

V

r r

r r m

R

90% I

Figure C. Definition of diodes

switching characteristics

₁

₂

_n

r₁

r ₂

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

12

Rev. 2.5 20.09.2013

IFAG IPC TD VLS

IKW30N60T

q

TRENCHSTOP™ Series

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable

to assume that the health of the user or other persons may be endangered.

13

Rev. 2.5 20.09.2013

IFAG IPC TD VLS


型号：	IKW30N60TA
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 栅
文件：	总13页 (文件大小：569K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKW30N60TA [INFINEON]

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