IKW20N60T [INFINEON]
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode; IGBT的沟槽场终止和技术，柔软，快速恢复反并联EMCON何二极管
| 型号： | IKW20N60T |
| 厂家： | 
Infineon |
| 描述： | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
| 文件： | 总15页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
E
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
•
P-TO-247-3-1
(TO-220AC)
- low VCE(sat)
•
•
•
•
•
Positive temperature coefficient in VCE(sat)
Low EMI
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
175°C
175°C
Marking Code
K20T60
Package Ordering Code
TO-220 Q67040S4715
TO-263 Q67040S4713
TO-247 Q67040S4716
IKP20N60T
IKB20N60T
IKW20N60T
600V
600V
600V
20A
20A
20A
1.5V
K20T60
1.5V
K20T60
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
40
20
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
-
IF
60
60
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
40
20
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpuls
VGE
tSC
60
±20
5
V
Short circuit withstand time1)
µs
V
GE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Ptot
Tj
Tstg
-
166
W
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-40...+175
-55...+175
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
TO-220-3-1
TO-247-3-1
0.9
K/W
TO-263-3-2
Diode thermal resistance,
junction – case
RthJCD
TO-220-3-1
TO-247-3-1
1.5
TO-263-3-2
Thermal resistance,
junction – ambient
RthJA
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm² Cu)
62
40
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=20A
Tj=25°C
-
-
1.5
1.9
2.05
-
Tj=175°C
Diode forward voltage
VF
VGE=0V, IF=20A
-
-
1.65
1.6
2.05
-
Tj=25°C
Tj=175°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
IC=290µA,VCE=VGE
4.1
4.9
5.7
V
C E=600V,
µA
V
GE=0V
Tj=25°C
Tj=175°C
-
-
-
-
-
-
-
11
-
40
1000
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=20A
nA
S
Integrated gate resistor
RGint
Ω
2
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
IKW20N60T
TrenchStop Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
-
-
-
-
pF
1100
71
32
f=1MHz
V
V
TO-220-3-1
TO-247-3-1
TO-263-3-2
QGa te
CC=480V, IC=20A
GE=15V
120
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
-
7
-
-
Short circuit collector current1)
IC (SC)
183.3
A
V
GE=15V,tSC ≤5µs
VCC = 400V,
Tj ≤ 150°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
18
14
199
42
0.31
0.46
0.77
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=400V,IC=20A,
GE=0/15V,
RG=12 Ω,
Lσ 2)=131nH,
Cσ 2)=31pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
41
-
-
-
-
ns
µC
A
Tj=25°C,
VR=400V, IF=20A,
diF/dt=880A/µs
0.31
13.3
711
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
A/µs
recovery current during tb
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
18
18
223
76
0.51
0.64
1.15
-
-
-
-
-
-
-
ns
Tj=175°C,
V
V
CC=400V,IC=20A,
GE=0/15V,
RG= 12 Ω
Lσ 1)=131nH,
Cσ 1)=31pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
176
1.46
18.9
467
-
-
-
-
ns
µC
A
Tj=175°C
VR=400V, IF=20A,
diF/dt=880A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
A/µs
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
4
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
tp=2µs
60A
50A
40A
30A
20A
10A
0A
10µs
10A
1A
TC=80°C
TC=110°C
50µs
1ms
Ic
Ic
10ms
DC
0.1A
1V
10Hz
100Hz
1kHz
10kHz 100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE=15V)
V
GE = 0/+15V, RG = 12Ω)
160W
140W
120W
100W
80W
60W
40W
20W
0W
30A
25A
20A
15A
10A
5A
0A
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
5
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
50A
40A
30A
20A
10A
0A
50A
V
GE=20V
V
GE=20V
15V
40A
30A
20A
10A
0A
15V
13V
13V
11V
9V
11V
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
4V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
35A
30A
25A
20A
15A
2.5V
IC=40A
2.0V
1.5V
1.0V
0.5V
0.0V
IC=20A
IC=10A
10A
TJ=175°C
5A
0A
25°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=10V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
td(off)
td(off)
100ns
10ns
1ns
tf
tf
100ns
td(on)
td(on)
tr
tr
10ns
0A
5A 10A 15A 20A 25A 30A 35A
10Ω
20Ω
30Ω
40Ω
50Ω
60Ω
70Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 12ꢀ,
VCE= 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
5V
4V
3V
2V
1V
0V
td(off)
max.
typ.
