IDW30S120FKSA1 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3;


型号：	IDW30S120FKSA1
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3
文件：	总11页 (文件大小：749K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC

Silicon Carbide Diode

thinQ!^TMSiC Schottky Diode

1200V SiC Schottky Diode

I DW 3 0 S 1 2 0

Final Datasheet

Rev. 2.0,<2012-03-23>

Power Management & Multimarket

thinQ!™ SiC Schottky Diode

Description

IDW30S120

The 1200V family of Infineon SiC Schottky diodes has emerged over the

years as the industry standard and is now being extended with the

IDWxxS120 product family in the TO247 package.

The very good thermal characteristics of the TO247 in combination with the

low V_fof the 1200V diodes make it particularly suitable in power

applications where relatively high currents are demanded and utmost

efficiency is required. With the introduction of this package, Infineon now

offers a current capability of up to 30A in the 1200V range.

Features



Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behavior

No reverse recovery/ No forward recovery

Temperature independent switching behavior

High surge current capability

CASE

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹⁾for target applications

Optimized for high temperature operation

Benefits



System efficiency improvement over Si diodes

System cost / size savings due to reduced cooling requirements

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

Applications



SMPS e.g.; CCM PFC

Solar applications; UPS; Motor Drives

Table 1

Key Performance Parameters

Parameter

V_DC

Value (leg/device)

1200

Unit

Q_C@ V_R=400V

I_F@ T_c< 135°C

55/110

15/30

Table 2

Pin 1

Pin Definition

Pin 2

Pin 3

Type / ordering Code

Package

Marking

Related links

IDW30S120

PG-TO247-3

D30S120

www.infineon.com/sic

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Table of contents

Table of Contents

Description..........................................................................................................................................2

Maximum ratings................................................................................................................................4

Thermal characteristics.....................................................................................................................4

Electrical characteristics...................................................................................................................5

Electrical characteristics diagrams..................................................................................................6

Package outlines................................................................................................................................9

Revision History...............................................................................................................................10

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Maximum ratings

Table 3

Maximum ratings

Parameter

Symbol

I_F

Values (leg/device)

Unit

Note/Test Condition

Min.

Typ.

–

Max.

15/30

73/146

58/116

389/778

27/106

17/68

1200

Continuous forward current

–

T_C< 135°C, D=1

Surge non-repetitive forward current, I_F,SM

sine halfwave

–

T_C= 25°C, t_p=10 ms

T_C= 150°C, t_p=10 ms

T_C= 25°C, t_p=10 µs

T_C= 25°C, t_p=10 ms

T_C= 150°C, t_p=10 ms

–

Non-repetitive peak forward current I_F,max

–

i²t value

∫ i²dt

–

A²s

–

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Power dissipation

V_RRM

dv/dt

P_tot

–

V/ns

V_R=0..480 V

T_C= 25°C

150/300

175

–

Operating and storage temperature T_j;T_stg

-55

–

°C

Mounting torque

–

Ncm

M3 and M3.5 screws

Thermal characteristics

Table 4

Thermal characteristics TO-247-3

Parameter

Symbol

Values (leg/device)

Unit

Note/Test Condition

Min.

Typ.

Max.

1.0/0.5

Thermal resistance, junction-case

R_thJC

R_thJA

–

Thermal resistance, junction-

ambient

K/W

°C

leaded

260

Soldering temperature,

wavesoldering only allowed at leads

T_sold

–

1.6mm (0.063 in.) from

case for 10 s

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Electrical characteristics

Table 5

Static characteristics

Parameter

Symbol

Values (leg/device)

Unit

Note/Test Condition

Min.

Typ.

Max.

DC blocking voltage

Diode forward voltage

V_DC

V_F

I_R= 0.61 mA, T_j= 25°C

I_F= 30 A, T_j=25°C

1200

–

1.5

–

1.8

–

2.4

15/30

–

I_F= 30 A, T_j=150°C

V_R=1200 V, T_j=25°C

V_R=1200 V, T_j=150°C

305/610

Reverse current

I_R

µA

30/60

1500/3000

Table 6

AC characteristics

Parameter

Symbol

Values (leg/device)

Unit

Note/Test Condition

Min.

Typ.

Max.

Total capacitive charge

Total Capacitance

Q_c

V_R=400 V, di/dt=200A/µs,

I_F≤I_F,MAX, T_j=150°C.

55/110

–

V_R=1000 V, di/dt=200A/µs,

I_F≤I_F,MAX, T_j=150°C.

84/168

870/1740

75/150

–

V_R=1 V, f=1 MHz

V_R=300 V, f=1 MHz

V_R=600 V, f=1 MHz

60/120

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Electrical characteristics diagrams

Table 7

Power dissipation

Typical forward characteristics (per device)

300

250

200

150

100

100°C

perdevice

perleg

25°C

-55°C

150°C

175°C

100

125

150

175

0.5

1.5

2.5

3.5

4.5

T_C[°C]

V_F[V]

P_tot=f(T_C); R_thJC,max

I_F=f(V_F); t_p=200 µs; parameter: T_j

Table 8

Diode forward current (per leg)

Diode forward current (per device)

250

120

0.1

0.3

0.5

0.7

0.1

0.3

0.5

0.7

100

200

150

100

125

150

175

100

125

150

175

T_C[°C]

I_F=f(T_C); T_j≤175°C; R_thJC,max; parameter D=duty cycle I_F=f(T_C); T_j≤175°C; R_thJC,max; parameter D=duty cycle

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Electrical characteristics diagrams

Table 9

Typ. capacitance charge vs. current slope¹⁾

Typ. reverse current vs. reverse voltage

(per leg)

1.E-4

175°C

1.E-5

1.E-6

1.E-7

1.E-8

1.E-9

150°C

100°C

25°C

-55°C

1000 1200

200

400

600

800

100

300

500

700

900

V_R[V]

dI_F/dt [A/µs]

Q_C=f(di_F/dt); V_R=400V; T_j=150°C; I_F≤I_F,max; per device I_R=f(V_R); parameter: T_j; per device the values double

the values double

1) Only capacitive charge, guaranteed by design.

Table 10

Max. transient thermal impedance (per leg)

Max. transient thermal impedance (per device)

0.5

0.2

0.1

0.5

0.1

0.05

0.2

0.02

0.1

0.01

0.05

single pulse

0.02

0.01

single pulse

0.01

1.E-06

1.E-03

1.E+00

1.E-06

1.E-03

1.E+00

t_p[s]

Z_th,jc=f(t_P); parameter: D=t_P/T

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Electrical characteristics diagrams

Table 11

Typ. capacitance stored energy

Typ. capacitance vs. reverse voltage

(per leg)

1200

1000

800

600

400

200

0.1

100

1000

200

400

600

800

1000

1200

V_R[V]

E_C=f(V_R); per device the values double

C=f(V_R); T_j=25°C; f=1 MHz; per device the values

double

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Package outlines

Figure 1

Outlines TO-247, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2012-03-23

thinQ!^TMSiC Schottky Diode

IDW30S120

Revision History

thinQ!^TMSiC Schottky Diode

Revision History: 2012-03-23, Rev. 2.0

Previous Revision:

Revision

Subjects (major changes since last version)

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2012-03-23

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to

assume that the health of the user or other persons may be endangered.

Final Data Sheet

Rev. 2.0, 2012-03-23

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

IDW30S120FKSA1 [INFINEON]

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