IKW25N120H3 [INFINEON]
IGBT HighSpeed 3;
| 型号： | IKW25N120H3 |
| 厂家： | 
Infineon |
| 描述： | IGBT HighSpeed 3 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总17页 (文件大小：1637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft fast recovery antiparallel diode
Features
• VCE = 1200 V
• IC = 25 A
• Very low VCE,sat
• Low EMI
• Very soft fast recovery antiparallel diode
• Maximum junction temperature Tvjmax = 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
G
C
E
Potential applications
• Uninterruptible power supplies
• Welding converters
• Converters with high switching frequency
Description
C
G
E
Type
Package
Marking
IKW25N120H3
PG-TO247-3
K25H1203
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
6
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
2
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
13.0
Unit
Internal emitter inductance
measured 5 mm (0.197 in)
from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque, M3 screw
Maximum of mounting
processes: 3
M
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
VCE
Parameter
Values
1200
50
Unit
Collector-emitter voltage
V
A
DC collector current, limited
by Tvjmax
IC
Tc = 25 °C
Tc = 100 °C
25
Pulsed collector current, tp
limited by Tvjmax
ICpuls
100
A
Turn-off safe operating area
Gate-emitter voltage
VCE ≤ 1200 V, Tvj ≤ 175 °C
100
20
A
V
VGE
tSC
Short circuit withstand time
VCC ≤ 600 V, Allowed number of short
circuits < 1000, Time between short circuits
≥ 1.0 s, Tvj = 175 °C
10
µs
Power dissipation
Ptot
Tc = 25 °C
326
156
W
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Collector-emitter breakdown VBRCES IC = 0.5 mA, VGE = 0 V
voltage
1200
V
Datasheet
3
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
2 IGBT
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 25.0 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
2.05
2.50
2.70
5.80
2.40
V
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.85 mA, VCE = VGE
VCE = 1200 V, VGE = 0 V
5.00
6.50
V
Zero gate voltage collector
current
Tvj = 25 °C
250
2500
600
µA
Tvj = 175 °C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE = 0 V, VGE = 20 V
IC = 25.0 A, VCE = 20 V
nA
S
13.0
87
Short circuit collector
current
ISC
VCC ≤ 600 V, VGE = 15 V, tSC ≤ 10 µs, Allowed
number of short circuits < 1000 , Time
between short circuits ≥ 1.0 s, Tvj = 175 °C
A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QG
VCE = 25 V, VGE = 0 V, f = 1000 kHz
VCE = 25 V, VGE = 0 V, f = 1000 kHz
VCE = 25 V, VGE = 0 V, f = 1000 kHz
IC = 25.0 A, VGE = 15 V, VCE = 960 V
1430
115
75
pF
pF
pF
nC
ns
115
27
Turn-on delay time
tdon
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
VGE = +0/+15 V,
RGon = 23.0 Ω,
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
Tvj = 175 °C,
IC = 25.0 A
26
σ
σ
Rise time (inductive load)
Turn-off delay time
tr
tdoff
tf
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
41
35
ns
ns
ns
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
277
347
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
Fall time (inductive load)
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
17
50
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
Datasheet
4
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
3 Diode
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
1.80
Unit
Turn-on energy
Eon
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
mJ
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
2.60
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
Turn-off energy
Eoff
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
0.85
1.70
mJ
mJ
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
Total switching energy
Ets
VCE = 600 V,
Tvj = 25 °C,
IC = 25.0 A
2.65
4.30
VGE = +0/+15 V,
RGon = 23.0 Ω,
Tvj = 175 °C,
IC = 25.0 A
RGoff = 23.0 Ω,
L = 80 nH, C = 67 pF
σ
σ
IGBT thermal resistance,
junction-case
Rthjc
Tvj
0.46 K/W
Operating junction
temperature
-40
175
°C
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
1200
V
Diode forward current,
limited by Tvjmax
IF
Tc = 25 °C
25
A
A
Tc = 100 °C
12.5
100
Diode pulsed current,
limited by Tvjmax
IFpuls
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Diode forward voltage
VF
IF = 12.5 A
Tvj = 25 °C
1.80
1.85
2.35
V
Tvj = 175 °C
Datasheet
5
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
3 Diode
Table 5
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Diode forward voltage
VF
IF = 25.0 A
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
2.40
2.60
2.60
3.05
V
Reverse leakage current
IR
VR = 1200 V
250
µA
ns
2500
Diode reverse recovery time
trr
Qrr
Irrm
VR = 600 V
VR = 600 V
VR = 600 V
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
290
505
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
Diode reverse recovery
charge
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
1.20
2.75
10.4
12.8
-150
-85
µC
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
Diode peak reverse recovery
current
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
A
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
Diode peak rate off fall of
reverse recovery current
dIrr/dt VR = 600 V
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
A/µs
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 500 A/µs
Diode thermal resistance,
junction-case
Rthjc
Tvj
1.49 K/W
175 °C
Operating junction
temperature
-40
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
6