100ns
min.
tf
td(on)
tr
10ns
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.29mA)
function of junction temperature
(inductive load, VCE = 400V,
V
GE = 0/15V, IC = 20A, RG=12ꢀ,
Dynamic test circuit in Figure E)
7
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
IKW20N60T
TrenchStop Series
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
2.4mJ
2.0mJ
1.6mJ
1.2mJ
0.8mJ
0.4mJ
0.0mJ
Ets*
2.4mJ
2.0mJ
1.6mJ
1.2mJ
0.8mJ
0.4mJ
0.0mJ
due to diode recovery
Ets*
Eoff
Eoff
Eon
*
Eon*
0A
5A 10A 15A 20A 25A 30A 35A
0Ω
15Ω
30Ω
45Ω
60Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 12ꢀ,
VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
2.0mJ
1.8mJ
1.6mJ
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
Ets*
due to diode recovery
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Ets*
Eoff
Eoff
Eon*
Eon
*
25°C 50°C
75°C 100°C 125°C 150°C
300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE = 400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 20A, RG = 12ꢀ,
VGE = 0/15V, IC = 20A, RG = 12ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
8
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
1nF
Ciss
15V
10V
5V
120V
480V
100pF
10pF
Coss
Crss
0V
0V
10V
20V
30V
40V
0nC
30nC
60nC
90nC
120nC
Q
GE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=20 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
300A
250A
200A
150A
100A
50A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
0A
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
T
Jmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
9
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
100K/W
D=0.5
D=0.5
0.2
0.2
0.1
R , ( K / W )
0.13483
0.58146
0.44456
0.33997
τ , ( s )
9.207*10-2
1.821*10-2
1.47*10-3
1.254*10-4
R2
10-1K/W
0.1
6
R , ( K / W )
0.18715
0.31990
0.30709
0.07041
τ , ( s )
6.925*10-2
1.085*10-2
6.791*10-4
9.59*10-5
R2
0.05
10-1K/W
R1
0.05
0.02
0.02
0.01
R1
C1=τ1/R1 C2=τ2/R2
0.01
10-2K/W
single pulse
C1=τ1/R1 C2=τ2/R2
single pulse
10-2K/W
1µs
1µs 10µs 100µs 1ms 10ms 100ms
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
Figure 22. Diode transient thermal
(D = tp / T)
impedance as a function of pulse
width
(D=tP/T)
1.8µC
1.6µC
1.4µC
1.2µC
1.0µC
0.8µC
0.6µC
0.4µC
0.2µC
TJ=175°C
TJ=25°C
250ns
200ns
150ns
TJ=175°C
100ns
50ns
TJ=25°C
0ns
600A/µs
900A/µs
1200A/µs
600A/µs
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=20A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
10
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
TJ=175°C
TJ=25°C
24A
20A
16A
12A
8A
-750A/µs
-600A/µs
-450A/µs
-300A/µs
-150A/µs
TJ=25°C
TJ=175°C
4A
0A/µs
0A
600A/µs
900A/µs
1200A/µs
600A/µs
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=20A,
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
TJ=25°C
IF=40A
50A
2.0V
1.5V
1.0V
0.5V
0.0V
175°C
40A
20A
10A
30A
20A
10A
0A
0°C
50°C
100°C
150°C
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
11
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.7
min
Max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1457
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
3.00
6.80
14.00
4.75
0.65
1.32
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
12
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
dimensions
TO-247AC
symbol
[mm]
[inch]
min
4.78
2.29
1.78
1.09
1.73
2.67
max
5.28
2.51
2.29
1.32
2.06
3.18
min
max
A
B
C
D
E
F
0.1882 0.2079
0.0902 0.0988
0.0701 0.0902
0.0429 0.0520
0.0681 0.0811
0.1051 0.1252
0.0299 max
G
H
K
L
0.76 max
20.80
21.16
16.15
5.72
0.8189 0.8331
0.6161 0.6358
0.2051 0.2252
0.7799 0.8142
0.1402 0.1941
0.1421
15.65
5.21
M
N
19.81
3.560
20.68
4.930
3.61
P
Q
6.12
6.22
0.2409 0.2449
13
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
14
Rev. 2.2 Dec-04
Power Semiconductors
IKP20N60T, IKB20N60T
IKW20N60T
TrenchStop Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
15
Rev. 2.2 Dec-04
Power Semiconductors
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