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
4
Characteristics diagrams
Collector current as a function of switching frequency, Forward bias safe operating area, IGBT
IGBT
IC = f(f)
IC = f(VCE
)
D = 0 , Tvj ≤ 175 °C, VGE = 15 V, Tc = 25 °C
D = 0.5 , VCE = 600 V, Tvj ≤ 175 °C, VGE = 0/15 V, RG = 23 Ω
110
100
90
80
70
60
50
40
30
20
10
0
100
10
1
0.1
1
10
100
1000
1
10
100
1000
Power dissipation as a function of case temperature, Collector current as a function of case temperature,
IGBT
IGBT
Ptot = f(Tc)
IC = f(Tc)
Tvj ≤ 175 °C
VGE ≥ 15 V, Tvj ≤ 175 °C
350
300
250
200
150
100
50
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Datasheet
7
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
Typical output characteristic, IGBT
IC = f(VCE
Typical output characteristic, IGBT
IC = f(VCE
)
)
Tvj = 25 °C
Tvj = 175 °C
100
100
80
60
40
20
0
80
60
40
20
0
0
2
4
6
0
2
4
6
8
Typical transfer characteristic, IGBT
IC = f(VGE
VCE = 20 V
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
)
VGE = 15 V
75
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
60
45
30
15
0
0
25
50
75
100
125
150
175
5
10
15
Datasheet
8
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
Typical switching times as a function of collector
current, IGBT
VGEth = f(Tvj)
t = f(IC)
IC = 0.85 mA
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 23 Ω
7
6
5
4
3
2
1000
100
10
0
25
50
75
100
125
150
175
5
15
25
35
45
Typical switching times as a function of gate
resistance, IGBT
Typical switching times as a function of junction
temperature, IGBT
t = f(RG)
t = f(Tvj)
IC = 25.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 25.0 A, VCE = 600 V, VGE = 0/15 V, RG = 23 Ω
1000
100
10
1000
100
10
0
25
50
75
100
125
150
175
5
15
25
35
45
55
65
Datasheet
9
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
Typical switching energy losses as a function of
collector current, IGBT
Typical switching energy losses as a function of gate
resistance, IGBT
E = f(IC)
E = f(RG)
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 23 Ω
IC = 25.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
12
10
8
7
6
5
4
3
2
1
0
6
4
2
0
5
15
25
35
45
5
15
25
35
45
55
65
Typical switching energy losses as a function of
junction temperature, IGBT
Typical switching energy losses as a function of
collector emitter voltage, IGBT
E = f(Tvj)
E = f(VCE)
IC = 25.0 A, VCE = 600 V, VGE = 0/15 V, RG = 23 Ω
IC = 25.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 23 Ω
6
4
3
2
1
0
5
4
3
2
1
0
0
25
50
75
100
125
150
175
400
500
600
700
800
Datasheet
10
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
Typical gate charge, IGBT
Typical capacitance as a function of collector-emitter
voltage, IGBT
C = f(VCE
VGE = f(QGE
)
)
IC = 25.0 A
f = 1000 kHz, VGE = 0 V
16
14
12
10
8
1000
100
6
4
2
0
0
10
0
20
40
60
80
100
120
10
20
30
Typical short circuit collector current as a function of Short circuit withstand time as a function of gate-
gate-emitter voltage, IGBT emitter voltage, IGBT
IC(SC) = f(VGE tSC = f(VGE
)
)
VCE ≤ 600 V, Tvj, start = 25 °C
Tvj ≤ 175 °C, VCC ≤ 600 V
180
50
160
140
120
100
80
40
30
20
10
0
60
40
20
10
12
14
16
18
10
12
14
16
18
20
Datasheet
11
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
IGBT transient thermal impedance, IGBT
Zth = f(tp)
D = tp/T
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
D = tp/T
1
1
0.1
0.1
0.01
0.001
0.01
0.001
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage, Diode
junction temperature, Diode
IF = f(VF)
VF = f(Tvj)
120
100
80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
60
40
20
0
0
0
25
50
75
100
125
150
175
1
2
3
4
5
Datasheet
12
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
4 Characteristics diagrams
Typical reverse recovery time as a function of diode
current slope, Diode
trr = f(diF/dt)
Typical reverse recovery charge as a function of diode
current slope, Diode
Qrr = f(diF/dt)
VR = 600 V, IF = 25 A
VR = 600 V, IF = 25 A
700
600
500
400
300
200
3
2
1
0
200
400
600
800 1000 1200 1400 1600
200
600
1000
1400
1800
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode
Irr = f(diF/dt)
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 600 V, IF = 25 A
VR = 600 V, IF = 25 A
18
16
14
12
10
8
0
-100
-200
-300
-400
6
4
200
600
1000
1400
1800
200
600
1000
1400
1800
Datasheet
13
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 6
Datasheet
14
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t
rr = ta + tb
dIF/dt
Q
rr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
10% IC
90% IC
10% IC
Figure C. Definition of diode switching
t
characteristics
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
s
parasitic capacitor C ,
s
relief capacitor C ,
r
t2
t4
(only for ZVT switching)
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 7
Datasheet
15
Revision 1.00
2021-09-08
IKW25N120H3
High speed DuoPack: IGBT in Trench and Fieldstop technology
Revision history
Revision history
Document revision
Date of release Description of changes
V1.1
V1.2
V2.1
V2.2
1.00
2009-11-27
2010-02-10
2014-12-01
Final data sheet
Minor change figure 28
2021-09-08
Update of legend at the diagram VF = f(Tvj)
Datasheet
16
Revision 1.00
2021-09-08
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-09-08
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
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Document reference
IFX-AAK486-005
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